TC5116 Search Results

TC511632

Abstract: TC511632FL
Contextual Info: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TCFT 1103

Abstract: TC5116400J A173 TC511640J A10RC TCWU
Contextual Info: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

BST60

Contextual Info: TOSHIBA TC5U6400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

TC5116400FT

Contextual Info: TOSHIBA TC5116400J/FT -60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5116400J/FT is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400J/FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

SK 3002

Contextual Info: TOSHIBA TC5116165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5116165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as

TC511665

Abstract: TC511665BZ TC511665BJ ZIP40 TC5116
Contextual Info: T C 5 1 1 6 6 5 B J /B Z - 8 0 . T C 5 1 1 T E N T A T IV E D A T A 6 5 ,5 3 6 W O R D x 16 B IT D Y N A M IC R A M D E SC R IP TIO N The TC511665BJ/BZ is the new generation dynamic KAM organized 65,536 words by 16 bits. _ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

TC5116160

Abstract: AI05a CFT50
Contextual Info: TOSHIBA TC5116160CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5116160CJ/CFT is a fast page dynamic RAM organized as 1,048,576 words by 16 bits. The TC5116160CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as advanced

tc5118165bj

Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Contextual Info: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: T EN TA TIV E D A TA 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTION The TC511665BJ/BZ is the new generation dynamic RAM organized 65,536 words by 16 bits. ^ The TC511665BJ/BZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

Contextual Info: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

BST60

Contextual Info: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both

Contextual Info: -60/70 8,388,608 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3680A0 is a 8,388,608 word by 36 bit dynamic RAM module which is assembled with 18 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high

A11RC

Contextual Info: TOSHIBA TC5116160AJ/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 16 bit. The TC5116160AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

TC511664

Contextual Info: I N T E G R A T E D CIRCUIT TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T C511664J / Z - 8 0 , TC511664J / Z -10 TECHNICAL DATA SILICON GATE CMOS 65,536 W O R D X 16 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice.

Contextual Info: 65,536 W O R D x 16 BIT D Y N A M IC RAM DESCRIPTIO N The TC511664J/Z is th e new generation dynam ic RAM organized 65,536 words by 16 bits. The TC51 1664J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced circuit tech n iq u es to provide wide operating m argins, both in te rn a lly and to the system user. M ultiplexed

CST A 200

Abstract: 5116405 TC5116405
Contextual Info: IN T EG R A T ED TOSHIBA T O S H I B A M O S D I G I T A L I N T E G R A T E D CIRCUI T TC5116405 CSJ /CST-40 TC5116405 CSJ / CST - 50 TC5116405 C S J/ C ST -60 CIRCUIT TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 4,194,304 WORD x4 BIT EDO HYPER PAGE DYNAMIC RAM

tc511664jl

Abstract: TC516
Contextual Info: TC51 6 5 ,5 3 6 W ORD X 16 BIT DYNAMIC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC511664JL/ZL is the new generation dynamic RAM organized 65,536 words by 16 bits. The TC511664JL/ZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit

thm3640

Contextual Info: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM3640A0 is a 4,194,304 word by 36 bit dynamic RAM module which is assembled with 9 TC5116400J devices on the printed circuit board. This module is optimized for applications which require high

csr bc4

Abstract: TC5116400BSJ BST60
Contextual Info: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

BST60

Contextual Info: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­