ze 003 ic

Abstract: c 1027 transistor 2SB1018A 2SD1411A PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A TV-2000
Contextual Info: T O S H IB A 2SB1018A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S B 1 018A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 • High Collector Current : Ic = —7 A J •

2SD1409A

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)

2SA1930

Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
Contextual Info: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o

2sC5200, 2SA1943

Abstract: 2SA1943 2sa1943 amplifier 2-21F1A 2SC5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor 2SC5200
Contextual Info: 2SA1943 TO SH IBA 2 S A 1 943 T O S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP TRIPLE DIFFUSED TYPE h , • • Complementary to 2SC5200 Recommended for 100 W High Fidelity Audio Frequency Amplifier Output Stage. 20.5MAX. » 7T M A X IM U M RATINGS Ta = 25°C

sn1027

Abstract: c 1027 transistor LT1798 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

lt 864

Abstract: LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290 REF-02 h8 diode zener
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

1027c5

Abstract: LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

LT1021-5

Abstract: LT1027 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5
Contextual Info: LT1027 Precision 5V Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1027 is a precision reference with extra-low drift, superior accuracy, excellent line and load regulation and low output impedance at high frequency. This device is intended for use in 12- to 16-bit A-to-D and D-to-A

c 1027 transistor

Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Contextual Info: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS

BD 130 Y transistor

Contextual Info: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.

KDS 8 MHZ cq crystal

Abstract: Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report
Contextual Info: RC288ACÌ Modem Designer’s Guide 1. INTRODUCTION 1.2. 1.1. SUMMARY • Data modem throughput up to 115.2 kbps - V.34, V.FC, V.32 bis, V.32, V.22 bis, V.22A/B, V.23. and V.21; Bell 212A and 103 - V.42 LAPM and MNP 2-4 error correction - V.42 bis and MNP 5 data compression

2N6193U3

Abstract: 2N5339 2N6193 MIL-PRF19500 JANTX 2n6193
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 3 April 2001 INCH-POUND MIL-PRF-19500/561D 3 January 2001 SUPERSEDING MIL-PRF-19500/561C 28 July 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

Y parameters of transistors

Abstract: SAMPLING PLAN
Contextual Info: Philips Semiconductors Product specification Microwave Transistors General BATCH RELEASE TESTS FOR GRADE “X” AND "Y” EQUIVALENTS Group B; note 1. INSPECTIONS MIL STD 750 METHOD CONDITIONS SAMPLING PLAN LTPD<2> SMALL LOT QUALITY CONFORMANCE INSPECTION

TRANSISTOR SMD MARKING CODE 451

Abstract: 2N6193 2N5339
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 June 2002. INCH-POUND MIL-PRF-19500/560E 6 March 2002 SUPERSEDING MIL-PRF-19500/560D 3 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

Contextual Info: Darlington Transistors D a rlin g to n P o w e r T r a n s is to r s Bipolar transistors T ype No. E IA J Absolute Maximum Ratings Electrical Characteristics VCBO VOEO V ebo lo Ib Pt Tstg Tj sus (min) [V ] [V ] [V ] [A ] [A ] [W ] [•c] [•c] [V ] 100

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

Contextual Info: SIEMENS BCR 505 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kü, R2=10kQ Marking Ordering Code Pin Configuration BCR 505 XWs Q62702-C2354 1= B Package LU It C\J Type 3=C

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

2N7575

Abstract: diode cc 3053 operation50 2N7576
Contextual Info: INCH-POUND MIL-PRF-19500/738 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments

2N7569

Contextual Info: INCH-POUND MIL-PRF-19500/734 16 February 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571 JAN, JANTX, JANTXV AND JANS. This specification is approved for use by all Departments

diode cc 3053

Abstract: JANTX 2N6341 BUT 509D 2N6338 2N6341 2N6437 2N6438 C-48U 509D cc 3053
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 9 January 2009. INCH-POUND MIL-PRF-19500/509D 9 October 2009 SUPERSEDING MIL-PRF-19500/509C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,

diode cc 3053

Abstract: 2N6341 C-48U 2N6338 MIL-PRF19500 3041 v cc 3053
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999. INCH-POUND MIL-PRF-19500/509C 25 July 1999 SUPERSEDING MIL-S-19500/509B 25 June 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER

2N3467

Abstract: 2N3467L 2N3468 2N3468L 2N3647 2N3648
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING