C 2026 Y TRANSISTOR Search Results

POLAR0.8

Abstract: Marking code mps RB400
Contextual Info: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage

smd KJD

Abstract: PEF2026 marking kjd PEB2026 ITB07375 ITD07385 ITP07376 ITP07377 ITS07379 ITS07386
Contextual Info: Infineon technologies ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 This Material Copyrighted By Its Respective Manufacturer PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96

LM 3041

Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Contextual Info: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.

transistor smd marking mx

Abstract: smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026
Contextual Info: SIEMENS PEB 2026 PEF 2026 Table of Contents Page 1 1.1 1.2 1.3 General D e s c rip tio n .3 F e a tu re s . 5

Y parameters of transistors

Abstract: SAMPLING PLAN
Contextual Info: Philips Semiconductors Product specification Microwave Transistors General BATCH RELEASE TESTS FOR GRADE “X” AND "Y” EQUIVALENTS Group B; note 1. INSPECTIONS MIL STD 750 METHOD CONDITIONS SAMPLING PLAN LTPD<2> SMALL LOT QUALITY CONFORMANCE INSPECTION

Contextual Info: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026

sot 89 D882

Abstract: h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p
Contextual Info: WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

Contextual Info: ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96 Page in previous Version Page (in current Version)

esm740

Abstract: ESM 740 CSB 503 TEA 2029 A transistor c 2026 7 pin SMPS ESM thyristor TEA2029A 3 phase smps circuit diagram c 2026 y transistor
Contextual Info: YISUSPtlDWlKlIN! electronic TEA 2026 CV «TEA 2029 CV Creative Technologies TIMING PROCESSOR LINE, FRAME, SMPS FOR TV SETS o Technology: I L Bipolar Features: o 500 kHz VCO and appropriate logic avoids adjustment of timing pulses o Low power dissipation by controlling

Contextual Info: WILLAS FM120-M MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline TRANSISTOR NPN Features FEATURES• Batch process design, excellent power dissipation offers

smd Schottky diode sod-123 marking code 220

Abstract: transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14
Contextual Info: WILLAS Low VF Chip Schottky Barrier Diodes BC856A/BWT1 BC857A/B/CWT1 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V General Purpose TransistorsPackage outline BC858A/B/CWT1 SL12-N THRU SL14-N Features • Batch process design, excellent power dissipation offers

PZTA93

Abstract: PZTA92 2B025 SMD IC 2025
Contextual Info: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.

Contextual Info: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"

2SA1238

Abstract: bc 147 B transistor transistor BC 147
Contextual Info: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features

Contextual Info: AVANTEK INC MME D m UMlUb GOOflmS s IAVA UTO/UTC 2026 Series Thln-Film Cascadable Am plifier 10 to 2000 MHz AVANTBK FEATURES APPLICATIONS « Frequency Range: 10 to 2000 MHz • High Output Power: +19.0 dBm Typ • Medium Gain: 15.0 dB(Tÿp) • Temperature Compensated

transistor k 208

Contextual Info: GENERAL PURPOSE INFORMATION 4. RELIABILITY TEST 4.1 A n E xam p le o f R e lia b ility Test fo r Signal Transistor Plastic M IN I M O L D Package E q u iv a le n t T e st M e th o d T e s t Ite m Test C o n d itio n J IS C 7021 M IL -S T D -2 0 2 M IL -S T D -7 5 0

b1181

Abstract: 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D
Contextual Info: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" NPN 201 oa 00[]4,i3,i T ~ 33- K Epitaxial Planar Silico n Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage

yg 2025

Abstract: TRANSISTOR C 2026 marking agv F1K marking
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D 7 T*=J7 D 7 ti D D D T E S H 4 T-29-25 N-Channel Junction Silicon FET 2026 Capacitor iVlicrophone Applications I3 9 3 A Features . Especially suited for use in audio, telephone capacitor microphones. . High lyfsj. . Excellent voltage characteristic.

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)

sj 2038

Abstract: sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

KL SN 102 94v-0

Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Contextual Info: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results

2sd823

Abstract: case outline
Contextual Info: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR 32 Volts POWER 225mW SOT-23 Unit：inch mm • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • / 

2SC693

Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Contextual Info: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0