C 735 TRANSISTOR Search Results

superscalar architecture of pentium processor

Abstract: INTEL 8086 Intel Pentium 60MHz Pentium 66 Intel 8086, Pentium 60 control unit of intel 8086
Contextual Info: PENTIUM PROCESSOR AT i c b l ^ ÌNDEX^t5VlÒ0 MHz PENTIUM PROCESSOR AT ¡COMP INDEX 735\90 MHz PENTIUM PROCESSOR AT iCOMP INDEX 610\75 MHz WITH VOLTAGE REDUCTION TECHNOLOGY Compatible with Large Software Base - MS-DOS*, Windows*, OS/2*, UNIX* 32-Bit CPU with 64-Bit Data Bus

PZTA93

Abstract: PZTA92 2B025 SMD IC 2025
Contextual Info: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.

2SC735

Abstract: 2sC735 transistor 2SC735 Y TRANSISTOR N 1380 600 300 SC 2SC735 0 0A45 2SA562 Produced by Perfect Crystal Device Technology TOSHIBA 2SC735 2SC735 O
Contextual Info: 2SC o 735 NPN EPITA XIA L TRANSISTOR P C T PROCESS t ä m m m m m O lÆ ü fiffl o ^ ' i ' y ^ - v r m o 5 / U D ^ N P N I t r 9 ^ 2/? J l/} B h 5 ^ ^ ( P C T B Ä ) ^ IL IC O N D riv e r S ta g e A m p lifie r, Power A m p lifier and Sw itching A p p lic a tio n s .

2SC735

Abstract: 2sC735 transistor 2SA562 2SA56 2SC735 0 2SA562 TOSHIBA TOSHIBA 2SC735 a-45J CMA120 Produced by Perfect Crystal Device Technology
Contextual Info: ^vnypNPxeyz^uBh^yvzviPCTm 2 s a 562 O o PNP 2SC 735 t ; V c E e a t) = - 0 .2 5 V (M ax .) => y y p / V 9 y Ki t 0 i t o Complementary to 2SC735 Mt'k'SL'fe MAXIMUM RATINGS CHARACTERISTIC X.IV9 (xa = 25 °C) SYMBOL HATING UNIT VCBO - 30 V * i i y 9 IH flS

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

2N5330

Abstract: SVT60-5 1N5410 2n4309 2NS330 SV050-12 cma 10012 SVT6062 to-5 package 2n5154 SV0300
Contextual Info: OPTEK T E C H N O L O G Y b T ^ Û SÛ O 0 0 0 1 4 2 5 051 MAE D INC OTK POWER SWITCHING TRANSISTORS Screened to equivalent per JANTX or JANTXV levels on request Case Style shown actual size TO-5/39 T O -5 9 T O -6 1 Is o la te d Is o la te d Discrete Power Switching Transistors

1N5410

Abstract: TO-59 Package 2n4305 2N5330 2N6583 2N6590 SVT200-5C SVT250-3C SVT250-5C SVT300-3C
Contextual Info: OPTEK TEC H NO LO GY INC MAE D • L^ÖSflO Q D O m H S 021 ■ OTK POWER SWITCHING TRANSISTORS Screened to equivalent per JANTX or JAN TXV levels on request Case Style shown actual size TO-5/39 TO -59 Isolated |f TO-61 Isolated Discrete Power Switching Transistors

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

Contextual Info: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2

2N5048

Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)

SF 829 B

Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Contextual Info: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)

Contextual Info: PRELIMINARY in te i PENTIUM PROCESSOR at ¡COMP™ INDEX 735\90 MHz PENTIUM™ PROCESSOR at iCOMP™ INDEX 815\100 MHz Compatible with Large Software Base - MS-DOS*, Windows*, OS/2*, UNIX* 32-Bit CPU with 64-Bit Data Bus Superscalar Architecture - Two Pipelined Integer Units Are

marking A6x

Abstract: 23 SOT-23 MARKING transistor a6c
Contextual Info: MMUN2111LT1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Tico 735

Abstract: 3 units 7-segment LED display module "strain gauge" Hengstler STRAIN GAUGE how to use STRAIN GAUGE switching transistor msd
Contextual Info: Operating Instructions tico 735 – Strain Gauge Introduction Your Hengstler tico 735 Strain Gauge is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters. Designed to provide instant visual feedback regarding an application’s key input value, the tico 735 not

Tico 735

Abstract: Tico 735-DC Process hengstler 735 tico 0735A 3 units 7-segment LED display module
Contextual Info: Operating Instructions tico 735 - DC Process Introduction Your Hengstler tico 735 DC Process is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters. Designed to provide instant visual feedback regarding an application’s key input value, the tico 735 not

Tico 735

Abstract: switching transistor msd hengstler 735 tico WIRING OF 12 VOLT RELAY LATCHING HOW TO AND MORE
Contextual Info: Operating Instructions tico 735 - Temperature Indicator Introduction Your Hengstler tico 735 Temperature Indicator is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters. Designed to provide instant visual feedback regarding an application’s key input value, the tico 735 not

Tico 735

Abstract: hengstler 735 tico transistor 735 Tico 735-DC Process
Contextual Info: Operating Instructions tico 735 – DC Volts/Amps Indicator Introduction Your Hengstler tico 735 for DC Volts and Amps is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters.

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

S178A

Abstract: VIDEO PULSE GENERATOR
Contextual Info: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i