C25 SMD Search Results

32N60BU1

Abstract: 32N60B h32n60b e5200 32N60BU
Contextual Info: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

G20N60

Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Contextual Info: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48

32N50

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

ixgk32n60

Contextual Info: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

diode SMD MARKING CODE JV

Abstract: NA MARKING SOT23 smd code marking sot23 marking code NA sot23 BBY40 Diode smd code cm marking 0K
Contextual Info: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS ¿ • Electronic tuning in VHF television tuners, band A up to 160 MHz.

BBY40

Contextual Info: Product specification Philips Semiconductors VHF variable capacitance diode BBY40 FEATURES • Excellent linearity • Small plastic SMD package • C25: 4.6 pF; ratio: 5.5. APPLICATIONS • Electronic tuning in VHF television tuners, band A up to 160 MHz.

BB1871

Abstract: BB187 marking code 4 SC-79
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 11 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners.

Contextual Info: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.75 pF; ratio: 12 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners. · Voltage controlled oscillators VCO .

Contextual Info: VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz

IXSX35N120AU1

Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Contextual Info: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C

50N60

Abstract: 50N6
Contextual Info: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2

E25 SMD diode

Contextual Info: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2

transistor 182B

Abstract: MARKING C SOD523 marking code 4 SC-79
Contextual Info: LESHAN RADIO COMPANY, LTD. VHF variable capacitance diode FEATURES • High linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C25: 2.8 pF; ratio: 17 · Low series resistance. APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C

ic tea 1090

Abstract: smd tea 521 27AD
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO

IXGH32N50B

Abstract: IXGH32N50BS
Contextual Info: Preliminary Data Sheet IXGH32N50B VCES IXGH32N50BS I C25 VCE sat tfi HiPerFASTTM IGBT = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BS) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 500 V

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600