CAPACITOR 1-35 L V6 Search Results

Contextual Info: XC6213 Series High Speed LDO Regulators, Low ESR Cap. Compatible, Ultra Small Package September 14, 2004 V6 Input Voltage Range Output Voltage Range Output Current 2.0 ~ 6.0V 1.2 ~ 5.0V 150mA APPLICATIONS Mobile phones Cordless phones, wireless communication equipment

Contextual Info: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C100-G1 date: 16.12.97 # P 1 1: Test values and units changed #P12: Test values and units changed #P16: Test values changed, wrong values in previous version

Contextual Info: TECHNOLOGY INC Tfi *1300347 0 0 0 1 7 3 ^ 7 ^ VLSI T e c h n o l o g y , in c . PRELIMINARY rT : V6:35 VT2KF9 2,064X9 FIFO MEMORY FE A T U R E S DESCRIPTION • FlraMn, flret-out dual-port memory The VT2KF9 Is a flrst-ln, flrst-out FIFO memory that uses a h igh *

NEOSId 2.2k

Abstract: NEOSID 22k
Contextual Info: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version

Contextual Info: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

ic tea 2025

Abstract: LM2972 63821 TEA 2025 equivalent C18 ph diode 7V1N DIODE C18 ph LM2672-5 lm297 LM2672-ADJ
Contextual Info: ' July 1997 LM2672 SIMPLE SWITCHER Power Converter High Efficiency 1A Step-Down Voltage Regulator with Features General Description The LM2672 series of regulators are monolithic Integrated circuits built with a LMDMOS process. These regulators pro­ vide all the active functions for a step-down buck switching

TGS 880

Contextual Info: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V644 2/4 -(60/70)(J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

Contextual Info: cP August 1996 Revision 2.0 FUJI' DATA SHEET - * EDC2U V6482- 60/70 (J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga­

PJ 976

Contextual Info: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V6482- 60/70 (J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga­

Contextual Info: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications

LM7805

Abstract: BCP56 PTFA192401E PTFA192401F RF35 RO4350
Contextual Info: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications

a2324

Abstract: PTFA192401E PTFA192401F RF35 RO4350 BCP56 LM7805 PTFA192401F V4
Contextual Info: PTFA192401E PTFA192401F Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching,

Contextual Info: PTFA192401E PTFA192401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications

Contextual Info: TO SHIBA TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 717 A N mm m a • m m m. ■ v g SILICON MONOLITHIC T A 1 717 AF mm m a ■ m m m. ■ TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : • Four sound processor circuit channels

Contextual Info: TOSHIBA TA1217AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT Tm m A 1• 9 m SILICON MONOLITHIC mA mMm 1■ 7m TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : ^ i j u i j l /u i iu v ii v u it v . i i a i 11 i 13 Sound processor circuit for left channel of stereo

7909 regulator

Abstract: PTFA092213ELV4
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

evox rifa PEG 122

Abstract: BHC ALS capacitor Evox Rifa PEH169 Rifa PEG 124 RIFA PEG 123 Rifa PEH 165 bhc capacitor als31 Rifa PEH169 EVOX RIFA CAPACITORS PEH200 BS5267
Contextual Info: Quality Policy KEMET exceeds customer expectations through operational excellence and continuous improvement. • • • • • • Zero Defects 100% On-Time Delivery Technology Leader Lowest Total Cost of Ownership Six Sigma Process Capability World-Class Cycle Time Efficiencies

PTFA092213EL

Abstract: LM7805 resistor 51k transistor c331 BCP56 R250 RO4350
Contextual Info: PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier

Contextual Info: TA1217AN T O SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT Tm mA m 1• 7 SILICON MONOLITHIC 1■ 7m mA m N■ v TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : • Four sound processor circuit channels Sound processor circuit for left channel of stereo

woofer

Abstract: woofer circuit diagram bass line circuit woofer circuit diagram TA1217AF TA1217AN 5.1 woofer
Contextual Info: TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1217AN,TA1217AF TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : l Four sound processor circuit channels Sound processor circuit for left channel of stereo Sound processor circuit for right channel of stereo

2.1 woofer circuit diagram

Abstract: woofer circuit diagram bass line circuit bass treble control circuit for woofer SUB WOOFER LOWPASS FILTER CIRCUIT woofer circuit diagram 5.1 woofer sound ic WOOFER TA1217AN
Contextual Info: TA1217AN/AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1217AN,TA1217AF TV-SOUND PROCESSOR TA1217AN incorporates the following circuits : Four sound processor circuit channels Sound processor circuit for left channel of stereo Sound processor circuit for right channel of stereo

CXA2194Q

Contextual Info: CXA2194Q US Audio Multiplexing Decoder Description The CXA2194Q is an IC designed as a decoder for the Zenith TV Multi-channel System and also corresponds with I2C bus. Functions include stereo demodulation, SAP Separate Audio Program demodulation, dbx noise reduction and sound

elna capacitor 22uf

Contextual Info: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the