HDSP7301
Abstract: HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige
Text: SI EM EN S 4?E m fl23SbD5 0027011 4 «SIEG SIEMENS AKTIENGESELLSCHAF "P-41-33 Sieben-Segment-Anzeige Seven Segment Display 7,6 mm 0.3” HDSP-7301 Besondere Merkmale • Hohe Lichtstärke • Gehäuse ist optimiert fur den Einsatz bei starkem Fremdlicht
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fl23SbD5
P-41-33
HDSP-7301
235b05
623SbOS
HDSP7301
HDSP-7301
7 segment led display SIEMENS
Siebensegmentanzeige
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optocoupler CNY17 F-2
Abstract: CNY17 CNY17F CNY17G optocoupler no base connection siemens CNY17 F-3X Diode r4f
Text: SIEMENS AKTIENGESELLSCHAF SIEM EN S i+7E D • fl23SbD5 O D S ? n D M «SIEG CNY17FSERIES VDE LEAD BEND CNY17G F SERIES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER NO BASE CONNECTION P a c k a g e D im e n s io n s in In c h e s m m CNY17F 307 (7 f t .014(035)
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fl23SbD5
CNY17F
CNY17G
CATH00E
CNY17F/G
optocoupler CNY17 F-2
CNY17
optocoupler no base connection
siemens CNY17
F-3X
Diode r4f
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF SIEM ENS ^7E D • fl23SbD5 O D S ? n D M «SIEG CNY17FSERIES VDE LEAD BEND CNY17G F SERIES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER NO BASE CONNECTION Packaae Dimensions in Inches mm .256(6.5) " .246(6.3) «— - o FEATURES • CNY17F G Lead Bend in Accordance
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fl23SbD5
CNY17FSERIES
CNY17G
CNY17F
CNY17F/G
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BSM200GA100D
Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes
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fl23SbD5
BSM200GA100D
GA100D
C67076-A2001-A2
SII00253
SII00254
BSM200GA100D
bsm200ga100
siemens igbt BSM 200 GA 120
siemens igbt BSM 300 ga 120
siemens igbt BSM 200 GA 100
stt25
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PLCC-68 8051 siemens
Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Text: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
8235b05
MQFP-80
0H35b05
PLCC-68 8051 siemens
80C32
smd marking b4h
smd marking code fj FET
80C535
80c535-n
ma A235
sab-80535
SMD MARKING CODE E2H
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Untitled
Abstract: No abstract text available
Text: • ñ 2 3 S bO S 0Dñl45fl 0«ïb SIEMENS PROFET BTS426L1 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output V b b -i/o u T A v a la n c h e C la m p
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l45fl
BTS426L1
fl235b05
A235Lj05
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Untitled
Abstract: No abstract text available
Text: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12
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S879-B200-V1
fl23SbD5
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c535
Abstract: 80C535 80c515 poe cci 1033 siemens 80C535 microcontroller 80c535-n sab-80535 80C51 sab80c51 B158-H6579-X-X-7600
Text: SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
0235bD5
L1D30
023SbOS
c535
80C535
poe cci 1033
siemens 80C535 microcontroller
80c535-n
sab-80535
80C51
sab80c51
B158-H6579-X-X-7600
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KDS 7c
Abstract: 4900 SIEMENS siemens EC 230 98 BSM651F
Text: H7E D • Ö235bü5 DDSb533 3 « S I E G SIEMENS AKTIENGESELLSCHAF T -Z 5 -0 1 SI MOP AC" Module V ds =500 V Id = 6 x 9 A BSM 651 F R DS on = 0.7 Q • • • • • • • Power module 3-phase full-bridge FREDFET N channel Enhancement mode Package with insulated metal base plate
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DDSbS33
T-25-01
C67076-A1500-A2
bsm651f
A235bD5
KDS 7c
4900 SIEMENS
siemens EC 230 98
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B85111-A-B33
Abstract: B85111-A-B14 B85111-A-B16
Text: B85111-A-B Feed-Through Capacitors Rated voltage Y capacitors with external thread M 12 x 0,75 Rated current 440 V 250 V~ 16 A Coaxial feed-through capacitors as per V D E 0565-1. Clearance and creepage distance: > 4 mm. Dim ensions in mm Type /l - 3 /2 - 1 .5
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B85111-A-B
B85111-A-B1
B85111-A-B2
0Q7533Ã
B85111-A-B13
B85111-A-B14
B85111-A-B17
B85111-A-B15
B85111-A-B16
B85111-A-B33
B85111-A-B14
B85111-A-B16
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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Untitled
Abstract: No abstract text available
Text: SIEMENS Hyper 3 mm T1 LED, Diffused Hyper-Bright, Wide-Angle LED LS 3386, LA 3386, LO 3386 LY 3386 Besondere Merkmale • • • • • • eingefärbtes, diffuses Gehäuse zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lötspieße mit Aufsetzebene
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fl23SbD5
fl235b05
235bOS
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SMD Transistor t30
Abstract: transistor SMD t30
Text: SPP 30N03L Infineon technologie» SIPMOS Power Transistor Product Summary Features V 30 Drain source voltage '/ ds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.018 n 30 A h • N channel • Logic Level
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30N03L
SPP30N03L
P-T0220-3-1
Q67040-S4737-A2
P-T0263-3-2
Q67040-S4143-A3
SPB30N03L
S35bQ5
Q133777
SQT-89
SMD Transistor t30
transistor SMD t30
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Untitled
Abstract: No abstract text available
Text: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be
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64-bit/s
128-kbit/s
IA-BIDfCl80x
1A-BID180x
0235b05
54CC2
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B32591C1104
Abstract: No abstract text available
Text: B 32 590 . B 32 594 Metallized Polyester Film Capacitors MKT Coated (Powder Dipped) Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology for lead spacing 7,5 . 15 mm (100 . 400 Vdc);
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A235b05
0D7MA33
Vdc/160
fl23SbOS
flS35fc
007HB35
Vdc/16
6S35bD
B32591C1104
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Untitled
Abstract: No abstract text available
Text: 47E » SIEMENS • Ô B 3 5 b 0 5 QQBMTMfi b ■ SIEG S I E M EN S A K T I E N G E S E L L S C H A F T 6-Bit A/D Converter, 300 MHz SDA 8200 Bipolar 1C Features • • • • • • • • • ^ t - io - c a 300 MHz strobe frequency 5.4 effective bits fanaiog = 100 MHz
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Q67000-A8164
C-DIP-40
fi23SbDS
fl23SbOS
SDA8200
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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SAB-C501
Abstract: No abstract text available
Text: SIEMENS 8-Bit CMOS Microcontroller SAB-C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/20/40 MHz operating frequency 8 K x 8 ROM SAB-C501 -1R only 256 x 8 RAM Four 8-bit ports
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SAB-C501
SAB-C501
16-bit
P-DIP-40
P-LCC-44
SAF-C501
CA01762
SAB-C501-L/C501
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Untitled
Abstract: No abstract text available
Text: H Ô235b05 O O ñ l b l 4 b2 b SIEMENS PROFET BTS 432 F2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1 80 VLoad dump Clamp of negative voltage at output Msb-Vo u t Avalanche Clamp
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235b05
fl23SbD5
O-220AB/5
O-22QAB/5,
E3043
E3043
Q67060-S6203-A2
Q67060-S6203-A4
CPT053J6
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siemens mov all range
Abstract: intel 80c535 n
Text: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM
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023SbDS
80C515/80C535
80C515
80C515-16
80CS35
80C535-16
80C515-T40/110,
80C535-T40/110
80C515-T40/85,
80C53S-T40/85
siemens mov all range
intel 80c535 n
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neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page
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10kHz
13kHz
2x10kHz-19kHz
3x13kHz-38kHz
57kHz
V66047-S695-G100-G1
fl235b05
D137bbfl
neosid v6
OV56
AM2 Siemens
neosid v7
V55D
neosid CAP
neosid 3.3
NEOSID
nr. 9181
Diode LT 330D
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bd437 siemens
Abstract: transistor d437 D437 transistor bd 439
Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase
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QQQ43b3
fi235b05
BD433
BD439
BD441
BD437.
BD433.
BD433,
BD435,
bd437 siemens
transistor d437
D437 transistor
bd 439
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Untitled
Abstract: No abstract text available
Text: B 41 564, B 41 584 B 43 564, B 43 584 Capacitors with Screw Term inals L L Grade For professional current converter technology Voltage ratings up to 500 Vdc Construction • Charge-discharge proof, polar • Aluminum case with insulating sleeve • Poles with screw terminal connections
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KAL0272-T
fl23SbD5
106Hz
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SIEMENS 3 TB 40 12 - 0B
Abstract: TLE4285G
Text: SIEMENS • 8235b05 Low-Drop Voltage Regulator D D Tb?!! 252 TLE 4285G Target Data Sheet 1 Overview 1.1 • • • • • • • • Features Wide operation range: 6 V to 45 V Wide temperature range: - 40 °C to 150 °C Low quiescent current consumption: 80 nA
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8235b05
4285G
4285G
A23SbG5
AED02192
TLE4285G
SIEMENS 3 TB 40 12 - 0B
TLE4285G
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