CF003 Search Results

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

RSY-5

Abstract: CF005-01 celeritek CF003-01 CF010-01 celeritek ghz a32g 3620q
Contextual Info: Broadband Power GaAs MESFET Chips □ PjdB P°wer: A CF003-01: +22 dBm CF005-01: +25 dBm CF010-01: +28 dBm □ High Gain @ 12 GHz : CF003-01: 9.0 dB CF005-01: 8.5 dB CF010-01: 8.0 dB “ A A □ Broadband: Usable to 18 GHz □ Wafer Qualification Procedure

CF005-01

Abstract: 117450 CF003-01 CF010-01 a32g
Contextual Info: Broadband Power GaAs Chips Specifications T^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted A c tiv e Layer Symbol G|_ p1dB Frequency (GHz) Units Linear Power Gain V q s = 6-0 V, iQg = 80 mA V q s = 6-0 Iqq = 160 mA V q s = 6.0 V, Iq 5 = 300 mA

RG58CU

Abstract: CBBR0441
Contextual Info: RG58CU 50 Ohm Coaxial Cables Type Coaxial cable RG-58C/U Code CF0032N/BK Description 19/0.19TC +16/7/0.12mm TC (Braid) Φ5.0mm Conductor 19/0.19 ±0.003mm TC Stranding Direction : Right / Maximum distance 40mm / Nominal outer diameter 0.96mm PE Dielectric

Contextual Info: Broadband Power GaAs Chips Specifications T ^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted Active Layer Frequency (GHz) Units Linear Power Gain Vqs = 6.0 V, Iq 3 = 80 mA Vqs = 6-0 V, Iqs = 160 mA VDS = 6.0 V, lDS = 300 mA

CFA0301-A

Abstract: CF003-01 CFB0301-B CFB0301
Contextual Info: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon

CF003

Abstract: hemt
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF003 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

Contextual Info: CF003 Series g„a @p™ˆ›‡•“•˜–‹Œ†@hemt@„”‡@mesfet@c‹Œ–™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

CF003

Abstract: CF003-01 CF003-02 CF003-03 CFC003
Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PjdB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

CFC003

Abstract: celeritek CF003 CF003-01 CF003-02 CF003-03 MS03 celeritek ghz
Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PldB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips J Low Noise Figure: 1.0 dB at 12 GHz Zi High Gain: l Od Ba t 12 GHz J P jdB P °wer: +-2 dBm at 12 GHz J Wide Dynamic Range J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted J Wafer Qualification Procedure

c200h-OC226N

Abstract: CS1D-PA207R omron oc222 omron oc225 english omron OD231 yaskawa servo driver omron oc225 OMRON BF 302 C200H-AD002 OMRON Operation Manual Rotary Encoder OS 104 mitsubishi
Contextual Info: Y201-EN2-03.book Seite 247 Donnerstag, 30. März 2006 1:52 13 Programmable Controllers Rack PLCs CS1 Series Introduction Lineup CPU Units Power Supplies Basic System Configuration Duplex System Configuration Programming Dimensions I/O allocations Current consumption

TRANSISTOR BD 137-10

Contextual Info: CFS0303-SB Advanced Product Information March 2004 V1.3 1 of 16 Features ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) ❏ High Dynamic Range ❏ Low Current and Voltage. ❏ Bias Point 3V and 60 mA ❏ 0.3 dB noise figure at 2 GHz

h3ba omron timer

Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
Contextual Info: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator

Contextual Info: 10 October 2012 Specification for monolithic crystal filter: MQF 21.4-2500 /07 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

Contextual Info: 21 March 2006 Specification for monolithic crystal filter MQF 70.0-0800/08 1. General 1.1. Case: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-0800/08 6, 3 rd overtone -40°C to +80°C -55°C to +90°C

15165

Abstract: TRANSISTOR BD 137-10 CF003-03 CFS0303-SB CFS0303-SB-0G00 CFS0303-SB-0G0T PB-CFS0303-SB-00A0 PB-CFS0303-SB-00B0 PB-CFS0303-SB-00C0 2304 sot 353
Contextual Info: 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package September 2007 - Rev 28-Sep-07 CFS0303-SB Features AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Dynamic Range Low Current and Voltage Bias Point 3V and 60 mA

PF412

Abstract: SVM9300 PF446 PF245 PF382 PF833 PF336 PF556 PF544 SED9420C
Contextual Info: SP -1 1 ASSP Documentation Graphics ICs LCD drivers Data sheet Part number D atasheet Manual Part number English Japanese English SEA6472F0A PF785 MF6S0 MF681 S P C 8O IIF 0A PF767 S P C 8O3OF0A PF768 S PC8104F PF765 Japanese MF802 MF801 MF891 Engfeh S E D 1 100 series

Contextual Info: 24 January 2008 Specification for monolithic crystal filter: MQF 10.7-2500 /10 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 10 October 2012 Specification for monolithic crystal filter: MQF 21.4-2500 /07 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 21 March 2006 Specification for monolithic crystal filter MQF 70.0-0800/08 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-0800/08 6 -40°C to +80°C -55°C to +90°C