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MACOM CGH25120F RF MOSFET HEMT 28V 440162
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH25120F	Tray	25		1	1 $762.15 10 $647.384 100 $647.384 1000 $647.384 10000 $647.384	Buy Now
Mouser Electronics	CGH25120F					1 - 10 $639.38 100 $639.38 1000 $639.38 10000 $639.38	Get Quote
Richardson RFPD	CGH25120F				1	1 $821.32 10 $821.32 100 $821.32 1000 $821.32 10000 $821.32	Buy Now
MACOM CGH25120F-AMP AMPLIFIER, 2.3-2.7GHZ, CGH25120F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH25120F-AMP	Bulk			1	1 $964.71 10 $964.71 100 $964.71 1000 $964.71 10000 $964.71	Buy Now

CGH2512 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CGH25120F		Wolfspeed	120W GAN HEMT 28V 2.5-2.7GHZ FET		Original	PDF
CGH25120F		Wolfspeed	120W GAN HEMT 28V 2.5-2.7GHZ FET		Original	PDF

CGH2512 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CGH25120F Abstract: J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22 Text: PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22
Untitled Abstract: No abstract text available Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 CGH25120F-Tpplications
Untitled Abstract: No abstract text available Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512
RF Transistor s-parameter Abstract: j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Text: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	PDF	CGH25120F CGH25120F CGH2512 CGH25120F-Tfor RF Transistor s-parameter j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
ofdm predistortion Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor Text: May 2009 Short range wireless UWB GPS and satellite GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based	Original	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	PDF	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F