CHA30 Search Results

CHA3092

Contextual Info: CHA3092 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

CHA3093a

Abstract: CHA3093a99F/00
Contextual Info: CHA3093a 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.

Contextual Info: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: CHA3092 RoHS COMPLIANT 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

AN0005

Abstract: CHA3092RBF RO4003
Contextual Info: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

Contextual Info: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.

CHA3023

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 1-18GHZ
Contextual Info: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes

Contextual Info: CHA3010 8-12 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA3010 is a three-stage monolithic gain controlled amplifier. The circuit is manufactured with a MESFET process: 0.5µm gate length, via holes through the substrate, air bridges and

CHA3092

Contextual Info: CHA3092 RoHS COMPLIANT 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

CHA3023

Abstract: MS11 MS12 MS21 MS22 PS11 PS12 PS22 1-18GHZ
Contextual Info: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes

CHA3092

Contextual Info: CHA3092 RoHS COMPLIANT 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3092 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

Contextual Info: CHA3080-98F 71-76GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Broadband performances: 71-76GHz 16dB linear gain 19dBm power at 1dB compression 20dB power detector dynamic range BCB layer protection DC bias: Vd=3.5V@Id=280mA Chip size 3.96x1.78x0.07mm

Contextual Info: CHA3090-98F 81-86GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description Broadband performances: 81-86GHz 13dB linear gain 17dBm power at 1dB compression 20dB power detector dynamic range BCB layer protection DC bias: Vd=3.5V@Id=280mA Chip size 3.36x1.78x0.07mm

Contextual Info: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

CHA3063

Contextual Info: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.

AN0005

Abstract: CHA3092 CHA3092RBF
Contextual Info: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

Contextual Info: CHA3023 RoHS COMPLIANT 1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes

63826

Abstract: 52887 52854 17-311-1 150651
Contextual Info: CHA3093c 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

CHA3063

Contextual Info: CHA3063 RoHS COMPLIANT 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounded.This helps to simplify the assembly process.

Triangle Microwave

Abstract: RO4003 AN0005 CHA3092RBF
Contextual Info: CHA3092RBF 20-33GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications,

Contextual Info: CHA3093c RoHS COMPLIANT 20-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3093c is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

CHA3063

Contextual Info: CHA3063 5.5-23GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA3063 is a two-stage general purpose monolithic medium power amplifier.The backside of the chip is both RF and DC grounds.This helps simplify the assembly process. The circuit is manufactured with a PMHEMT process : 0.25µm gate length, via

Contextual Info: ^ a m m a m mm m m ^ a m m r a m m mm am Semiconductor Corporation C S5505 C S5506 C S5507 C S5508 Very Low Power, 16-Bit and 20-Bit A/D Converters Features General Description • Very Low Power Consumption Single supply +5V operation: 1.5 mW Dual supply +5V operation: 3.0 mW