CL-CK L10 Search Results

Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 4Gb A-die HMT451R7AFR8A HMT41GR7AFR8A HMT41GR7AFR4A HMT42GR7AFR4A HMT84GR7AMR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /Sep. 2013 1

Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb E-die HMT325R7EFR8A HMT351R7EFR8A HMT351R7EFR4A HMT31GR7EFR8A HMT31GR7EFR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /Aug. 2013 1

HMT42GR7AFR4A

Abstract: HMT41GR7AFR4A ac130
Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 4Gb A-die HMT451R7AFR8A HMT41GR7AFR8A HMT41GR7AFR4A HMT42GR7AFR4A HMT84GR7AMR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 /Jul. 2012 1

Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 4Gb B-die HMT451R7BFR8A HMT41GR7BFR8A HMT41GR7BFR4A HMT42GR7BFR4A HMT84GR7BMR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /May. 2014 1

Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 4Gb A-die HMT451R7AFR8A HMT41GR7AFR8A HMT41GR7AFR4A HMT42GR7AFR4A HMT84GR7AMR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /Sep. 2013 1

Contextual Info: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb A-die HMT425S6AFR6A HMT451S6AFR6A HMT451S6AFR8A HMT41GS6AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.2 / Apr. 2014 1 Revision History Revision No.

Contextual Info: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb A-die HMT425S6AFR6A HMT451S6AFR6A HMT451S6AFR8A HMT41GS6AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.1 / Aug. 2013 1 Revision History Revision No.

H5TC2G83EFR

Contextual Info: 240pin DDR3L SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb E-die HMT325R7EFR8A HMT351R7EFR8A HMT351R7EFR4A HMT31GR7EFR8A HMT31GR7EFR4A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.2 /Nov. 2012 1

Contextual Info: 204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb B-die HMT451S6BFR8A HMT41GS6BFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 / Nov. 2013 1 Revision History Revision No. History Draft Date

Contextual Info: 244pin DDR3L SDRAM ULP Mini UDIMM DDR3L SDRAM Unbuffered ULP Mini-DIMMs Based on 4Gb A-Die HMT451M7AFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Oct. 2012 1 Revision History Revision No. History Draft Date

EM6A9320BIA-4H

Abstract: EM6A9320BIA ba1s EM6A9320BI EM6A9320 EM6A9320BIA-5H J3J10 e-tron
Contextual Info: EtronTech EM6A9320BIA 4M x 32 bit DDR Synchronous DRAM SDRAM Etron Confidential Preliminary (Rev 1.7 Nov. /2009) Features Overview • Fast clock rate: 200/250 MHz • Differential Clock CK & CK input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM

SAMSUNG GDDR4

Abstract: K4U52324QE GDDR4 twido K4U52324QE-BC09 HYNIX charge pump T21N 136ball K4U52324QE-BC07 k4u52324qe-bc08
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.2 May 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

DDR RAM 512M

Abstract: K4J52324QC-BC14 Hynix Cross Reference hynix memory h9 ddr2 K4J52324Q K4J52324QC-BJ12 mark t5n gddr3 K4J52324QC-BC20 K4J52324QC-A
Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.0 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

H5TC2G83EFR

Abstract: DDR3L-1866
Contextual Info: 240pin DDR3L SDRAM VLP Registered DIMM DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die HMT325V7EFR8A HMT351V7EFR4A HMT351V7EFR8A *SK hynix reserves the right to change products or specifications without notice. Rev. 0.1 / Dec. 2012 1 Revision History Revision No.

DDR2 x32

Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.2 September 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: 512M GDDR3 SDRAM K4J52324QC-B 512Mbit GDDR3 SDRAM Revision 1.4 March 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4J52324Qc

Contextual Info: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

AS4DDR232M72PBG

Contextual Info: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

EM47EM3288MBA

Contextual Info: EM47EM3288MBA 8Gb 32Mx8Bank×32 Double DATA RATE 3 Stack SDRAM Features Description • VDD/VDDQ = 1.35V -0.065/+0.1V. • Backward compatible to VDD = VDDQ = 1.5V ±0.075V.Supports DDR3L devices to be backward compatible in 1.5V applications. • Fully differential clock inputs (CK, /CK) operation.

136ball

Contextual Info: 256M GDDR3 SDRAM K4J55323QG-BC 256Mbit GDDR3 SDRAM Revision 1.0 June 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

AGE T6N 600

Abstract: AS4DDR232M72PBG
Contextual Info: PRELIMINARY INFORMATION L9D225G80BG5 2.5 Gb, DDR2, 32 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

FBGA DDR3

Abstract: AS4DDR264M72PBG E-1150 55125C
Contextual Info: PRELIMINARY INFORMATION L9D250G80BG5 5.0 Gb, DDR2, 64 M x 80[72] Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 25mm x 25mm – 255PBGA, 1.27mm pitch Differential Data Strobe (DQS, DQSx\) per byte

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

MT41J

Abstract: 256M8 MT41J256m8 fbga
Contextual Info: Advance‡ 2Gb: x4, x8 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks Features • • • • • • • • • • • • • • • • • • • • • Options VDD = VDDQ = +1.5V ±0.075V 1.5V center-terminated push-pull I/O