CMOS IC AND GATES Search Results

Contextual Info: High-Reliability Advanced CMOS Logic IC s - CD54AC00/3A CD54ACT00/3A Quad 2-lnput NAND Gate ZH The RCA CD54ACOO/3A and CD54ACT00/3A are quad 2input NAND gates that utilize the new RCA ADVANCED CMOS LO G IC te ch n o lo g y. The CD54AC00/3A and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UCD4002B Preliminary CMOS IC CMOS NOR Gates High-Voltage Types „ DESCRIPTION UCD4002B NOR gate provides the system designer with direct implementation of the NOR function and supplements the existing family of CMOS gates.All inputs and outputs are buffered.

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

applications 4046b

Abstract: unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB
Contextual Info: ICAN-6558 Understanding Buffered and Unbuffered CMOS Characteristics by R. E. Funk INTRODUCTION Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from RCA; each pro­ duct classification has application advantages

CBV2

Abstract: HN27C301
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

CBV2

Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

flash 32 Pin PLCC 16mbit

Abstract: 398x
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

0.18-um CMOS technology characteristics

Abstract: TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200
Contextual Info: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2010/9 SCE0004K To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and

TOSHIBA TC160

Abstract: 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G
Contextual Info: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2009-8 SCE0004I To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and

toshiba Transistors catalog

Abstract: TC200 TC220C TC220E TC280 TC280C toshiba semiconductor catalog tc190c TC223G 65-nm CMOS standard cell library process technology
Contextual Info: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2011/9 SCE0004L To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and

TOSHIBA TC160

Abstract: TC300C TC260 TOSHIBA standard cell library 130 nm CMOS standard cell library toshiba TC200G 90 nm CMOS Cell-based ASIC TC223C TC280 TC203G/E
Contextual Info: Semi-Custom ICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 62 62 63 57 To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and

MIL-STD-806

Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Contextual Info: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted

transistor bc 567

Abstract: Bipolar Integrated Technology show the structure of integrated circuit cmos integrated circuits CMOS Linear Integrated Circuit SLLA065 SN65LVDS050 SN65LVDS31 SN65LVDS32 transistor bc 564
Contextual Info: Application Report SLLA065 - MARCH 2000 A Comparison of LinBiCMOS and CMOS Process Technology in LVDS Integrated Circuits Rick Jordanger Interface IC Design Engineering ABSTRACT This application report compares LinBiCMOS and pure CMOS technologies for the design of

BU12460

Abstract: bu12306 BU124 l 6283 BU12300 BU12310
Contextual Info: M o n o lith ic IC s 0 .8 //m CMOS Gate Array BU12K Family The BU12K family of gate arrays are SOG Sea Of Gates gate arrays based on 0.8 / x m CMOS technology. Its base series includes the BU12300 series (multi I/O type) and BU12400 series (capable of driving with a current as large as 40mA).

MG1140E

Abstract: 000GATES
Contextual Info: Tem ic Array MATRA MHS MG1RT : Radiation Tolerant 0.6|im CMOS Sea Of Gates Description TEMIC / MATRA MHS is the first European supplier for space application submicronic radiation tolerant CMOS ASICs. This is why TEMIC keeps offering a fluent way of moving up and down the quality and the space/radiation

Contextual Info: E M IC O N D U C T Q R r MM74HC08 Quad 2-Input AND Gate General Description Features These AND gates utilize advanced silicon-gate CMOS tech­ nology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS inte­

FRW17

Abstract: CMOS IC oki Package
Contextual Info: Note» on Usage O K I Semiconductor Notes on Usage 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the latch-up, presence of input pins not in use, and other

Contextual Info: O K I Semiconductor INTRODUCTION ♦ NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the lateh-up, presence of input pins not in use, and other

static charge meter

Contextual Info: O K I Semiconductor NOTES ON USAGE ♦ NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are widely used in digital equipment due to their low power dissipation, high degree of margin for noise and wide operating power supply range. However, CMOS IC chips need to be handled carefully because of the latch-up, presence of input pins not in use, and other

98P05

Contextual Info: E2D5009-27-50 O K I Semiconductor ♦NOTES ON USAGE 1. INTRODUCTION CMOS IC chips are w idely used in digital equipment d u e to their low pow er dissipation, high degree of m argin for noise and w ide operating pow er supply range. H ow ever, CMOS IC chips

ECN3053

Abstract: ECN3053F high voltage 3-phase motor driver ic application for high gain cmos opamp
Contextual Info: HIGH VOLTAGE MONOLITHIC IC ECN3053F 3-Phase Motor Bridge Driver IC The ECN3053F drives a 3-Phase Motor Bridge with 3 TOP and 3 BOTTOM Arms, Push-Pull Output Drivers controlled by 6 CMOS inputs. Built in a High Voltage Dielectric Isolation Process, this Latch-Up Free IC can directly drive 6 IGBT or MOSFET gates in

TLP351

Abstract: TLP351 equivalent TLP251
Contextual Info: New Product Guide 2002-9 IGBT/Power MOSFET Gate Drive Photo-IC Coupler TLP351 The TLP351 photo-IC coupler is capable of driving the gates of IGBTs and power MOSFETs directly for which the addition of a gate resistor is necessary . By employing Bi-CMOS process

SP 1191

Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
Contextual Info: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS