MT4C4256 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

4C4256

Contextual Info: M T4C4256 L 256K X 4 DRAM |V |IC Z R O N DRAM 256K x 4 DRAM FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V +10% power supply

Contextual Info: MT4C4256 256K X 4 DRAM [MICRON 256K X 4 DRAM DRAM FAST PAGE MODE FEATURES PIN A S S IG N M E N T Top View • Industry standard x4 pinout, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply

4C4256

Contextual Info: OBSOLETE MICRON I M T 4 C 4 2 5 6 L 256K X 4 DRAM SEUICO NDUCTO R.INC. DRAM 256K X 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8m s (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, tim ing, functions and

MT4C4256

Abstract: 20-PIN MT4C4256DJ-7
Contextual Info: OBSOLETE MT4C4256 L 256K x 4 DRAM DRAM 256K x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: MT4C4256 L 256K X 4 DRAM [M IC R O N 256K DRAM X 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: M IC R O N 256K DRAM MT4C4256 X 4 DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical

MT4C4256DJ-7

Abstract: BBU RRH
Contextual Info: MT4C4256 L 256K X 4 DRAM I^ IIC Z R O N DRAM 256K x 4 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

MT4C1024E

Abstract: MT4C1024E-12 MT4C4256E
Contextual Info: M IC R O M ERRATA DATA SHEET • TKHNOUXW. MC. 2805 East Columbia Road Bolso, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 Q uality • Perform ance • Service r - v é -2.3- i f (1 MEG PAGE MODE DRAM) MT4C1024E MT4C4256E FEATURES • • • • •

mt4c1004

Contextual Info: A SÌ y M S ' l f \ : Si MI* 0 \ | 5 . < I O f l j , \ !* GUIDE R ^ F F R F N C F AUSTIN SEMICONDUCTOR APPROVED SM D’S Continued) SMD ASI PART NUMBER MT4C4067 MT4C1004 MT4C1001 MT4C4256 PACKAGE TYPE (t) SPEED (its) PART NUMBER C CN EC 100 120 150 9213201

Contextual Info: MICRON SEMICONDUCTOR INC b3E D • GG07b0S T7T ■ URN MT4C4256 L 256K X 4 DRAM MICRON 256K X 4 DRAM DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cycle refresh in 8ms (MT4C4256) or 64ms (MT4C4256 L) • Industry-standard x4 pinout, timing, functions and

Contextual Info: MT4C4256 L 256K X 4 DRAM I^IICRON DRAM 256K X 4 DRAM FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, .3mW standby; 150mW active, typical

Contextual Info: MICRON TECHNOLOGY INC SSE D m DQ0M2SÖ ^Qâ • MRN MT4C4256 L 256K X 4 DRAM fVIICIRON ORAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH o 30 > FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process

K1992

Contextual Info: MT4C4256 L 2 56 K X 4 D R A M M IC R O N DRAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, .3mW standby; 150mW active, typical

MT4C4256

Contextual Info: MT4C4256 883C 256K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 256K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-90617 • MIL-STD-883 20-Pin DIP (D-8) 20-Pin LCC FEATURES • Industry standard pinout and timing

Contextual Info: PRELIMINARY MT4C4256 VL 256K X 4 DRAM I^ICZRON 256K DRAM m 4 DRAM X D 3.3V, EXTENDED REFRESH 30 FEATURES • • • • • • • • • • • • > PIN A SSIG N M EN T Top View Best memory solution for 3.3V flat-panel controllers Single +3.3V ±5% pow er supply

Contextual Info: MICRON TECHNOLOGY INC Ì7E ß • blllSMT MICRON ■ 00D17Sñ'0 MT4C4256 883C HitMXOC.Y WC MILITARY DRAM 256K X 4 DRAM FAST PAGE MODE DRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D (consult factory for reference number) 20U300 DIP

marking WMM

Abstract: RA52 1cas5 22r29
Contextual Info: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical

MT43C8129A

Contextual Info: PRELIMINARY MT43C8128A/9A 128K x 8 TRIPLE-PORT DRAM |V|ICRON 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • • • • • • • • • • • • Three asynchronous, independent, data access ports Fast access times: 70ns random, 22ns serial O peration and control compatible with 1 M eg VRAMs

micron DRAM

Contextual Info: PRELIMINARY MT42C8255 256K X 8 VRAM MICRON 256K x 8 DRAM WITH 512 x 8 SAM VRAM FEATURES • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply

Contextual Info: M IC R O N 512K 512K X MT20D51240 40 DRAM MODULE 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.

Contextual Info: ADVANCE MT4V25632 256K x 32 VRAM MODULE |U|ICRON VRAM MODULE 256K x 32 DRAM WITH 512 x 32 SAM PIN ASSIGNMENT Top View 104-Pin SIMM • Proposed industry-standard pinout in a 104-pin single­ in-line package • High-perform ance, CM O S silicon-gate process