Untitled
Abstract: No abstract text available
Text: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.
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LKE21004R
Abstract: n 431 transistor
Text: LKE21004R NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21004R is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting
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LKE21004R
LKE21004R
n 431 transistor
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LKE21015R
Abstract: IC 431
Text: LKE21015R NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21015R is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting
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LKE21015R
LKE21015R
IC 431
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h a 431 transistor
Abstract: LKE21050T n 431 transistor transistor F 0552 b 342 d transistor
Text: LKE21050T NPN SILICON MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI LKE21050T is Designed for Class A, Common Emitter, linear power amplifier Applications up to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting
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LKE21050T
LKE21050T
h a 431 transistor
n 431 transistor
transistor F 0552
b 342 d transistor
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d 317 transistor
Abstract: LTE21015R common emitter amplifier b 342 d transistor
Text: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting
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LTE21015R
LTE21015R
ASI10473
d 317 transistor
common emitter amplifier
b 342 d transistor
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TVU100A
Abstract: TVU150
Text: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TVU150 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Band IV-V TV Transmitters. FEATURES INCLUDE : • Gold Metalization • Internal Matching • Emitter Ballasting
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TVU150
TVU150
TVU100A
TVU100A
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common emitter amplifier
Abstract: b 342 d transistor
Text: LV2024E45R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LV2024E45R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: • Replacement for Philips LV2024E45R • Gold Metalization • Emitter Ballasting PACKAGE STYLE .250 2L FLG
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LV2024E45R
LV2024E45R
ASI10472
common emitter amplifier
b 342 d transistor
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SD1169
Abstract: No abstract text available
Text: SD1169 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1169 is a Common Emitter Device Designed for Class C Amplifier Applications in HF Land Mobile Radios. PACKAGE STYLE .500 4L STUD FEATURES INCLUDE: • Aluminum Metalization • Emitter Ballasting
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SD1169
SD1169
100mA
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BLV59
Abstract: No abstract text available
Text: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting
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BLV59
BLV59
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Common emitter amplifier
Abstract: "RF Power Transistor" LKE21015R LKE21015T
Text: LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: • Replacement for Philips LKE21015R • Gold Metalization • Diffused Emitter Ballasting
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LKE21015T
LKE21015T
LKE21015R
Common emitter amplifier
"RF Power Transistor"
LKE21015R
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VTV-300
Abstract: VTV300
Text: VTV300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV300 is Designed for Class A Amplifier Applications up to 225 MHz. FEATURES INCLUDE: PACKAGE STYLE 500- 6LFLG • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 14 A
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VTV300
VTV300
VTV-300
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TPV590
Abstract: No abstract text available
Text: TPV590 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV590 is a Common Emitter Device Designed for Class A High Linearity Amplifier Applications in TV Band IV-V Transmitters. PACKAGE STYLE 205 4L STUD FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting
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TPV590
TPV590
-16dB
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PT3642
Abstract: amplifier class c
Text: PT3642 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT3642 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS
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PT3642
PT3642
400MHz.
amplifier class c
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2N5070
Abstract: 2N507
Text: 2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High PACKAGE STYLE TO- 60 Power Linear Amplifier Application in the 2.0 to 75 MHz Range. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC
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2N5070
2N5070
2N507
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sd1490
Abstract: No abstract text available
Text: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching
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SD1490
SD1490
-16dB
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VTV075
Abstract: No abstract text available
Text: VTV075 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV075 is Designed for Class A Amplifier Applications up to 225 MHz. PACKAGE STYLE 500- 6LFLG FEATURES INCLUDE: • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 4.0 A
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VTV075
VTV075
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Untitled
Abstract: No abstract text available
Text: TVU100AX NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU100AX is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Input Matched • Emitter Ballasting
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TVU100AX
TVU100AX
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VTV-150
Abstract: VTV150
Text: VTV150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VTV150 is Designed for Class A Amplifier Applications up to 225 MHz. FEATURES INCLUDE: PACKAGE STYLE 500- 6LFLG • Common Emitter • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC 8.0 A
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VTV150
VTV150
VTV-150
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MRF839
Abstract: MRF839F
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF839 MRF839F The RF Line NPN Silicon RF Power Transistors 2 3 W 806-960 MHz RF POWER TRANSISTORS COMMON-EMITTER NPN SILICON . . . designed for 12.5 Volt UHF large-signal, common-emitter amplifier applications in
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MRF839F
MRF839
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vp 3082
Abstract: CA3081 CA3082
Text: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter
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CA3081,
CA3082
CA3081
CA3082
100mA)
vp 3082
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m 32 ab transistor
Abstract: mlc444 bd239 equivalent
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated common-emitter structure provides high emitter
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LXE15450X
m 32 ab transistor
mlc444
bd239 equivalent
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diode BY239
Abstract: bd239 equivalent Transistor Equivalent list MLC446 copper permittivity 43081 BD239 BY239 LXE15450X SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LXE15450X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R amplifier. • Interdigitated common-emitter
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LXE15450X
MLC446
OT439A.
diode BY239
bd239 equivalent
Transistor Equivalent list
MLC446
copper permittivity
43081
BD239
BY239
LXE15450X
SC15
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Untitled
Abstract: No abstract text available
Text: m 2N3632 \ \ NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B>C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. PACKAGE STYLE T O -60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package
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2N3632
2N3632
400MHz.
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CE 65 M
Abstract: No abstract text available
Text: 2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering 130 TO 400MHz. FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package PACKAGE STYLE TO- 60 MINIMUM
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2N3632
400MHz.
CE 65 M
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