CR05A Search Results

MCR100

Abstract: SCR PNPN CR05AS CR05AS-4 SCR TRIGGER PULSE circuit CR05AS-8 cr05as-6
Contextual Info: CR05AS Series MCR100 Series i Sensitive Gate Silicon Controlled Rectifiers SCR 0.8 AMPERES RMS 300 thru 800 VOLTS Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate

Contextual Info: Preliminary Datasheet CR05AM-16A Thyristor R07DS0988EJ0100 Rev.1.00 Dec 05, 2012 Low Power Use Features • IT AV : 0.3 A  VDRM : 800 V  IGT: 100 A  Planar Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 2 1. Cathode 2. Anode

Contextual Info: Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 Previous: REJ03G0348-0400 Rev.5.00 Sep 15, 2010 Thyristor Low Power Use Features • Non-Insulated Type  Planar Passivation Type  Surface Mounted type  IT (AV) : 0.5 A  VDRM : 400 V  IGT : 100 A

CR05A

Abstract: CR05AS-8 CR05AS-8-ET14 LZZ0004CB-A cr05as RENESAS UPAK MARK V1
Contextual Info: Preliminary Datasheet CR05AS-8 R07DS0135EJ0500 Previous: REJ03G0348-0400 Rev.5.00 Sep 15, 2010 Thyristor Low Power Use Features • Non-Insulated Type  Planar Passivation Type  Surface Mounted type  IT (AV) : 0.5 A  VDRM : 400 V  IGT : 100 A

CR05AM-16

Contextual Info: CR05AM-16 Thyristor Low Power Use REJ03G0356-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.3 A • VDRM : 800 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline TO-92 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter

CR05AM-12

Abstract: CR05AM-12-A6 CR05AM-12-TB
Contextual Info: CR05AM-12 Thyristor Low Power Use REJ03G0353-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.3 A • VDRM : 600 V • IGT : 100 µA • Non-Insulated Type • Glass Passivation Type Outline TO-92 2 1. Cathode 2. Anode 3. Gate 3 1 3 2 1 Applications Leakage protector, timer, and gas igniter

CR05AS-8

Abstract: CR05AS-8-ET14 RENESAS SOT-89 V1 SOT-89 MARK V1 CR05A
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0300 Rev.3.00 Mar 22, 2007 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 RENESAS Package code: PLZZ0004CB-A

T3D 1N

Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 1 J r iin n ln t: 0 .5 ± 0 .0 7 \— \ 0 .4 ± 0 .0 7 -h i p1.5±0.1 1.5±0.1

Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0100 Rev.1.00 Aug.20.2004 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications

RENESAS UPAK V1

Abstract: CR05A
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0400 Rev.4.00 Dec 10, 2008 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 G

thyristor sot-89

Abstract: CR05AS-8
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0348-0200 Rev.2.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CB-A (Package name: SOT-89) 2, 4 4 1 2 3 3 1. 2. 3. 4.

CR05AS-8

Abstract: CR05AS-8-ET14
Contextual Info: CR05AS-8 Thyristor Low Power Use REJ03G0543-0100 Rev.1.00 Mar.01.2005 Features • IT AV : 0.5 A • VDRM : 400 V • IGT : 100 µA • Non-Insulated Type • Planar Passivation Type Outline PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 4 3 1. 2. 3. 4. Cathode

thyristor sot-89

Abstract: CR05AS CR05A
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 ➂ 2.5±0.1 ➁ 3.9±0.3 0.8 MIN ➀ 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

solid state flasher circuit 5A current

Abstract: CR05AS
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR05AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CR05AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 2.5±0.1 2 3.9±0.3 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

CR05AS

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

CR05A

Abstract: uPD70423 CR04A CR08B TCS4H CR08A DW01 Plus application DW01 PLUS ND3N PD72001
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT V55SC 16-BIT MICROPROCESSOR DESCRIPTION The #iPD70423 also called V55SC is a microprocessor with a 16-bit CPU, RAM UART, timer, DMA controller, and interrupt controller all integrated on one chip. The V55SC is one in the V55 family and is software compatible with the single-chip microcomputer

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid