CY62137 Search Results

CY62137EV30

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

48 ball VFBGA

Abstract: CY62137CV30 CY62137EV30
Contextual Info: CY62137EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV30 • Ultra-low standby power — Typical standby current: 1µA — Maximum standby current: 7µA

CY62137CV30

Abstract: CY62137EV30
Contextual Info: CY62137EV30 MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62137CV30 • Ultra-low standby power — Typical standby current: 1µA — Maximum standby current: 7µA

CY62137CV18

Abstract: 1105
Contextual Info: CY62137CV18 MoBL2 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a

A15C

Abstract: CY62137V CY62137V18 CY62137VLL-70BAI CY62137VLL-70ZI CY62137
Contextual Info: CY62137V MoBL CY62137V18 MoBL2™ CYPRESS 1 2 8 K x 1 6 S ta tic R A M Features are placed in a h igh -im pe da nce state w h en : de selected CE HIG H , ou tputs are disabled (OE HIG H), BHE and BLE are disabled (B H E , BLE HIG H), o r during a w rite op era tion (CE

Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

Contextual Info: PRELIMINARY CY62137V MoBL 128K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: — 1.8V–3.3V • Ultra-low active, standby power • Easy memory expansion with CE and OE features

2VCC-02

Contextual Info: CY62137FV18 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the

Contextual Info: CY62137FV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features • Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V–3.60 V ■ Pin compatible with CY62137CV/CV25/CV30/CV33,

AN1064

Abstract: CY62137EV30 CY62137FV30 CY62137FV30LL CY62137V
Contextual Info: CY62137FV30 MoBL 2-Mbit 128K x 16 Static RAM is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90% when addresses are not toggling. Placing

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

CY62137CV

Abstract: CY62137CV30LL CY62137CV33LL CY62137CVSL CY62137V fbga 12 x 12 thermal resistance
Contextual Info: CY62137CV30/33 MoBL CY62137CV MoBL® 2-Mbit 128K x 16 Static RAM Features • Very high speed — 55 ns • Temperature Ranges — Industrial: - 40°C to + 85°C — Automotive: - 40°C to + 125°C • Pin-compatible with the CY62137V • Ultra-low active power

Contextual Info: CY62137EV30 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

CY62137

Contextual Info: CY62137FV30 MoBL Automotive 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an

Contextual Info: CY62137CV18 MoBL2TM PRELIMINARY 128K x 16 Static RAM Features • Low voltage range: — CY62137CV18: 1.65V−1.95V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62137CV

Abstract: CY62137V
Contextual Info: CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put

CY62137CV

Abstract: CY62137V CY62137CVSL-70BAI
Contextual Info: CY62137CV25/30/33 MoBL CY62137CV MoBL® 2M 128K x 16 Static RAM Life (MoBL®) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put

VDR 0047

Abstract: CY62137V CY62137VSL
Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • • • • • • • • — Automotive: –40°C to 125°C High Speed: 55 ns and 70 ns Wide voltage range: 2.7V–3.6V

Contextual Info: CY62137CV18 MoBL2 128K x 16 Static RAM Features deselected CE HIGH or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are

55BA

Abstract: ultra fine pitch BGA CY62137V CY62137VLL-55ZI
Contextual Info: 37V18 CY62137V MoBL 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range: — CY62137V: 2.7V–3.6V

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

VDR 0047

Abstract: CY62137V
Contextual Info: CY62137V MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected

CY62137V

Abstract: CY62137V18 CY62137VLL-55ZI CY62137VLL-70ZI
Contextual Info: 1*CY62137V18 MoBL2 CY62137V MoBL™ 128K x 16 Static RAM Features high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW). • Low voltage range:

Contextual Info: CY62137FV18 MoBL 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an