CY62147CV25 Search Results

ultra fine pitch BGA

Abstract: CY62147CV25 CY62147CV30 CY62147CV33 CY62147V
Contextual Info: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

Contextual Info: CY62147CV25/30/33 ADVANCE INFORMATION MoBL 256K x 16 Static RAM are placed in a high-impedance state when: deselected CE HIGH , outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: 1May 7, 2001May 7, 2001*CY62147V MoBL CY62147CV25/30/33 ADVANCE INFORMATION MoBLTM 256K x 16 Static RAM Features and BHE are HIGH. The input/output pins I/O0 through I/O15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are

Contextual Info: 147V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to +85°C — Automotive: –40°C to +125°C • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62147CV25, CY62147CV30, and

Contextual Info: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

CY62147CV25

Abstract: CY62147CV30 CY62147CV33 CY62147V
Contextual Info: 47V CY62147CV25/30/33 MoBL 256K x 16 Static RAM Features cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected CE HIGH or both BLE and BHE are HIGH . The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are

CY62147CV25

Abstract: CY62147CV30 CY62147CV33 CY62147DV30
Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable

CY62147DV30

Abstract: CY62147CV25 CY62147CV30 CY62147CV33
Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces

Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The

Contextual Info: ADVANCE INFORMATION CY62147DV30 4 Mb 256K x 16 Static RAM Features The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when:

Contextual Info: CY62147DV30 4-Mbit 256K x 16 Static RAM Features vanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces