CY62157EV Search Results

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157EV30LL-45BVXI

Abstract: TSOP 48 thermal resistance
Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features consumption when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output

Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1

AN1064

Abstract: CY62157DV30 CY62157EV30
Contextual Info: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

AN1064

Abstract: CY62157DV30 CY62157EV30 CY62157EV30LL-55ZXE CY62157EV30Ll-45zxa
Contextual Info: CY62157EV30 MoBL 8 Mbit 512K x 16 Static RAM Features • TSOP I Package Configurable as 512K x 16 or 1M x 8 SRAM ■ High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ❐ Automotive-E: –40°C to +125°C

Contextual Info: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V

Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

Contextual Info: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges

CY62157EV30

Abstract: CY62157EV30LL AN1064 CY62157DV30 CY62157 220V DC TEMPERATURE CONTROL
Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA

JTAG CONNECTOR

Abstract: ADM3202ARUZ Bluetooth Transceiver Module RS232 JTAG MODULE SPI XC3S1000-4FGG456C 12V2A xcf04svog20c ppi to rs232 AD1938 BLACKFIN JTAG
Contextual Info: ADP1864AUJZ-R7 5V0 ADP2107ACPZ-R7 DC/DC Down 1.2V@2A FPGA DC/DC Down 5.0V@2A 1V2 ConnectBlue WLAN Module ADP1715-2.5 ADP1864AUJZ-R7 12V Power Jack 3V3 2V5 LDOs Audio Camera Stereo-Out Vcam1 On-Board USB-OTG CM—BF527 Only Vcam2 AD1938/AS1936 CY62157EV30LL45BVXI

CY62157EV30 MoBL

Abstract: CY62157EV30LL-45ZSXI CY62157 AN1064 CY62157DV30 CY62157EV30 CY62157EV30LL DSA0025657
Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • High speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin compatible with CY62157DV30 • Ultra low standby power — Typical Standby current: 2 µA

CY62157

Abstract: CY62157EV30LL-45BVXI
Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode when

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

CY62157EV30LL-45BVI

Abstract: CY62157EV
Contextual Info: CY62157EV30 MoBL 8-Mbit 512K x 16 Static RAM Features • TSOP I package configurable as 512K x 16 or as 1M x 8 SRAM • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62157DV30 • Ultra-low standby power — Typical Standby current: 2 µA

7688 memory chip

Abstract: CY62157EV30 CY62158DV30 CY62158EV30LL CY62158EV30LL-45BVXI CY62158EV30LL-45ZSXI CY62158E CY62157
Contextual Info: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description [2] Features • Very high speed: 45 ns The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current.

CY62157EV

Contextual Info: CY62158EV30 MoBL 8-Mbit 1024K x 8 Static RAM Functional Description[2] Features • Very high speed: 45 ns The CY62158EV30 is a high-performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra-low active current.