CY7C197 Search Results

CY7C197

Contextual Info: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable

Contextual Info: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs

Contextual Info: CY7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable

Contextual Info: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs

CY7C197

Abstract: C1971
Contextual Info: 97 CY7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable

CY7C197

Contextual Info: CY7C197 256K x 1 Static RAM Features D D D D D D The CY7C197 is a highĆperformance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C197 has an automatic powerĆdown

Contextual Info: CY7C197 CYPRESS SEMICONDUCTOR Features 2 5 6 K x l Static R/W RAM Functional Description High speed — 12 ns CMOS for optimum speed/power Low active power — 880 mW Low standby power — 220 mW TTL-compatible imputs and outputs Automatic power-down when

7C197

Contextual Info: Data Sheet February 1992 , H &t Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and CY7C197 ■ Automatic powerdown during long cycles

p13ab

Contextual Info: .»•WMMlUAv. SS ^777777^^^^^"^ •WWWWWWWJK^' . v , '*v^ CY7C197 ÿfp?' 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected.

Contextual Info: CY7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The CY7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is

Contextual Info: CY7C197N 256Kx1 Static RAM Features Functional Description • High speed The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The CY7C197N has an automatic power-down

CY7C197N

Abstract: CY7C197N-25PXC CY7C197N-45PXC
Contextual Info: CY7C197N 256Kx1 Static RAM Features Functional Description • High speed The CY7C197N is a high-performance CMOS static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. The CY7C197N has an automatic power-down

CY7C197BN

Abstract: CY7C197BN-12VC CY7C197BN-15VC CY7C197BN-25PC TAA 691
Contextual Info: CY7C197BN 256 Kb 256K x 1 Static RAM General Description [1] Features • • • • • Fast access time: 12 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL compatible inputs and outputs Available in 24-lead DIP and 24-lead SOJ

7c197

Contextual Info: CY7C197 '/C Y P R E S S 256K x 1 Static RAM Features Functional Description • High speed — 12 ns • CMOS for optimum speed/power location specified on the address pins Ao through A n . The CY7C197 is a high-performance CMOS static RAM organized as 256K

ZP101

Abstract: C1971 CY7C197
Contextual Info: CY7C197 ' / CYPR ESS 256K x 1 Static RAM Features Functional Description • High speed — 12 ns • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when

C1974

Abstract: c1971 C1972 CY7C197 C1973 C1975
Contextual Info: CY7C197 256Kx1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable

Contextual Info: CY7C197 CYPRESS 2 5 6 K x l Static RAM Features Functional Description • lo c a tio n sp ecified o n th e a d d re ss p in s Ao th ro u g h A 17 . T h e C Y 7C 197 is a h ig h -p e rfo rm an ce C M O S s ta tic R A M o rg an ized as 256K w ords by 1 bit. E asy m e m o ry e x p a n sio n is

Contextual Info: CY7C197BN 256-Kb 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description [1] • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs

CY7C197B

Abstract: CY7C197B-12VC CY7C197B-25PC
Contextual Info: CY7C197B 256 Kb 256K x 1 Static RAM General Description1 Features The CY7C197B is a high-performance CMOS Asynchronous SRAM organized as 256K x 1 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces

Contextual Info: CY7C197BN 256-Kbit 256 K x 1 Static RAM 256-Kb (256 K × 1) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ CMOS for optimum speed and power ■ TTL compatible inputs and outputs

Hitachi 32k static RAM

Abstract: CY7C192 CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99011 VERSION 1.0 April, 1999 256K Static RAM, R28 Technology, Fab 2 CY7C191/192 64K x 4 Static RAM With Separate I/O CY7C194/195/196 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C199 32K x 9 Static RAM

MOS 4532

Abstract: CY7C197 CY7C199 JESD22 64K X 4 SRAM
Contextual Info: Qualification Report December 1996, QTP# 96294, Version 1.2 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C197 256K x 1 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

Contextual Info: CY7C197N 256 K x 1 Static RAM 256 K × 1 Static RAM Features Functional Description • High speed ❐ 25 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 880 mW The CY7C197N is a high-performance CMOS static RAM organized as 256 K words by 1 bit. Easy memory expansion is

CY7C197

Contextual Info: CY7C197 V CYPRESS 256Kx1 Static RAM vided by an active LOW Chip Enable CE and three-state driv­ ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. Features • High speed — 12 ns Writing to the device is accomplished when the Chip Enable