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    CYSH12AF

    Abstract: ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall
    Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It


    Original     		PDF CYSH12AF CYSH12AF CYTY101A. 30CYCLE 10sec 300g/30sec 200pF, D-85464 ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It


    Original     		PDF CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464

    CYSH12AF

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It


    Original     		PDF CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464