HP5082-2800
Abstract: OP90GPZ OP903 D-0032-1 741 OP Amp application integrator op90
Text: a Precision Low-Voltage Micropower Operational Amplifier OP90 FEATURES Single/Dual Supply Operation: 1.6 V to 36 V, ؎0.8 V to ؎18 V True Single-Supply Operation; Input and Output Voltage Ranges Include Ground Low Supply Current: 20 A Max High Output Drive: 5 mA Min
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D00321-0-12/11
HP5082-2800
OP90GPZ
OP903
D-0032-1
741 OP Amp application integrator
op90
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Untitled
Abstract: No abstract text available
Text: .the world's most energy friendly microcontrollers EFM32TG108 DATASHEET F32/F16/F8/F4 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 32 MHz • Wake-up Interrupt Controller • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode
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EFM32TG108
F32/F16/F8/F4
32-bit
QFN24
EFM32TG108FXX
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Untitled
Abstract: No abstract text available
Text: .the world's most energy friendly microcontrollers EFM32TG108 DATASHEET F32/F16/F8/F4 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 32 MHz • Wake-up Interrupt Controller • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode
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EFM32TG108
F32/F16/F8/F4
32-bit
QFN24
EFM32TG108FXX
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marking t081
Abstract: D0032 68HC11 XL25081P XL25081Y T07 marking
Text: XL25081 EXEL Microelectronics, Inc. 8K-bit SPI Nonvolatile Memory Preliminary Information FEATURES • Motorola SPI Modes 0 and 3 and SIOP Compatible • 2MHz Data Transfer Rate • Low Power CMOS • Active Current - Less than 3mA — Standby Current @ 5.5V Vcc - 5µA
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XL25081
D0032
marking t081
68HC11
XL25081P
XL25081Y
T07 marking
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IPC 7351B
Abstract: No abstract text available
Text: .the world's most energy friendly microcontrollers EFM32TG108 DATASHEET F32/F16/F8/F4 • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 32 MHz • Wake-up Interrupt Controller • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode
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EFM32TG108
F32/F16/F8/F4
32-bit
QFN24
EFM32TG108FXX
IPC 7351B
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DAC8221
Abstract: No abstract text available
Text: Dual Low Offset, Low Power Operational Amplifier OP200 Data Sheet PIN CONNECTIONS Low input offset voltage: 75 µV maximum Low offset voltage drift, over −55°C < TA < +125°C 0.5 µV/°C maximum Low supply current per amplifier : 725 µA maximum High open-loop gain: 5000 V/mV minimum
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OP200
16-Lead
OP200AZ
OP200EZ
OP200GPZ
OP200GS
OP200GSZ
OP200GSZ-REEL
DAC8221
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EFM32
Abstract: EFM32TG EFM32TG108F32 EFM32TG108F4 Cortex-M3 Reference Manual
Text: .the world's most energy friendly microcontrollers EFM32TG108 DATASHEET F32/F16/F8/F4 Preliminary • ARM Cortex-M3 CPU platform • High Performance 32-bit processor @ up to 32 MHz • Wake-up Interrupt Controller • Flexible Energy Management System • 20 nA @ 3 V Shutoff Mode
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EFM32TG108
F32/F16/F8/F4
32-bit
QFN24
EFM32
EFM32TG
EFM32TG108F32
EFM32TG108F4
Cortex-M3 Reference Manual
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TO92-EBC
Abstract: mpsd54
Text: ROHM CO LTD llD E D VflEâ'm D0032Ô3 7 IRHM transistors 7 = 3 /-/T T-27-29 Medium Power Amplifiers Type RN5815 RN5817 RN5819 Package Fig-1 TO-92 (EBC) TO-92 (EBC) TO-92 (EBC) BVcbo BVceo BVebo Min, Min. Min. . 50V 50V 50V MPS4354 TO-92 (EBC) 60V MPS4355
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D0032
RN5815
RN5817
RN5819
100nA
100nA'
500mA
TO92-EBC
mpsd54
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HW012
Abstract: HW443 MHW591 HW233 HW247 HW433 HWD16 NTE12 HWD15 HW068
Text: N T E ELECTRONICS INC bME D Hi b43125^ D00327S fl3S * N T E M2 WATT METAL Value in Ohms NTE Stock Number NTE Stock Number Value in Ohms NTE Stock Number Value in Ohms Value in Ohms NTE Stock Number NTE Stock Number Value in Ohms Value in Ohms NTE Stock Number
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b43125^
D00327S
HWD10
HWD11
HWD12
HWD13
HWD15
HWD16
HWD18
HWD20
HW012
HW443
MHW591
HW233
HW247
HW433
HWD16
NTE12
HWD15
HW068
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Untitled
Abstract: No abstract text available
Text: Ì m TAIWAN LITON ELECTRONIC «M i LITE HTE f li^ t ^ S ]> D003245 flflT GaAs T-l MODIFIED 3<t> INFRARED EMITTING DIODE LTE-208/209C • - f M I l] S $ £ ì&%ìI& I j ìì FEATURES • SELECTED TO S P E C IF IC A N D R A D IA N T O N -L IN E IN T E N S IT Y
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D003245
LTE-208/209C
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC 4TE D • 8335^5 D0032A1 fllT ■ TLIT . _ :-'Ì RÌW- c- ' PHO TO DETECTO R ^ A K A. ^ V‘- ■:'• ' Ì ® LTR-4206/4206E FEATURES • W ID E RANGE • LE N S E D OF CO LLEC TO R CURRENTS. FO R H IG H S E N S IT IV IT Y
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D0032A1
LTR-4206/4206E
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Fdd spindle motor circuit
Abstract: SLO 365 R 6476FP 3-phase motor drive fdd motor driver BA6485FP A 3121 IC D0032M fdd spindle controller 64 pin motor drive
Text: ROHM CO LT D 10 m MGE D I VÖSÖW D0032MÖ S 1 3 RHM ? - ¿ / ¡g g T-S2-/3-2ST • FDD * Under Development Type Function Package Configuration No. of pins Features Reference Catalog May be fitted to 5V single power supply, or 5V/12V power supply. Built-in control logic for read and write circuits. TTL level read data output.
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D0032MÖ
V/12V
LFS24
QFPS56
QFPS80
QFPS100
Fdd spindle motor circuit
SLO 365 R
6476FP
3-phase motor drive
fdd motor driver
BA6485FP
A 3121 IC
D0032M
fdd spindle controller
64 pin motor drive
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HM65664A
Abstract: 65664A MATRA MHS HM* 28 pins SOIC pack
Text: IlM l DATA SHEET_ HM 65664A 8 Kx 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME INDUSTRIAL/COMMERCIAL: 25/35/45/55 NS MAX MILITARY: 30/35/45/55 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE : 175.0 mW (typ) STANDBY : 0.5 jiW (typ)
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5664A
bfl45b
5664A/Rev
HM65664A
65664A
MATRA MHS HM* 28 pins SOIC pack
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Untitled
Abstract: No abstract text available
Text: DIXYS High Power Diode Modules MDD220 IFRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM
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MDD220
220-08N1
220-12N1
220-14N1
220-16N1
4bflb22b
DDD35bM
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A1HV
Abstract: OQ11 SLTC
Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260
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16-bit
HY5118260
16-bit.
1A016-10-MAY94
GDD3543
HY5118260JC
HY5118260SLJC
A1HV
OQ11
SLTC
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Untitled
Abstract: No abstract text available
Text: 10 Amp Schottky Barrier Rectifiers MS1005, MS1006 — A— Dim. Inches 1 /* G T . i iTf e l i - J L—K -K — .415 .055 .185 .260 .605 .150 .120 .170 .570 .205 .025 .140 .342 .390 .050 .180 .248 .590 .145 .108 .163 .540 .200 .021 .125 .335 A B C D E F G
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MS1005,
MS1006
T0220A
D003241
C-121
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IL43 marking
Abstract: mb 3221 IL43 bit 3105 BTS 308 0314E irf 345h 2tu marking code BTS 716 G cj-cc
Text: P r e l im in a r y I n f o r m a t io n PMC PMC-Sierra, Inc. P M 63 44 EQUAD QUAD E1 FRAMER ISSUE 3 FEA TU RES • Integrates four full-featured E1 framers and transmitters in a single device for terminating duplex E1 signals. • Software and functionally compatible with the PM6341 E1XC Single E1
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PM6344
PM6341
PM4344
IL43 marking
mb 3221
IL43
bit 3105
BTS 308
0314E
irf 345h
2tu marking code
BTS 716 G
cj-cc
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D3254
Abstract: No abstract text available
Text: QS7024A PRELIMINARY High-Speed CMOS 4K x 16 Asynchronous Dual-Port RAM Q FEATURES QS7024A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 20/25/35/55 ns Industry standard pin-out Independent port access and control
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QS7024A
QS7024A
100-pin
84-pin
64Kbit
32-bit
MDSF-00024-00
D3254
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VMEbus
Abstract: VME64 termination VME System Controller CA91C042 pci to vme SCV64 vme 3u board standards VMEbus and Universe I MD32 REQ64
Text: Openbus Interface Components - Universe User Manual 2 Functional Description 2.1 Architectural Overview This section introduces the general architecture of the Universe. This description makes frequent reference to the functional block diagram provided in Figure 2.1 on page 2-2. Notice
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313-Pin
D33HD
CA91C042
DD03341
VMEbus
VME64 termination
VME System Controller
pci to vme
SCV64
vme 3u board standards
VMEbus and Universe I
MD32
REQ64
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rfd5
Abstract: ge 5d3
Text: 8908ZUIV/81S6UJV Am9518/ AmZ8068 Data Ciphering Processor DISTINCTIVE CHARACTERISTICS T h re e se p a ra te k e y re g ist e rs o n -ch ip Separate registers for encryption key, decryption key and m aster key improve system security and throughput by eliminating need to reload keys frequently.
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Am9518/
AmZ8068
F002250
Am9518/AmZ8068
74LS30
74LS90
------------------------------Am9S18
74LS30
rfd5
ge 5d3
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Untitled
Abstract: No abstract text available
Text: SIPEX CORP bOE D • 6203711 DDD32hb Ô51 « S P X W ir N A V « IIU W V V,KV“ V SP230A/234A/235A/236A SP237A/238A/239A/241A SP235B/236B/241B +5V Powered Multi-Channel RS232 Drivers/Receivers ^ Corpor«bwi^ SIGNAL PROCESSIN O EXCELLENCE FEATURES ■ ■
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DDD32hb
SP230A/234A/235A/236A
SP237A/238A/239A/241A
SP235B/236B/241B
RS232
SP239A)
RS232D
SP241A
SP239A
10V1O-10V
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EPM7160
Abstract: EPM7160 PLCC CN-TC01 H6062
Text: ALTERA CORP bfiE D • 05^5375 G003253 013 H A L T EPM7160 EPLD Features ^ □ □ □ □ □ High-density, erasable CMOS EPLD based on second-generation MAX architecture 3,200 usable gates Combinatorial speeds with tPD = 12 ns Counter frequencies up to 90.9 MHz
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G003253
EPM7160
84-pin
160-pin
Diagrams69
00032L2
EPM7160 PLCC
CN-TC01
H6062
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SO-8 LTLS e3
Abstract: ltls e3 IC LTLS E3
Text: M O S E L V TTE U C PRELIMINARY V52C8256 MULTIPORT VIDEO RAM WITH 256K X 8 DRAM AND 5 1 2 X 8 SAM HIGH PERFORMANCE V52C8256 Max. RAS Access Tim e, tRAC 60 70 80 60 ns 70 ns 80 ns Max. CA S Access Time, (tcAc) 15 ns 20 ns 25 ns Max. Column Address Access Tim e, ( t ^ )
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V52C8256
V52C8256
V52CB256
SO-8 LTLS e3
ltls e3
IC LTLS E3
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13k80
Abstract: No abstract text available
Text: SEUTECH CORP SflE D 0 1 3 * 1 ] . 3*1 100 WATT 8 AMP CONTINUOUS, 16 AMP PEAK 00032bS ISET Ö7D PMD 12K, 13K ABSOLUTE MAXIMUM RATINGS SYM BO L PARAMETER FEATURES Collector Emitter Voltage PM D12K, 13K80 PM D12K, 13K100 VcEO Collector Base Voltage PM D12K, 13KB0
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00032bS
13K80
13K100
13KB0
perfo10
0GD32bb
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