DARLINGTON 3A 50V NPN Search Results

DARLINGTON 3A 100V npn

Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601

of TIP122

Abstract: transistor tip120 TIP120 TIP121 TIP122
Contextual Info: Darlington Power Transistors NPN TIP120/121/122 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

NPN Transistor 8A

Abstract: DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A

tip120

Abstract: TIP122 TRANSISTOR tip122 transistor tip120 tip121 darlington NPN Transistor TO220 VCEO 80V 100V equivalent of TIP122 NPN Transistor VCEO 80V 100V DARLINGTON TIP121 tip120 darlington
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : TIP121 80 V : TIP122 Collector-Emitter Voltage : TIP120

TIP102

Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS

TIP102 Darlington transistor

Abstract: TIP100 TIP101 TIP102
Contextual Info: Darlington Power Transistors NPN TIP100/101/102 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage

NTE269

Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-

NTE262

Abstract: NTE261 DARLINGTON 3A 100V npn
Contextual Info: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.

nte268

Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

TIP102

Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

darlington power transistor 10a

Abstract: Darlington transistor to 92 power darlington DARLINGTON 3A 100V npn Darlington transistor TIP102
Contextual Info: TIP102 Power Darlington Transistors TO-220, General Purpose Feature: • NPN Plastic Power Darlington Transistors for Linear and Switching Applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum

darlington complementary power amplifier

Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

LB 122 transistor

Abstract: LB 122 NPN TRANSISTOR LB 122 NPN LB 121 NPN TRANSISTOR LB 127 transistor tip122 tip120 TIP 122 transistor TIP 122 transistor tip 122
Contextual Info: NPN EPITAXIAL DARLINGTON TRANSISTOR TIPI 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage : TIP120 Rating : TIP121 : TIP122 Collector-Emitter Voltag»

NPN Transistor 8A

Abstract: HP102 npn transistor 100v min npn 100v 1.5a DARLINGTON 3A 100V npn NPN Transistor 1A 100V
Contextual Info: NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP102 █ APPLICATIONS High Voltage switching.Motor driving. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R KSD560 TO-220 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol 150 V Collector-Emitter Voltage

TIP120

Abstract: TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS

Contextual Info: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220

Contextual Info: TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Equivalent Circuit C B TO-220 1 1.Base 2.Collector R1 3.Emitter R1 @ 8kW R2 @ 0.12k W Absolute Maximum Ratings* Symbol

equivalent of TIP122

Abstract: TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121
Contextual Info: Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP125/126/127 APPLICATIONS

TIP102

Abstract: TIP102 Darlington transistor TIP101 TIP100 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A
Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

Contextual Info: TIP100/TIP101/TIP102 NPN Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

equivalent of TIP122

Abstract: TIP122 TIP120 TIP121 equivalent transistor tip122 TRANSISTOR tip122 TIP120 equivalent equivalent of TIP121 OF TRANSISTOR tip122 datasheet of TIP122
Contextual Info: TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor • Medium Power Linear Switching Applications • Complementary to TIP125/126/127 Equivalent Circuit C B TO-220 1 1.Base 2.Collector R1 3.Emitter R1 @ 8kW R2 @ 0.12k W Absolute Maximum Ratings* Symbol