TIP100 Search Results

T1P102

Contextual Info: bH TEXAS I N S T R -COPTO} Ï Ë J Ö lbl7ab 896-1726 TEXAS INSTR OPTO 0D3bö7D □ 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS _ J A N U A R Y 1 9 7 7 - RE V ISE D OCTO BER 1 9 84 • Designed for Complementary Use with TIP105, TIP106, TIP107

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

Tip100

Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP100 TIP101 TIP102 NPN TIP105 TIP106 TIP107 PNP TO-220 Plastic Package Intended for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC

TLP100

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

Contextual Info: MCC TM Micro Commercial Components TIP100 TIP101 TIP102
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • • Mounting Torgue: 5 in-lbs Maximum Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • • High DC Current Gain : hFE=1000 @ VCE=4v, IC=3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use

TIP100

Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

tip B 631 k

Abstract: TIP100 TIP101 TIP102 TIP105 TIP106 TIP107 TIP107 central
Contextual Info: Datasheet Central TIP100 TIP101 TIPI02 NPN TIPI05 TIPI06 TIP107 PNP Semiconductor Corp. SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

TIP102G

Abstract: TIP102 TIP101 TIP105G TIP106 TIP100 TIP100G TIP101G TIP105 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN ; TIP105, TIP106, TIP107 (PNP) TIP101, TIP102, TIP106 and TIP107 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with TIP105, TIP106 and TIP107 TO-220 PACKAGE TOP VIEW ● 80 W at 25°C Case Temperature

TIP 102 transistor

Abstract: transistor tip 107 Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS

D 1878 TRANSISTOR

Contextual Info: TtP105, TIP106, TIP107 PNP SILICON POWER DARLINGTONS CopyrlaW 0 1997, Power Innovations Llmltsd. UK_ AU G U ST 1978 - R E V IS E D M A R C H 1997 • D esigned lo r Com plem entary U se with TIP100, TIP101 and TIP102

Contextual Info: TIP100, TIP101, TIP102 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE sat of 2.5 V at IC = 8 A TO-220 PACKAGE (TOP VIEW)

tip 102

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102

TIP105

Abstract: TIP106 TIP107
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

Contextual Info: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107

TIP100

Abstract: TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package TIP100, TIP101, TIP102 TIP105, TIP106, TIP107 Boca Semicondcutor Corp. BSC TIP100, 101, 102

tip 102

Abstract: Transistor tip 102
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS