DARLINGTON AMPLIFIERS Search Results

trasistor

Abstract: 2SB1465 NEC RELAY nec 5
Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

Contextual Info: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed

2SD1843

Abstract: diode dumper
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT: mm) dumper diode in collector to emitter and zener diode in collector to

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD336 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS

2SA1841

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10

SGSD200

Abstract: SGSD100
Contextual Info: SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: GENERAL PURPOSE SWITCHING APPLICATION ■ GENERAL PURPOSE AMPLIFIERS

SGSD100

Abstract: SGSD200
Contextual Info: SGSD100 SGSD200 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION APPLICATIONS: ■ GENERAL PURPOSE SWITCHING APPLICATION ■ GENERAL PURPOSE AMPLIFIERS

MJ11022

Abstract: marking code to3 diode 1N5825 MJ11021 MJ11021G MJ11022G MSD6100 darlington power transistor mj11021
Contextual Info: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY

MJ11021

Abstract: 1N5825 MJ11021G MJ11022 MJ11022G MSD6100 marking code to3 diode
Contextual Info: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY

Contextual Info: MJ11021 PNP MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. 15 AMPERE COMPLEMENTARY

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN

BDX53C

Abstract: BDX54C ST BDX53C BDX54B BDX53B st 393 JESD97
Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 ■ Audio amplifiers

Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 1 ■ Audio amplifiers

BDX53C

Abstract: BDX54C BDX53B BDX54B JESD97 ST BDX53C
Contextual Info: BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 1 ■ Audio amplifiers

MJ11021

Abstract: mj11011 MJ11017 MJ11018 MJ11019 MJ11020 MJ11022 transistor revers characteristic transistor MJ11020
Contextual Info: ÆàMOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS PNP NPN MJ11017 MJ11018 MJ11019 MJ11020 MJ11021 MJ11022 .designed for use as general purpose amplifiers,low frequency switching and motor control applications. FEATURES: * High Gain Darlington Performance

BDX87C

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR • ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ 1 2 DESCRIPTION The BDX87C is a silicon epitaxial-base NPN

NEC semiconductor

Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.

D39C2

Abstract: D39C3 D38L3 D38L1 D39C1 lBX1000 D38L1-6 D38L2 D39C1-6 complementary npn-pnp power transistors
Contextual Info: Silicon Transistors Complementary Darlington 123 D38L1-6 The General Electric D38L1-6 and D39C1-6 are Silicon Planar, Epi­ taxial, NPN-PNP complimentary Darlington amplifiers. These devices are designed for medium current-amplifier and switching applications.

NEC RELAY

Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Contextual Info: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)

IN5825

Abstract: MJF122 MSD6100 TIP122
Contextual Info: NPN MJF122 SILICON POWER DARLINGTON 6 AMPERES 100 VOLTS 30 WATTS SILICON POWER DARLINGTON FOR ISOLATED PACKAGE APPLICATION .designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically

Contextual Info: SGS-THOMSON RfflDSlñíOilLiSiriRiOiDtgi B D 336 SILICON PNP POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S i GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS

diode SOT-82 package

Abstract: BD336
Contextual Info: BD336 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP

MPSA25

Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C

diode SOT-82 package

Abstract: BD336 darlington bd
Contextual Info: BD336 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ DESCRIPTION The BD336 is a silicon epitaxial-base PNP