DARLINGTON TRANSISTOR MPSA14 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION

Contextual Info: DISCRETE SEMICONDUCTORS MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING

MPSA14

Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON
Contextual Info: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)

MPSA14

Abstract: MPSA64 SC-43A darlington transistor MPSA14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA

npn darlington

Abstract: MPS-A14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 24 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA

equivalent mpsa14

Abstract: MPSa14 equivalent MPSA14 transistor darlington
Contextual Info: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)

mpsa14

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 27 2003 Oct 22 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA

MPSA14

Abstract: transistor 625
Contextual Info: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)

MPSA14

Abstract: MPSA42 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2003 Oct 22 2004 Aug 20 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • Low current max. 100 mA

Contextual Info: DISCRETE SEMICONDUCTORS MPSA64 PNP Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING

Contextual Info: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS

ST 9336

Abstract: all transistor book Philips TO-92 MARKING CODE W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA

MPSA14

Abstract: MPSA64 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA

MPSA13

Abstract: MPSA14 MMBTA14 MMBTA13
Contextual Info: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for

MPSA14

Abstract: MPSA13 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington
Contextual Info: MPSA13 and MPSA14 ct u d ro P New Darlington Transistors NPN Collector Base TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for switching and amplifier applications. • High collector current

Contextual Info: MPSA14 SEM ICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR Collector-Rrntter Voltage : Vces=30V Collector Dissipation: Pc rnax =625mW ABSOLUTE MAXIMUM RATINGS a t Tam b=25'c Symbol Rating

MPS A13 transistor

Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
Contextual Info: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V

MPSA13

Abstract: MPS-A13 MPSA14
Contextual Info: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

MPSA13

Abstract: MPS-A13 MPSA14
Contextual Info: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

MPSA13

Abstract: MPS-A13 MPSA14
Contextual Info: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

MPSA13

Abstract: MPSA14 MPS-A13
Contextual Info: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

SILICON TRANSISTOR CORP

Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426
Contextual Info: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area

MPSA13

Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area