DATA SHEET OF NE555 Search Results

transistor SR 13001

Abstract: RCA SK CROSS-REFERENCE PCD8572I ATmel 730 24c04 SR 13001 transistor atmel 716 24c04 UNITRODE applications handbook uc3842 -96 all 89c51 microcontroller references book QFP44 footprint HI5618
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF5001 POCSAG Paging Decoder Product specification Supersedes data of 1995 Apr 27 File under Integrated Circuits, IC17 1997 Mar 04 Philips Semiconductors Product specification POCSAG Paging Decoder PCF5001 CONTENTS BLOCK DIAGRAMS

Panasonic R1766

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

ATC100A100JW

Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

ne5550

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm

Panasonic R1766

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

GRM21BB31

Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

ATC100A101JT

Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

NE555 signetics

Abstract: LND555 NE555
Contextual Info: DATA SHEET LND555 PRECISION TIMING CIRCUIT GENERAL DESCRIPTION The LND555 is a monolithic timing circuit capable of producing accurate time delays or oscillation. In the time delay mode of operation, the timed interval is controlled by a single external resistor and capacitor network. In the

lm555 texas

Contextual Info: OBSOLETE LM555JAN www.ti.com SNOSAQ8C – AUGUST 2005 – REVISED APRIL 2013 LM555JAN Timer Check for Samples: LM555JAN FEATURES APPLICATIONS • • • • • • • • • • 1 2 • • • • • Direct Replacement for SE555/NE555 Timing from Microseconds Through Hours

atc100a2r4b

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

Contextual Info: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

Contextual Info: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

74n7

Abstract: L1-L10 D2074 ne5550
Contextual Info: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

74n7

Abstract: R1766T
Contextual Info: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)

NE5550779A-T1

Abstract: sma 906
Contextual Info: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

R1766

Contextual Info: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

LQW18AN4R7NG00

Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Contextual Info: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0

LM555

Abstract: NE555V lm5555 SNAS548B LM555CMM LM555CMMX LM555CMX lm555 texas 100AV
Contextual Info: LM555 www.ti.com SNAS548B – MAY 2004 – REVISED JULY 2006 LM555 Timer Check for Samples: LM555 FEATURES APPLICATIONS • • • • • • • • • • 1 2 • • • • • • Direct replacement for SE555/NE555 Timing from microseconds through hours

Signetics NE555 Application note

Abstract: NE555 signetics A5T3644 NE555 SE555JG NE555D NE555P NE555PW SA555 SA555P
Contextual Info: NE555, SA555, SE555 PRECISION TIMERS SLFS022C – SEPTEMBER 1973 – REVISED FEBRUARY 2002 D D D D D NE555 . . . D, P, PS, OR PW PACKAGE SA555 . . . D OR P PACKAGE SE555 . . . D, JG, OR P PACKAGE TOP VIEW Timing From Microseconds to Hours Astable or Monostable Operation

Contextual Info: NE555, SA555, SE555 PRECISION TIMERS SLFS022E − SEPTEMBER 1973 − REVISED MARCH 2004 Timing From Microseconds to Hours Astable or Monostable Operation Adjustable Duty Cycle TTL-Compatible Output Can Sink or Source Up To 200 mA description/ordering information

NE555 frequency variation

Contextual Info: NE555, SA555, SE555 PRECISION TIMERS SLFS022D – SEPTEMBER 1973 – REVISED JUNE 2003 Timing From Microseconds to Hours Astable or Monostable Operation Adjustable Duty Cycle TTL-Compatible Output Can Sink or Source Up To 200 mA description/ordering information

N555 data sheet

Abstract: n555 NE555 NE555D NE555DR NE555P NE555PSR NE555PW NE555PWR SA555
Contextual Info: NE555, SA555, SE555 PRECISION TIMERS SLFS022E − SEPTEMBER 1973 − REVISED MARCH 2004 Timing From Microseconds to Hours Astable or Monostable Operation Adjustable Duty Cycle TTL-Compatible Output Can Sink or Source Up To 200 mA description/ordering information

N555 data sheet

Abstract: n555 NE555 frequency variation DATA SHEET OF NE555 NE555 applications NE555 PIN DIAGRAM NE555 as a monostable multivibrator NE555 datasheet Metal detector, gold OF NE555 NE555
Contextual Info: NE555, SA555, SE555 PRECISION TIMERS SLFS022D – SEPTEMBER 1973 – REVISED JUNE 2003 Timing From Microseconds to Hours Astable or Monostable Operation Adjustable Duty Cycle TTL-Compatible Output Can Sink or Source Up To 200 mA description/ordering information