DATASHEETS 140V NPN Search Results

DATASHEETS 140V NPN Result Highlights (5)

Part	Manufacturer	Description
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

DATASHEETS 140V NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BDY28B Abstract: BDY79 BDY54 IC-410 Contextual Info: Search Results Part number search for devices beginning "BDY25" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BDY25 NPN TO3 140V 6A 75 180 4/2 10MHz 85W	Original	BDY25" BDY25 BDY25A BDY25B BDY25C 10MHz BDY26" BDY28B BDY79 BDY54 IC-410	PDF
mj150* darlington Abstract: MJ15003 MJ15004 mj15004 NPN 250W Darlington NPN 250W mj15003 equivalent 250w npn MJ15003 Contextual Info: MJ15003 - NPN MJ15004 - PNP MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . FEATURES 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )	Original	MJ15003 MJ15004 500KHz mj150* darlington MJ15003 MJ15004 NPN 250W Darlington NPN 250W mj15003 equivalent 250w npn	PDF
mj15004 Contextual Info: MJ15003 - NPN MJ15004 - PNP SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . FEATURES 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )	Original	MJ15003 MJ15004	PDF
Contextual Info: BDY25C MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	BDY25C O204AA) 3001s,	PDF
BDY25A Abstract: 7595 Contextual Info: BDY25A MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	BDY25A O204AA) BDY25A 7595	PDF
Contextual Info: BDY25A MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	BDY25A O204AA) 3001s,	PDF
BDY25C Abstract: 7594 Contextual Info: BDY25C MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	BDY25C O204AA) BDY25C 7594	PDF
Contextual Info: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)	Original	2N2896	PDF
BDY25B Contextual Info: BDY25B MECHANICAL DATA HIGH CURRENT NPN SILICON TRANSISTOR Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 2 • • • 22.23 (0.875) max. 1 0.97 (0.060) 1.10 (0.043) 16.64 (0.655)	Original	BDY25B O204AA) BDY25B	PDF
semelab 2N6287 Abstract: 2N6300J 2n6278 to63 Contextual Info: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz	Original	2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63	PDF
Contextual Info: 2N2896 MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) NPN SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. FEATURES • NPN High Voltage Planar Transistor 2.54 (0.100)	Original	2N2896	PDF
transistor 559 Contextual Info: 2N2896CSM4 MECHANICAL DATA Dimensions in mm inches NPN SILICON TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)	Original	2N2896CSM4 transistor 559	PDF
Contextual Info: ^eml-donduckoi iPioaucti, Dna. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm (inches) 2N2896 (0.230), T51 (0.209)' NPN SILICON TRANSISTOR 4.95 (0.195) 4.52(0.178)	Original	2N2896 10vlTA 150mA,	PDF
2N3700 Abstract: LE17 Transistor 2N3700 Contextual Info: SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated	Original	2N3700 O-206AA) 2N3700 LE17 Transistor 2N3700	PDF

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO	Original	2N2896X 500mW O-206AA)	PDF
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO	Original	2N2896X 500mW 86mW/Â O-206AA)	PDF
2N3700CSM Abstract: LE17 Contextual Info: SILICON NPN TRANSISTOR 2N3700CSM • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N3700CSM 2N3700CSM LE17	PDF
Contextual Info: SILICON NPN TRANSISTOR 2N3700CSM • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N3700CSM	PDF
HIGH POWER NPN SILICON TRANSISTOR Abstract: STP5508 LE17 Contextual Info: HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage	Original	STP5508 O-204AE) HIGH POWER NPN SILICON TRANSISTOR STP5508 LE17	PDF
Contextual Info: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.	Original	2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)	PDF
Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N3019 800mW 57mW/Â O-205AD)	PDF
Contextual Info: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.	Original	2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)	PDF
Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N3019 800mW 57mW/Â O-205AD)	PDF
TRANSISTOR 3064 Abstract: TRANSISTOR 2N3019 2N3019 Contextual Info: NPN SILICON TRANSISTOR 2N3019 • High Voltage, High Current Small Signal NPN Transistor. • Hermetic TO-39 Metal Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated	Original	2N3019 800mW O-205AD) TRANSISTOR 3064 TRANSISTOR 2N3019 2N3019	PDF

DATASHEETS 140V NPN Search Results

DATASHEETS 140V NPN Result Highlights (5)

DATASHEETS 140V NPN Datasheets Context Search

BDY28B

mj150* darlington

mj15004

BDY25A

BDY25C

BDY25B

semelab 2N6287

transistor 559

2N3700

2N3700CSM

HIGH POWER NPN SILICON TRANSISTOR

TRANSISTOR 3064