stepper em 434
Abstract: pma 71xx PMA7107
Text: TargetDatasheet.book Page 1 Friday, August 22, 2008 5:27 PM Pr el i m i n ary D a t a S he et , V1 . 1, A ug us t 20 0 8 PMA71xx S m a r t L E W I S TM M C U RF T ra ns m it t er F S K / A S K 3 15 / 43 4/ 8 68 / 9 15 M Hz Em be dd ed 80 51 M icr oco ntr ol le r w i t h 1 0 b it A D C
|
Original
|
PDF
|
PMA71xx
PMA7110
PMA7105
PMA7106
PMA7107
PMA7110
PG-TSSOP-38
SP000450408
SP000450410
stepper em 434
pma 71xx
|
Untitled
Abstract: No abstract text available
Text: D a ta S h e e t , V0 . 8 , A u g . 2 0 0 3 H Y S 7 2T 64 0 0 0G R 512 MB yte H Y S 7 2T 12 8 0 00 G R ( 1 G B y t e) H Y S 7 2T 12 8 0 20 G R ( 1 G B y t e) H Y S 7 2T 25 6 0 22 G R ( 2 G B y t e) DD R 2 R egist ered D IMM Modu les Mem ory P ro duc ts N e v e r
|
Original
|
PDF
|
HYS72T64000GR,
HYS72T128020GR
HYS72T128000GR,
HYS72T256022GR
240-pin
PC2-3200R
/-4300R
/-5300R
128Mb
|
Untitled
Abstract: No abstract text available
Text: DIRECTIONAL COUPLERS 50 & 75Ω Coaxial 6 to 30 dB COUPLING 5 kHz to 2000 MHz ZADC - case CC51 ZADC - case F14 FREQ. RANGE MHz n ZADC-10-4-75 NEW n ZADC-20-18-75 MAINLINE LOSS dB DIRECTIVITY dB MJ fL-fU L U Nom. Flatness Typ.Max. Typ.Max. Typ.Max. 800-1000
|
Original
|
PDF
|
ZADC-10-4-75
ZADC-20-18-75
ZADC-10-10
ZADC-10-17
ZADC-10-17W
ZADC-20-10
ZADC-30-10
ZDC-10-1
ZDC-10-2
ZDC-15-2
|
Untitled
Abstract: No abstract text available
Text: NJG1127HB6 800MHz Band LNA GaAs MMIC GENERAL DESCRIPTION The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain
|
Original
|
PDF
|
NJG1127HB6
800MHz
NJG1127HB6
CDMA2000
11dBm
880MHz
|
STE22N80
Abstract: STH8N80 E81743
Text: STE22N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE22N80 800 V < 0.4 Ω 22 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH8N80 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER
|
Original
|
PDF
|
STE22N80
STH8N80
E81743)
STE22N80
E81743
|
Untitled
Abstract: No abstract text available
Text: Agilent HMMC-5021 2-22 GHz , HMMC-5022 (2-22 GHz), and HMMC-5026 (2-26.5 GHz) GaAs MMIC Traveling Wave Amplifier 1GG7-8000, 1GG7-8006, 1GG7-8007 Data Sheet Description The HMMC-5021/22/26 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and
|
Original
|
PDF
|
HMMC-5021
HMMC-5022
HMMC-5026
1GG7-8000,
1GG7-8006,
1GG7-8007
HMMC-5021/22/26
HMMC5021/22/26
5989-6205EN
|
Traveling Wave Amplifier
Abstract: TCA 810 1GG7 agilent HMMC 83040 hmmc5022
Text: Agilent HMMC-5021 2-22 GHz , HMMC-5022 (2-22 GHz), and HMMC-5026 (2-26.5 GHz) GaAs MMIC Traveling Wave Amplifier 1GG7-8000, 1GG7-8006, 1GG7-8007 Data Sheet Description The HMMC-5021/22/26 is a broadband GaAs MMIC traveling wave amplifier designed for high gain and
|
Original
|
PDF
|
HMMC-5021
HMMC-5022
HMMC-5026
1GG7-8000,
1GG7-8006,
1GG7-8007
HMMC-5021/22/26
HMMC5021/22/26
5989-6205EN
Traveling Wave Amplifier
TCA 810
1GG7
agilent HMMC
83040
hmmc5022
|
1gg7-8002
Abstract: 1gg7
Text: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:
|
Original
|
PDF
|
HMMC-5027
1GG7-8002
HMMC-5027
5989-6208EN
1gg7-8002
1gg7
|
1GG7
Abstract: 83040
Text: Agilent HMMC-5027 2-26.5 GHz Medium Power Amplifier 1GG7-8002 Data Sheet Features • Wide-frequency range: 2-26.5 GHz • Moderate gain: 7 dB • Gain flatness: ±1 dB • Return loss: Input: -13 dB, Output: -11 dB • Low-frequency operation capability:
|
Original
|
PDF
|
HMMC-5027
1GG7-8002
5989-6208EN
1GG7
83040
|
NJG1127HB6
Abstract: NJG1127HB6* design note NJG1127HB6* note HK1005
Text: NJG1127HB6 800MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION The NJG1127HB6 is a LNA IC designed for 800MHz band CDMA2000 cellular phone. This IC has LNA bypasses function, and high gain mode or low gain mode can be selected. High IIP3 and a low noise are achieved at the High gain
|
Original
|
PDF
|
NJG1127HB6
800MHz
NJG1127HB6
CDMA2000
11dBm
880MHz
NJG1127HB6* design note
NJG1127HB6* note
HK1005
|
guide gaas mmic distributed amplifier
Abstract: 1gg6 2686 0112 agilent HMMC Traveling Wave Amplifier
Text: Agilent HMMC-5025 2-50 GHz Distributed Amplifier 1GG6-8000 Data Sheet Features • Frequency Range: 2-50 GHz • Small Signal Gain: 8.5 dB • P-1 dB @ 40 GHz: 12 dBm • Noise Figure: 5 dB @ 2-35 GHz 7 dB @ 35-50 GHz • Return Loss: In/Out: <- 10 dB • 30 dB Gain Control
|
Original
|
PDF
|
HMMC-5025
1GG6-8000
5989-6207EN
guide gaas mmic distributed amplifier
1gg6
2686 0112
agilent HMMC
Traveling Wave Amplifier
|
H6NA80FI
Abstract: WNA80 6NA80 o247 STH6NA80FI STW6NA80
Text: STW6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST WNA80 ST H6NA80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 2.4 Ω < 2.4 Ω 5.4 A 3.4 A TYPICAL RDS(on) = 0.012 Ω AVALANCE RUGGED TECHNOLOGY
|
Original
|
PDF
|
STW6NA80
STH6NA80FI
WNA80
H6NA80FI
100oC
O-247
ISOWATT218
H6NA80FI
WNA80
6NA80
o247
STH6NA80FI
STW6NA80
|
NJG1127HB6
Abstract: HK1005
Text: NJG1127HB6 800MHz 帯低雑音増幅器 GaAs MMIC •概要 ■外形 NJG1127HB6 は 800MHz 帯 CDMA2000 携帯電話端末での使用 を主目的としたバイパス回路付き低雑音増幅器です。ロジック回路 を内蔵しており1 ビットのコントロール信号で High Gain モード
|
Original
|
PDF
|
NJG1127HB6
800MHz
CDMA2000
11dBm
880MHz
19dBm
NJG1127HB6
HK1005
|
FFP16
Abstract: FFP16-C1 GRM36 HK1005 NJG1312PC1
Text: NJG1312PC1 SPDT SWITCH DRIVER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1312PC1 is a GaAs MMIC mainly designed for CDMA 800MHz band cellular phone handsets. This Ic features low current consumption and variable gain. An ultra small & thin FFP package is adopted.
|
Original
|
PDF
|
NJG1312PC1
NJG1312PC1
800MHz
900MHz
10dBm
FFP16-C1
FFP16
FFP16-C1
GRM36
HK1005
|
|
Untitled
Abstract: No abstract text available
Text: _ Fro m: 2194774856 Page: 1/22 Date: 9/10/2004 2:30:07 PM OKAYA ELECTRIC AMERICA, INC503 WALLST., VALPARAISO IN 46383 TEL: 800-852-0122 FAX: 219-477^356 SPECIFICATIONS CUSTOMER : OKAYA A SAMPLE CODE (This Code will be changed while mass production)
|
OCR Scan
|
PDF
|
INC503
RC2004WRM-AWA-F
PT-A-005-4
Page22
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 4 TECHNOLOGY, INC. MT49V4M16 400 Mb/s/pin I | 1 SLDRAM li il IV I For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Very high speed: 400 MHz data rate • 800 M B /s peak 1 /O bandwidth provides very high
|
OCR Scan
|
PDF
|
MT49V4M16
|
UM91611
Abstract: T25610 UM91610
Text: UM O U M 91611 10 Memory Pulse Dialer ¡55 Features • Ten 18-digit number memories plus last number redial Independent select inputs for variation o f dialing rates 10PPS/20PPS , make/break ratio (33*/4:66% /4 0 :6 0), memory (22 digit) memory on chip inter-digit pause (400ms/800ms)
|
OCR Scan
|
PDF
|
18-digit
10PPS/20PPS)
400ms/800ms)
UM91611
M91611
pps/20
T25610
UM91610
|
dd 127 dd 127 d
Abstract: No abstract text available
Text: Rectifier Diode Modules Type V rrm I frmsm Ifsm V A VRSM = VRRM A 10 ms, + 100 V ^vjmax J i2dt A2s 10ms, •103 rT I fAVM^c V TO A/°C V mQ tvj = tij = ^vj max max RthJC RfhCK tvj max °c/w °C /W °C outline 180° el sin Baseplate = 20 mm DD 31 N 800.1600
|
OCR Scan
|
PDF
|
|
nf950
Abstract: LFA30 AWR8001 L68J
Text: AWR8001 E è î ÈQGKS' 800 MHz -1 GHz Receiver MMIC Data Sheet Rev 0 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES T o E x te rn a l Im a g e F ilte r Monolithic Down Converter Fro m E xte rn a l |m a g e F ilte r 2.5 dB Noise Figure 20 dB Conversion Gain
|
OCR Scan
|
PDF
|
AWR8001
033fJ
220nH
LFA30
015X45Â
nf950
AWR8001
L68J
|
Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - BROWN« [ DIR1700 ] PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE www.burr-brown.com/databook/DIR1700.html DIGITAL AUDIO INTERFACE RECEIVER STANDARD DIGITAL AUDIO INTERFACE RECEIVER (EIAJ1201)
|
OCR Scan
|
PDF
|
DIR1700
com/databook/DIR1700
EIAJ1201)
DIR1700
96kHz
256fs,
512fs
|
S25610
Abstract: Pulse Dialing in rotary phones S2560G S2560A
Text: •> GOULD A M I S e m ic o n d u c to rs S25610 □ Independent Select Inputs for Variation of Dialing Rates 10pps/20pps , Mark/Space Ratio (331/3 -662/31 40-60), Interdigit Pause (400ms/800ms). Features □ Complete Pin Compatibility With S2560A and S2560G Pulse Dialer Allowing Easy Upgrading of
|
OCR Scan
|
PDF
|
S25610
18-Digit
S25610
Pulse Dialing in rotary phones
S2560G
S2560A
|
ss 297 transistor
Abstract: MRFIC 917
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0904 900 MHz GaAs Two-Stage Driver Amplifier The MRFIC0904 is an integrated driver amplifier designed for class A/B operation in the 800 MHz to 1 GHz frequency range. The design utilizes Motorola’s Advanced GaAs FET process to yield superior performance and
|
OCR Scan
|
PDF
|
MRFIC0904
ss 297 transistor
MRFIC 917
|
SC24
Abstract: R30-R33 1536KHZ
Text: EPSON P F 800-02 SMC63A08 4-bit Single Chip Microcomputer • • • • 4-bit Low Cycle / Inst. Core CPU Built-in Dot-matrix Type LCD Driver Low Voltage Operation 0.9V Min. Built-in Gate Array I DESCRIPTION The SMC63A08 is a CMOS 4-bit microcomputer composed of a CMOS 4-bit core CPU, ROM, RAM, dot-matrix
|
OCR Scan
|
PDF
|
PF800-02
SMC63A08
SMC63A08
SC24
R30-R33
1536KHZ
|
LFA30-2A1E104M TE
Abstract: AWR8003
Text: A W R 8003 E ejtoigics 800 MHz -1 GHz Receiver MMIC AD VAN CED PRODUCT INFORMATION Rev 1 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES T o E x te rn a l Im a g e F ilte r Monolithic Down Converter F ro m E x te rn a l |m a g e F ilte r 3 dB Noise Figure
|
OCR Scan
|
PDF
|
LFA30
R8003
LFA30-2A1E104M TE
AWR8003
|