DD01S Search Results

t7055 pulse

Abstract: 270NR P04ZU TSM12 DD01S
Contextual Info: 9709955 UESTCODE WESTCODE 34C S EMI CONDUCT ORS DE I SEMICONDUCTORS c17D‘i ci S S 01516 d DD01Slt. T ^ Ö - f ~« \IIC A L WESTCODE $) SEMICONDUCTORS P U B L IC A T IO N TP042Q IS SU E 1 Ju n e , 1980 Inverter Grade Stud-Base Thyristor Type P 042Q 50 a m p e re s average: up to 800 volts VRRM

T-58-H

Contextual Info: SO LITRO N D EV IC ES INC b l 8 3 6 8 6 0 2 SOL ITRON D E V I C E S D E ^ fl3t.flfe.D2 DD01SD7 _ INC fl Ó1C | ~ 01507 D- T'' C V & f Z Z N ' T ITYP6 N°- dk'r. a _ /o / GROUP A A ND/OR PERFORMANCE CHARACTERISTICS NO. SYM BOL CCNOITIONS

Solitron Transistor

Contextual Info: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor

Contextual Info: UNITED MICROELECTRONICS BGE D ^32SflSa^DD01S4^5 — 1~-5 ^ - 3 3 - r2 I c n U M 8 2 C 2 1 2 Memory Controller1 Page interleaved mode access g an H H B s. Shadow R A M feature fo r BIOS execution Supports 100 ns D R A M s at 1 6 M H z and 80 ns D R A M O S /2 optim ization feature allows fast switching between

FRCT

Abstract: C54CM SPRU375 TMS320 SC 4340 SP0305 TMS320C54x fir filter applications AC05F
Contextual Info: TMS320C55x DSP Mnemonic Instruction Set Reference Guide Literature Number: SPRU374E April 2001 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

Contextual Info: 5 .0 " S in g le D ig it D is p la y FEATURES •5.0" digit height ■Right hand decimal point ■Choice of four colors/materials OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C FACE CO LO RS PEAK W AVE LENGTH (nm) P A R T NO. 567 M T N 2 1 5 1 -A G EM ITTED

HDB3 schematic

Abstract: VL80C75-PC
Contextual Info: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho

DAC with BCD input

Abstract: DAC with BCD inputs
Contextual Info: datel 47E inc D • 2b515bl 0QD1S73 21 D * ] > T L DAC-HZ Series " P S l - O V \ 712-Bit Hybrid Digital-to-Analog Converters FEATURES • 12-Bit binary • • • • 5 Output ranges 3 Microseconds settling time Internal reference and output amplifier High performance

EN3155 Cross Reference

Abstract: SOURIAU 8665 EN3155-003F2222 en3155 m39029 EN3155-014M2018 EN3545E en3155 EN3155-015F2018 8665-133 EN3155-008M2222
Contextual Info: souriau 8665 Series Description Applications • Rectangular connector • Sealed and unsealed versions • Rear removable crimp contacts sizes 22D, 20, 16 and 12 Basic rectangular connector used for air frame interconnection. Standards ASN-E 0390 Characteristics

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)

c2689

Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Contextual Info: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n

Contextual Info: DENSE-PAC 4 Megabit CMOS FLASH DPZ128X32VA/DPZ128X32VAP M I C R O S Y S T E M S DESCRIPTION: The DPZ128X32VA/VAP is a 4 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH memory devices. The D P Z 128X32VA/VAP can be user

Z89COO

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Z89C00 1 6 -B it D ig it a l S ig n a l p r o c e s s o r FEATURES • 16-Bit Single Cycle Instructions ■ 16-Bit I/O Port ■ Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM ■ 16-Bit Data ■ Three Vectored Interrupts

Contextual Info: SOLID STATE LED LAMPS INTEGRATED RESISTOR 5 VOLTS 12 VOLTS T-1 3mm RED AMBER GREEN SERIES 4 3 0 2 F -5 V , 4 3 0 2 F -1 2 V FEATURES OUTLINE DIMENSIONS • High brightness output • Integral current limiting resistor • TTL compatible requires no external current limiter with

Contextual Info: ADVANCED POW ER Te c h n o l o g y O D APT5040BNR APT5050BNR O S POWER MOS IVs SOOV 16.0A 0.40U 500V 14.0A 0.5012 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Symbol ^DSS All Ratings: T c = 25°C unless otherwise specified.

pa41

Contextual Info: APEX rilCROTECHNOLOGY CORP h?E » • ÜÔ7ûb3b DOD1SHÔ TIT ■ AfIT PA41/42 • PA41A/PA42A APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 3 0 0 546-A PEX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • • • MONOLITHIC MOS TECHNOLOGY

diode U3d

Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
Contextual Info: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: ICS1884 Integrated Circuit Systems, Inc. Advance Information SO NET/A TM Teleclock R e c o v e ry /G e n e ra to r Unit General Description Features The ICS1884 Teleclock is designed to provide high perform­ ance clock recovery and generation for either 51.84 Mbit/s

26C1000

Abstract: MX25C capacitor 330 1c6
Contextual Info: ¡ m i e MX26C1OOO 1 M-OFT [1 SSK X B CM OS MUL.T3PLJE-T1ME-I3ROGRAIV/IMABLE ROM FEA TU RES • • • • • • • • Standby current: 100hA 100 minimum erase/program cycles Package type: - 32 pin PDIP - 32 pin SO P - 32 pin PLCC - 32 pin TSOPii 128K x 8 organization

nand gate layout

Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
Contextual Info: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.

EQUIVALENT OF SR240

Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
Contextual Info: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier

M28750/10

Abstract: M28750/10-002W MIL STD 704 Nytronics Nytronics hi-g J-13 JPS10-1W JPS10-1Y Nytronics hi-g inc
Contextual Info: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n

nino relay

Abstract: RELAY RR 24V ac 12V dc TRANSISTOR ztx 105 3a circuit diagram tranzorb diode zener diode zg TRANSISTOR ztx 105 3a TIP 422 transistor RCA Solid State amplifier RSN 310 R 36 RU-20
Contextual Info: ERICSSON COMPONENTS INC ERICSSON $ IbE D • 3373bfl0 00014=12 1 ■ September 1989 T - 7 S - H - n PBL 3762 Subscriber Line Interface Circuit Description Key Features

JPS10-1W

Abstract: pfl 200 MIL-R-28750 J-13 relay hi-g inc
Contextual Info: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n