DD401 Search Results

DD-561

Abstract: MALLORY 150 CAPACITORS capacitor 1000 MF 25v 4700 mf 100v MALLORY CAPACITORS cgs series Mallory Start Capacitors DDM-103 capacitor 200V 820 MF DD330 3300 mf 35v
Contextual Info: 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 CAP ACIT ORS CAPACIT ACITORS 1234567890123456789012345 RADIAL PC LEAD ALUMINUM ELECTROLYTIC CAPS 85° C 20% tolerance Volts Capacitance (mF) 10v 330, 470, 1000, 1200, 2200, 3300, 6800 mF

NDT452P

Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

DIN 74 - Bm5

Abstract: sandisk eMMC SLIMbus sandisk emmc 4.5 dk 2482 h transistor sandisk eMMC 4.41 OMAP4470 lpddr2 pcb design MIPI CSI design guideline OMAP 4470
Contextual Info: OMAP OMAP4470 Multimedia Device Engineering Sample ES1.0 Version A Data Manual Public Version PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

Contextual Info: MITSUBISHI LSIs Som e contents are subject to change without notice. MH8S64BALD -7,-8, -10 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64BALD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight industry standard 8Mx8 Synchronous DRAMs in

DD3020

Abstract: DD330 DD152 D103M59Z5UNABEM D102K29X5FLAAEC CE472 D750M D330K29S2LNAAAL D103M DD-221
Contextual Info: Ceramic Capacitors Series D and S 50VDC through 6KVDC, EIA Class I, II and III, General Purpose and Temperature Stable Ceramic Disc Capacitors Description: • See figures 1 and 2 for part number code for OEM and distributor

74LS

Abstract: CD4015BC CD4015BM 18VQC
Contextual Info: CD4015BM/CD4015BC i/W \ National m!m Semiconductor CD4015BM/CD4015BC DUAL 4-BIT Static Shift Register General Description fan ou t o f 2 d rivin g 74L or 1 driving 74LS Low pow er TTL c o m p a tib ility The CD4015BM/CD4015BC c o n ta in s tw o id e n tic a l,

P-8388

Contextual Info: MITSUBISHI LSIs P R E L IM IN A R ^ ^ . ± nt Ä c U o % a n ge. M5M29KB/T800AVP 8,388,608-BIT 1048,576-WORD BY 8-BIT 1524,288-WORD BY16-BIT CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29KB/T800AVP Is 5.0V-only high speed 8,388,608-bit CMOS boot block Flash Memories with

M0144

Abstract: L04A NDT3055 gstm
Contextual Info: e* June 1 996 N a t i on a l Semiconductor ” NDT3055 N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancem ent m od e p o w e r fie ld effect tran sisto rs are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y.

L65A

Abstract: SSF10N90A FI-80 717 MOSFET 74142
Contextual Info: SSF10N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 6.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

XC 68 HC 58

Contextual Info: Data Sheet August 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations TEC03264 32-Channel Echo Canceller F e a tu re s Applications O v e ra ll D e v ic e • ■ ■ ■ ■ Dual-convergence voiceband echo canceller EC .

a1t diode

Contextual Info: Advanced Power MOSFET S F W FEATURES • ■ ■ ■ ■ ■ /I9 6 4 4 BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10jiA M ax. @ VOS= -250V

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

dd3020

Abstract: D241K 104 z5f 104 z5f capacitor DD102 DD-561 DD30-102 CE472 D201K DD30-472
Contextual Info: PHILIPS Series D and S General Purpose Ceramic Disc Capacitors Features • Single Layer Construction • General Purpose and Temperature Compensating Capacitors Available • High Voltages Available Part Number Electrical Parameters • See T able 1 Capacitance Range:

FS450R12KE3 S1

Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Contextual Info: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.

BSM25GP120 b2

Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:33 Uhr Seite 7 EasyPIM 600 V-1200 V Type VCES V Low Loss 2. Generation ◆ FB6R06VL4 ◆ FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G_B1 FP10R06KL4 FP10R06KL4_B3 FB15R06KL4 FB15R06KL4_B1 FP15R06KL4 FB20R06KL4 FB20R06KL4_B1

sandisk emmc 4.5

Abstract: SLIMbus OMAP4 OMAP4460 Sandisk emmc sandisk eMMC 4.41 MIPI csi2 omap4 csi2 toshiba emmc 4.4.1 spec digital microphone slimbus
Contextual Info: OMAP OMAP4460 Multimedia Device Engineering Sample ES1.0 ES1.1 Version A Data Manual Public Version PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not

104 z5f capacitor

Abstract: D203Z69Z5ULABED D501K29Z5FNAAEM z5v cap D101M33Z5URAAEM Dd502 dd181 DD6-103 d432m D121K29S3NNAAAL
Contextual Info: SERIES D AND S i — i 50VDC through 6KVDC, EIA Class I, II and III, General Purpose and Temperature Stable, Ceramic Disc Capacitors Ceramic Capacitors DESCRIPTION: Our General Purpose and Temperature Stable capacitors are available with DC Voltage ratings