DD42B Search Results

4N500

Abstract: IC 741 cn
Contextual Info: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N

Contextual Info: Low Power, Programmable Temperature Controller TMP01* ANALOG DEVICES FEATURES -55°C to +125°C {—67°F to +257°F Operation ±0.5°C Accuracy Over Temperature typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis

Contextual Info: ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM

IC MARKING A60

Abstract: IC 741 cn
Contextual Info: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM

LE347

Abstract: toba Q 0265 R HS 8180 42S18180
Contextual Info: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N

TSE 4041

Abstract: ADSP-21msp56a PGA300 msp50 ADSP-21msp55A ADSP-21msp50 001C 27C64 80C51 HA20
Contextual Info: ► ANALOG DEVICES Mixed-Signal Processor with Host Interface Port ADSP-21 msp50A/55A/56A FEATURES 77 ns Instruction Cycle Time from 13.00 MHz Crystal ADSP-2100 Family Code & Function Compatible 2K Words of On-Chip Program Memory RAM 1K Words of On-Chip Data Memory RAM

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT F/ iPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE a DESCRIPTION The /¿PD42S16400L, 4216400L, 42S17400L, 4217400L are 4 194 304 words by 4 bits dynamic CMOS RAMs.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT M>D42S16800,4216800,42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION ★ The MPD42S16800, 4216800, 42S17800, 4217800 are 2 097 152 words by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the //PD42S16800, 42S17800 can execute CAS before RAS self refresh.

D78C10

Abstract: D78C10A PD78C14 PD78C10A PBYC D78C14AG-XXX-AB d78c14ag PD78C10ACW AGQ-36 AGQ-XXX-36
Contextual Info: [□427525 0042b4T |\|EC NEC Electronics Inc. T14 • NECE JUPD78C14 Family iiPD78C10A/C11A/C12A/C14/C14A/CP14 8 ' Bit’ Single-Chip Microcontrollers With A/D Converter Septem ber 1993 Description Features This fam ily of m icrocontrollers integrates sophisti­

D4242

Abstract: IC 741 cn
Contextual Info: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and

Contextual Info: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT riuPD42S16800L#4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION * The iiPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 words by 8 bits dynamic CMOS RAMs.

Contextual Info: hSE 1 □ □ 42b3b m 5T7 « H I T S A D E - 2 0 4 - 0 1 8 A Z HA16117F Series Low Power Supervisor ICs for Microprocessor System H IT A C H I oecR^ HITACHI/ <HCU/t1PU> Preliminary Description Features The HA16117F Series of ICs make a m icro­ processor (MPU) system fail-safe by monitoring

m2137

Contextual Info: b427525 Q0I4212,:Ì bll M N E C E MOS INTEGRATED CIRCUIT /¿PD4 2 S 1 6 1 0 0 ,4 2 S 1 7 1 0 0 a 16 M BIT D Y N A M IC RAM FAST PAGE M O DE P R E L I M I N A R Y -DESCRIPTIO N The NEC //PD42S16100 and /¿PD42S17100 are 16 777 216 words by 1 bit dynamic CMOS RAM with

G0451L

Contextual Info: t»427525 OQMSltib «NECE MOS INTEGRATED CIRCUIT / / P D 4 2 S 1 6 4 0 0 , 4 2 S 1 7 4 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M O DE - P R E L IM IN A R Y -DESCR IPTIO N The NEC #PD42S16400 and // PD42SI7400 are 4 194 304 words by 4 b it s dynamic CMOS RAM

g0424

Abstract: transistor B42 350
Contextual Info: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic

LA80P

Abstract: marking 80L
Contextual Info: b427525 0042407 Tbb « N E C E MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 L , 4 2 S 1 7 1 8 0 L , 4 2 S 1 8 1 8 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE & BYTE R E A D /W R IT E M O DE -PRELIMINARY-DESCRIPTION The NEC ^PD42S16180L, u PD42S17180L and n PD42S18170L are 1 048 576 words by 18 b its

Contextual Info: bM27525 0042205 O ti HNECE MOS INTEGRATED CIR CU IT ¿ ¿ P D 4 2 S 1 6 8 0 0 ,4 2 S 1 7 8 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M ODE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16800 and /¿PD42S17800 are 2 097 152 words by 8 b it s dynamic CMOS RAM w ith o p tio n a l fa s t page mode.

Contextual Info: b427525 0042323 TbS » N E C E f MOS INTEGRATED C IR CU IT H / P D 4 2 S 1 6 1 6 L , 4 2 S 1 7 1 6 L , 4 2 S 1 8 1 6 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE -P R E L IM IN A R Y -D ESCRIPTIO N

IC MARKING A60

Abstract: 7KD MARKING marking B44
Contextual Info: b42752S 00421flb 3fi7 M N E C E MOS INTEGRATED CIRCUIT /¿PD42 S 16400 L, 42 S 17400 L 16 M B IT D Y N A M IC RA M 3 .3 V F A S T P A G E M O D E PRELIM IN ARY IDESCRIPTIO N The NEC u PD42S16400L and u PD42S17400L are 4 194 304 words by 4 b its dynamic CMOS RAM

KF50

Contextual Info: b427525 D0H2243 c172 « N E Œ MOS INTEGRATED CIRCUIT , u P D 4 2 S 1 6 9 0 0 , 4 2 S 1 7 9 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M O DE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16900 and ¿¿PD42S17900 are 2 097 152 words by 9 b its dynamic CMOS RAM with optional fa s t page mode. CMOS sense anpl i f ier, peripheral c ir c u it s and 1 tra n s is to r

Contextual Info: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.

PD42S

Contextual Info: b427525 GQ4HSbT TEI « N E C E MOS INTEGRATED CIRCUIT jtiP D 4 2 S 1 6 1 9 0 L , 4 2 S 1 7 1 9 0 L , 4 2 S 1 8 1 9 0 L 16 M B IT D Y N A M IC RA M 3 .3 V FA ST P A G E M O D E & B Y T E W R IT E M O D E P R E LIM IN A R Y -D E S C R IP T IO N The NEC n PD42S16190L. ^ PD42S17190L and // PD42S18190L a re 1 048 576 words by 18 b i t s

CA723CE

Abstract: CA723CE equivalent schematic diagram 12V to 3V dc voltage regulator voltage regulator IC 723 CA723ct MA723C 6.2V Zener Diode CA723 DIP CA723T equivalent component of mA723
Contextual Info: HARRIS f i l U U S E I U C ON D H A R SbE SECTOR R D • M3Q5271 GD42b?4 23T « H A S CA723 CA723C IS S E M I C O N D U C T O R Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA Without External Pass Transistors May 1992 7 ^ 5 S - / / '- 2 3