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    ADLINK Technology Inc DDR3 1333 204P 8GB

    DDR3 1333 PC3-10600 204P 8GB - Bulk (Alt: DDR3 1333 204P 8GB)
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    ADLINK Technology Inc DDR3 1333 204P 1GB

    TS128MSK64V3U/TW DDR3 1333 PC3-10600 204P 1GB UNBUFFERED,USI - Bulk (Alt: DDR3 1333 204P 1GB)
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    Avnet Americas DDR3 1333 204P 1GB Bulk 13 Weeks 1
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    ADLINK Technology Inc DDR3 1333 204P 8GB W/ECC(EA)

    DDR3 1333 204P 8GB W/ECC(EA) - Bulk (Alt: DDR3 1333 204P 8GB)
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    ADLINK Technology Inc DDR3 1333 204P 2GB

    ADK #29-68200-7410 TS256MSK64V3N/TW DDR3 1333 PC3-10600 204 - Bulk (Alt: DDR3 1333 204P 2GB)
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    Avnet Americas DDR3 1333 204P 2GB Bulk 5 Weeks 1
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    DDR31333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR1333D3D8R9S/2GI 2GB 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR3-1333 CL9 SDRAM (Synchronous DRAM), (Intel Compatibility Tested), registered w/parity, dual-rank memory module, based on eighteen 128M x 8-bit DDR31333 FBGA components. The SPD is programmed to JEDEC standard latency 1333Mhz timing of 9-9-9 at 1.5V. This


    Original     		PDF KVR1333D3D8R9S/2GI 72-Bit PC3-10600 240-Pin 2048MB) DDR3-1333 DDR31333 1333Mhz

    SBI Temperature Sensor Interface SB-TSI

    Abstract: APIC21 Northbridge MSRC001 htc one s mobile MOTHERBOARD CIRCUIT diagram ea517 E1000 intel gigabit driver hdmi dvi verilog deep color 6880H SBI Temperature Sensor Interface SB-TSI Specification,
    Text: 43170 Rev 3.13 - February 17, 2012 BKDG for AMD Family 14h Models 00h-0Fh Processors Cover page BIOS and Kernel Developer’s Guide BKDG for AMD Family 14h Models 00h-0Fh Processors Advanced Micro Devices 1 43170 Rev 3.13 - February 17, 2012 BKDG for AMD Family 14h Models 00h-0Fh Processors


    Original     		PDF 00h-0Fh SBI Temperature Sensor Interface SB-TSI APIC21 Northbridge MSRC001 htc one s mobile MOTHERBOARD CIRCUIT diagram ea517 E1000 intel gigabit driver hdmi dvi verilog deep color 6880H SBI Temperature Sensor Interface SB-TSI Specification,

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    Untitled

    Abstract: No abstract text available
    Text: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual


    Original     		PDF 240-Pin MT18KDF51272PDZ 240-pin, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83aa70c0 kdf18c512x72pdz

    Untitled

    Abstract: No abstract text available
    Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz

    Untitled

    Abstract: No abstract text available
    Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:


    Original     		PDF M2S1G64CBH4B5P M2S2G64CB88B5N M2S4G64CB8HB5N PC3-8500 PC3-10600 PC3-12800 DDR3-1066/1333/1600 128Mx16 256Mx8

    NT1GC72B89A0NF

    Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
    Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency


    Original     		PDF NT1GC72B89A0NF NT2GC72B8PA0NF NT1GC72B89A1NF NT2GC72B8PA1NF PC3-8500 PC3-10600 DDR3-1066/1333 128Mx8 PC3-8500 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600

    TE32882E

    Abstract: DDR3 DIMM pinout TE32882 DDR3 pcb layout DDR3 sdram pcb layout guidelines SSTE32882 dimm pcb layout DDR3 DIMM 240 pinout
    Text: SN74SSQE32882 www.ti.com . SCAS857A – MARCH 2008 – REVISED OCTOBER 2008 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS PARITY TEST


    Original     		PDF SN74SSQE32882 SCAS857A 28-BIT 56-BIT SSTE32882 TE32882E DDR3 DIMM pinout TE32882 DDR3 pcb layout DDR3 sdram pcb layout guidelines dimm pcb layout DDR3 DIMM 240 pinout

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of


    Original     		PDF VL41D1G63B-K0/K9/F8S 1Gx72 204-PIN VL41D1G63B 512Mx8 204-pin 204-pin,

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered


    Original     		PDF VL33B1K68F-K0/K9/F8/E7S 1Gx72 240-PIN VL33B1K68F 28-bit 240-pin 240-pin,

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists


    Original     		PDF VL41D5763B-K0/K9/F8S 256Mx72 204-PIN VL41D5763B 256Mx8 204-pin 204-pin,

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GU6KB

    IMSH1GS14A1F1C

    Abstract: 03A1F1C IMSH2GS13A1F1C-10F pc3.10F
    Text: December 2008 IMSH1GS14A1F1C T IMSH2GS13A1F1C(T) 204-Pin Small-Outlined Dual-In-Line Memory Modules 1-GByte and 2-GByte DDR3 SDRAM EU RoHS compliant Advance Internet Data Sheet Rev. 0.65 Advance Internet Data Sheet IMSH[1G/2G]S1[3/4]A1F1C(T) DDR3 SO-DIMM Modules


    Original     		PDF IMSH1GS14A1F1C IMSH2GS13A1F1C 204-Pin 08D/08E] IMSH2GS13A1F1CT16H. 03A1F1C IMSH2GS13A1F1C-10F pc3.10F

    DDR3 ECC SODIMM

    Abstract: e500mc freescale P4040
    Text: COMX-P4040 & COMX-P4080 High Performance Freescale QorIQ Modules PRELIMINARY DATA SHEET COM Express based modules with QorIQ™ processing power for rapid deployment across diverse I/O requirements nn Freescale QorIQ P4040 and P4080 processors nn Four or eight Power Architecture cores running at 1.5 GHz


    Original     		PDF COMX-P4040 COMX-P4080 P4040 P4080 DDR3-1333 COMX-P4040 COMX-P4080 COMXP4080-D4 DDR3 ECC SODIMM e500mc freescale P4040

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


    Original     		PDF EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GG6KB W632GG6KB15I

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866

    W3J512M32G

    Abstract: M41K256M32
    Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX