DESIGN POWER AMPLIFIER FOR GPS Search Results

202378A

Contextual Info: APPLICATION NOTE Output Filter Design for EMI Rejection of the AAT5101 Class D Audio Amplifier The AAT5101 is a high efficiency, 2.5W mono class D audio power amplifier. It can be used in portable devices, such as MP4s, cell phones, laptops, GPS and PDAs. The device can work as a filterless class D amplifier that can operate with

ELECTRO MAGNETIC INTERFERENCE CONTROL TECHNIQUES

Abstract: CLASS D AUDIO AMPLIFIER AAT5101 audio amplifier pcb layout emi rejection bead filter AN-131 CLASS D Ferrite Bead anten switch
Contextual Info: APPLICATION NOTE AN-131 AAT5101: Output Filter Design for Class D Audio Amplifier EMI Rejection The AAT5101 is a high efficiency, 2.5W mono class D audio power amplifier. It can be used in portable devices, such as MP4s, cell phones, laptops, GPS and PDAs. The device can work as a filterless class D amplifier that can operate with

Contextual Info: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,

UMK325C7106MMT

Contextual Info: PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package

atc100B100GT500XT

Abstract: MRF21010 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LSR1 T491D106K035AT Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN RF Power Field Effect Transistor MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

CRCW08051001FKEA

Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

low frequency automatic gain control

Abstract: TQ7641
Contextual Info: RF Wireless Products 1850 – 1910 MHz High-Efficiency 3 Volt PCS Power Amplifier The TQ7641 is packaged in a small, low-cost, power TSSOP-20 plastic package. The part is designed to require minimal external circuitry for matching and bias, simplifying design and

J499

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for

Contextual Info: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency

Contextual Info: PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency

Contextual Info: PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 – 2690 MHz Description The PXAC261002FC is a 100-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features

Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features

Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features

Contextual Info: PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features

Contextual Info: PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features

Contextual Info: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,

Contextual Info: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design,

Contextual Info: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

ofdm predistortion

Abstract: CGH21120 transistors cross reference cgh40120F Digital Transistors Cross Reference CGH25120F RF power transistors cross reference GaN on SiC HEMT Pulsed Power Transistor Peak digital Pre-distortion Gan hemt transistor
Contextual Info: May 2009 Short range wireless UWB GPS and satellite  GaN HEMT transistors Advances in high power GaN HEMT transistors By Simon Wood, Carl Platis, Don Farrell, Brad Millon, Bill Pribble, Peter Smith, Ray Pengelly, and Jim Milligan, Cree Inc. G allium nitride (GaN) HEMT based

bandpass filter for GPS L1 front end

Abstract: design bandpass filter for GPS radar match filter design TUNABLE FILTER Tunable-bandpass-filter bandpass filter for GPS gps transponder gps lna gps filter l1
Contextual Info: Filtered Low Noise GPS Amplifier Spectrum Microwave, Inc Walter E. Gordon CTO Summary A new GPS low noise amplifier has been developed which offers the user performance flexibility in amplifying either L1 1575 MHz or L1 and L2 (1227 MHz) GPS signals. Through the use of modular assembly and model-specific

4G base station power amplifier

Abstract: lna 2.5 GHZ s parameter ads design FR4 dielectric constant 4.6 matching with smith chart common base amplifier circuit designing GaAs 0.15 pHEMT VT-47 Simulation of 3 phase common mode choke
Contextual Info: WHITE PAPER Ultra-Low Noise Figure, High Gain Amplifier with High Linearity Introduction Infrastructure receiver applications for cellular/3G, ISM, GPS, WiMAX/4G, automotive applications, and satellite radio require Low-Noise Amplifiers LNAs with very low Noise Figures (NF),

MJ15003 300 watts amplifier

Abstract: NCP1337 MJE15035 mj15024 MJ*15033 NJL0281D NJL1302D MJ15024-MJ15025 mjl4281 spdt sot363 rf
Contextual Info: A high-quality audio experience is becoming more important in a wide variety of different end products and ON Semiconductor has and is continuing to develop solutions to address a diverse set of customers’ problems, be it in a portable GPS receiver, a digital music player, or a professional audio

Contextual Info: PRELIMINARY DATA SHEET SKY65088: 1.575 GHz GPS Low Noise Amplifier Applications VBIAS ENABLE VCC x GPS radio receivers Bias/Control Features x Small signal gain: 16 dB x Low Noise Figure: 1.0 dB x IIP3: 0 dBm x Minimal number of external components required