PXAC261202FC Search Results
PXAC261202FC Price and Stock
Infineon Technologies AG PXAC261202FCV1XWSA1RF MOSFET LDMOS 28V H-37248-4 |
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PXAC261202FCV1XWSA1 | Tray |
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Infineon Technologies AG PXAC261202FCV1R250XTMA1RF MOSFET LDMOS 28V H-37248-4 |
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PXAC261202FCV1R250XTMA1 | Reel |
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PXAC261202FC Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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| PXAC261202FCV1R250XTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 2.61GHZ | Original | 218.37KB | ||||
| PXAC261202FCV1S250XTMA1 |
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FET RF 2CH 65V 2.61GHZ | Original | 377.62KB | 3 | |||
| PXAC261202FCV1XWSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 2.61GHZ | Original | 218.37KB |
PXAC261202FC Datasheets Context Search
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Contextual Info: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, |
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PXAC261202FC PXAC261202FC 120-watt | |
PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
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PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA |