DIODE 16A 100V Search Results

Contextual Info: SBR160-10J Ordering number : ENN8396 SBR160-10J Schottky Barrier Diode Twin Type • Cathode Common 100V, 16A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low reverse current.

SBR160-10J

Contextual Info: SBR160-10J Ordering number : ENN8396 SBR160-10J Schottky Barrier Diode Twin Type • Cathode Common 100V, 16A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Low reverse current.

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings

IXTP450P2

Abstract: IXTH450P2 IXTQ450P2
Contextual Info: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings

Contextual Info: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFA16N50P IXFP16N50P IXFH16N50P = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions

IXFH16N50P

Abstract: IXFA16N50P IXFP16N50P Z 728
Contextual Info: IXFA16N50P IXFP16N50P IXFH16N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions

IF110

Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1
Contextual Info: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXFH16N120

Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
Contextual Info: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

16N50

Abstract: 16N50P IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation
Contextual Info: IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS

IXFH16N120

Contextual Info: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTH450P2

Abstract: IXTP450P2 to-247 to-220 to-3p IXTQ450P2 DS100241A
Contextual Info: IXTP450P2 IXTQ450P2 IXTH450P2 Polar2TM Power MOSFETs VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: Polar2TM Power MOSFETs VDSS ID25 IXTP450P2 IXTQ450P2 IXTH450P2 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXFH16N120P

Contextual Info: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH16N60C2D1

Abstract: IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1
Contextual Info: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH16N60B2D1

Abstract: IXGP16N60B2D1
Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 1.95V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH16N60B2

Abstract: 16N60 IXGH16N60B2D1 C3519 16N60B IF110 IXGA16N60B2D1 IXGP16N60B2D1
Contextual Info: HiPerFASTTM IGBTs B2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 600V 16A 2.3V 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

APT15F60B

Abstract: APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

zvs flyback driver

Abstract: APT15F60B APT15F60S MIC4452
Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

Contextual Info: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

IRFY140C

Abstract: IRFY140CM
Contextual Info: PD - 91287C POWER MOSFET THRU-HOLE TO-257AA IRFY140C,IRFY140CM 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY140C 0.077 Ω 16*A Ceramic IRFY140CM 0.077 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International

IRF540NPBF

Abstract: IRF1010 94812 4.5v to 100v input regulator
Contextual Info: PD - 94812 IRF540NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94185 POWER MOSFET THRU-HOLE TO-257AA IRFY140,IRFY140M 100V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY140 0.077 Ω 16*A Glass IRFY140M 0.077 Ω 16*A Glass HEXFET® MOSFET technology is the key to International