DIODE 1N3070 Search Results

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

1N3070

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 ]> 05D433A 0DG37T1 3 • T -9 1 -0 1 PROCESS TSO Process TSO High-Speed Switching Diode P ro ce ss T S O produces a gold-doped silicon epi­ taxial diode with 1N3070 high-speed sw itching char­ acteristics. It has a typical breakdow n-voltage rating

Sprague 1N3600

Abstract: diode R 360 BL diode a13 TND907 diode arrays tnd903 A1090 sprague TND 16-pin a plastic package
Contextual Info: ÛS13ÛS0 SPRAGUE/SEM ICOND GROUP 8 5 1 4 0 1 9 S P RA GU E. S E M I C O N D S / ICS 0003Ö05 □ SERIES TND DIODE ARRAYS SERIES TND DIODE ARRAYS rT ,he TND series consists o f diode arrays packaged •*- in 14-pin and 16-pin dual in-line plastic pack­ ages for easy automatic insertion and better printed

1N3070

Abstract: CMPD2003 CMPD2004 CPD60
Contextual Info: PROCESS Central CPD60 Switching Diode TM Semiconductor Corp. High Voltage Switching Diode Chip PROCESS DETAILS PROCESS DIE SIZE EPITAXIAL PLANAR DIE THICKNESS ANODE BONDING PAD AREA 8.0 MILS TOP SIDE METALIZATION BACK SIDE METALIZATION Al - 15,000Å 17.5 x 17.5 MILS

DIODE 1N3070

Abstract: 1N3070 CMPD2003 CMPD2004 CPD60 1N3070 DIODE
Contextual Info: PROCESS CPD60 Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 15,000Å Back Side Metalization Au - 6,000Å

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

1N3070

Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å

C 704 diode

Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

1N3070

Abstract: CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80
Contextual Info: Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

d918

Abstract: D938 TND903 TND907
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

CMOD2004

Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

tnd903

Abstract: Allegro MicroSystems tnd 903 diode
Contextual Info: ALLEGRO MICROSYSTEMS INC 0S0433Ö OODbMDG QS3 • ALCR SERIES TND 'T - ^ V Z ^ f m DIODE ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density.

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

DIODE 1N3070

Abstract: 1N307 1N3070 JANTX 1N3070-1
Contextual Info: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

TND903

Abstract: TND907 TND908 1N4447 1N3070 1N3595 1N3800 1N4153 TND918 TND921
Contextual Info: I n te r n a tio n a l TND903 thru TND942 S e m ic o n d u c to r , I n c . DIODE ARRAYS — II 6\ - - The TND series of diode arrays are packaged in 14 and 16 pin d u al-in-line p la s tic packages fo r easy autom atic insertion and better

IN3070

Abstract: 1N3070 IN3070 diode DIODE 1N3070
Contextual Info: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C

DIODE 1N3070

Abstract: 1N3070 high voltage diode 1N3070 DIODE 1N3070 DIODE DATASHEET MMBD1401
Contextual Info: 1N3070 1N3070 DO-35 General Purpose High Voltage Diode Sourced from Process 1J. See MMBD1401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 200 V IO Average Rectified Current

Contextual Info: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:

1N3070

Abstract: DIODE 1N3070
Contextual Info: 1N3070 High Speed High Conductance Diode. Working Inverse Voltage 175 V. 1.35 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N3070 Online Store 1N3070 Diodes High Speed High Conductance D iode. Working Inverse Transistors Voltage 175 V. Integrated Circuits

TND908

Abstract: tnd903
Contextual Info: DIODE ARRAYS T h e T N D se rie s c o n sists of diode arrays pa cka ge d in 14-pin and 16-pin dual in-line plastic p a ck a g e s for e a s y autom atic insertion and better printed circuit board density. In addition to the diod e c h aracteristics for standard products

1N3070UR-1

Abstract: DO-213AA
Contextual Info: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:

TND903

Abstract: TND908 TND905 1N3070 1N3595 1N3800 1N4153 TND907 TND918 TND921
Contextual Info: I n t e r n a t/ o n a l T N D 903 thru S e m ic o n d u c t o r , I n c . TND942 DIODE ARRAYS The TND series of diode arrays are packaged in 14 and 16 pin dual-in-line p la stic packages fo r easy autom atic insertion and better printed circ u it board density.