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    DIODE 1N5059 Search Results

    DIODE 1N5059 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N5059 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original     		PDF 1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    1N5060

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original     		PDF 1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 1N5060

    1n5060

    Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506

    1n5060v

    Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode

    1N5062V

    Abstract: 1N5059 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 MIL-STD-750, 1N5059 1N5060 1N5061 D-74025 07-Jan-03 1N5062V 1N5061 1N5062 DIODE 1N5060 1N5060 500MG 1N5059 diode

    1N5062 diode

    Abstract: 1N5060 1N5061 1N5061 vishay
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay

    DIODE 1N5060

    Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Description Polarity: Cathode indicated by a band Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading


    Original     		PDF 1N5059 1N5062 MILSTD-750, 1N5060 1N5061 1N5062 D-74025 09-Oct-00

    1N5062V

    Abstract: 1N5062 1N5059 1N5060 1N5061 iso 15765
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 D-74025 13-Apr-05 1N5062V 1N5062 1N5060 1N5061 iso 15765

    iSO 15765

    Abstract: 1N5061 1N5062V 1n5062 equivalent 1n5059 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 18-Jul-08 iSO 15765 1N5061 1N5062V 1n5062 equivalent 1N5062 diode 1N5060 1N5062 DIODE 1N5060 iso 15765 2

    1N5062V

    Abstract: 1N5059 1N5060 1N5061 1N5062
    Text: 1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope


    Original     		PDF 1N5059 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 08-Apr-05 1N5062V 1N5060 1N5061 1N5062

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5059-1N5062 STANDARD AVALANCHE SINTERGLASS DIODE MAXIMUM RATINGS Parameter Test condition Sub type Symbol Value 1N5059 1N5060 Reverse voltage = repetitive peak reverse voltage 1N5061 400 VR = VRRM Average forward current 800 tp = 10ms, half sinewave


    Original     		PDF 1N5059-1N5062 1N5059 1N5060 1N5061 1N5062 OD-57, OD-57 MIL-PRF-19500,

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    1N5059

    Abstract: 1N5060 1N5061 1N5062 1N5061 vishay
    Text: 1N5059.1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose


    Original     		PDF 1N5059. 1N5062 1N5059 1N5060 1N5061 45K/W, 100K/W, D-74025 24-Jun-98 1N5059 1N5060 1N5061 1N5062 1N5061 vishay

    1N506

    Abstract: No abstract text available
    Text: 1N5059.1N5062 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial–leaded glass envelope 94 9539 Applications Rectifier, general purpose


    Original     		PDF 1N5059. 1N5062 1N5059 1N5060 1N5061 1N5062 45K/W, D-74025 24-Jun-98 1N506

    1n5062 equivalent

    Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
    Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060


    Original     		PDF BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56

    IN5062

    Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
    Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B


    OCR Scan     		PDF DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4447 IN5062 IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    In5062

    Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
    Text: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149


    OCR Scan     		PDF DO-35) 1N4152 1N4150 DLN914, DLN916, DLN4149 DLN4446 DLN4447 DLN4448 In5062 in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode

    1N4007 TOSHIBA

    Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
    Text: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B


    OCR Scan     		PDF 001b4TM DO-35) 1N4152 1N4150 1N4151 1N4153 1N914, 1N916, 1N4149 1N4446 1N4007 TOSHIBA diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount