DIODE 1N5555 Search Results

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

1N5646A JANTX

Abstract: 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
Contextual Info: INCH-POUND MIL-PRF-19500/716 28 April 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH

1N5555

Abstract: Diode 1N5555
Contextual Info: 1N5555 asii TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. MAXIMUM RATINGS 200 A @ t = 8.33 mS Is REVERSE STAND OFF VOLTAGE 30.5V Vr

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

Contextual Info: 1N5555 asi TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. .220" ± .005 DIA. " 5 . 5 8 t .127 DIA. mm .10" MAX. DIA. " 2 . 5 4 MAX. DIA. (mm)

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

Contextual Info: INCH-POUND This documentation process conversion measures necessary to comply with this revision shall be completed by 6 October 1999 MIL-PRF-19500/434C 6 August 1999 SUPERSEDING MIL-S-19500/434B 17 November 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2004. INCH-POUND MIL-PRF-19500/500D 5 November 2003 SUPERSEDING MIL-S-19500/500C 8 July 1997 PERFORMANCE SPECIFICATION * SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N5555

Abstract: 1N5610 1N5611 1N5612 1N5613 qml-19500
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 August 2009. INCH-POUND MIL-PRF-19500/434D 18 May 2009 SUPERSEDING MIL-PRF-19500/434C 6 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N5907 JANTX

Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

Diode 1N5555

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

DO-202AA

Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
Contextual Info: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the

D0-202AA

Contextual Info: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

1N5555

Abstract: 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT UNIDIRECTIONAL

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

n555

Abstract: N5556 D0-202AA 1N5555 1N5556 1N5557 1N5558
Contextual Info: Microsemi Corp. SANTA ANA, CA 1N5556 1N5557 1N5558 SCOTTSDALE, A Z f o r m o re in fo r m a tio n cal!: 6 0 2 941-6300 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF 1 PICO SECOND

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

diode IN5552

Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554
Contextual Info: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­