DIODE 22 16Q Search Results

Contextual Info: STD1NB80-1 N - CHANNEL 800V - 16Q - 1 A - IPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE STD1 NB80-1 • . . . . V d ss R DS on Id 800 V < 20 0. 1 A TYPICAL R D S (on) = 1 6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

MOSFET, 4688

Abstract: diode 22 16Q MOSFET 800V 15A
Contextual Info: SSS2N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVqss ~ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VDS = 800V

Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,

1661m

Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23
Contextual Info: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,

bvn 10

Contextual Info: SSW /D N 80A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 M A M ax @ VOS = 800V Low Rosjon, : 4.688 Q (Typ.) ^DS(on) = 6 .0 Q .

Contextual Info: SSP2N80A Advanced Power MOSFET FEATURES B V Dss = 800 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A M ax. @ B Low Rqs(on) ' 4.688 £1 (Typ.)

metelics FSCM 59365

Contextual Info: I MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5Î2 • Low NF Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. pow er range Doublers • Available in many configurations

Contextual Info: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: SSU2N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |JA M ax. @ VD8 = 800V

Contextual Info: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6

SSS2N90A

Abstract: 5V 2A MOSFET N-channel
Contextual Info: SSS2N90A Advanced Power MOSFET FEATURES ~ 900 V ^ D S on = 7.0 Q. II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 iiA (Max.) @ VDS = 900V Low R ds,oN) : 5 838 Q (Typ.)

Contextual Info: SSU2N90A Advanced Power MOSFET FEATURES B • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 ■ Low Rm V 9 0 0 = s s 7 . 0 ^DS on =

MOSFET 900V 2A

Contextual Info: SSP2N90A Advanced Power MOSFET FEATURES BV0SS = 900 V • ■ ■ ■ ■ > Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 i-iA Max. @ Vqs = 900V

d0215

Contextual Info: SSP3N90A Advanced Power MOSFET B V q ss - 900 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-iA Max. @ VDS= 900V ^DS(on) = 6 .2 Q.

Contextual Info: SSW/I2N90A Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge R DS on = 7 .0 Q . In = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A (M a x ) @ V0s = 9OOV

Contextual Info: SSS3N90A A d van ced Power MOSFET FEATURES bvdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jJA(Max.) @ VDS= 900V

Contextual Info: SSW/I3N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 liA M ax @ VDS= 900V

Contextual Info: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V

SONY APS 252 power supply

Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Contextual Info: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and

Schottky Diode 5V 6A

Abstract: Schottky Diode 40V 6A 1k ohm resistor FDS6690A resistor 15k 15k resistor resistor r7 1K 10MV1200AX capacitors 22nf 0805 10V CAPACITOR X7R 4.7UF
Contextual Info: C3 4.7uF 10V +5V INPUT C5 1200uF 10V MV-AX D1 CMPSH-3 9 R1 15k C1 22nF 2 16 VP 15 VL BST ILIM COMP DH LX DL +5V GND 11 C4 0.1uF R3 4.7 R4 4.7 10 OUT 1 POK 3 R5 10.0k FB 4 B2 5 FB2 6 +1.24V B3 FB3 7 R7 220 C9 330pF R8 22.1k R9 22.1k +5V C8 1uF 10V Q3 CMPT 3906

AL 1450 DV

Contextual Info: PD-9.565 B International !k Rectifier IRC630 HEXFET® P o w e r M O S F E T Dynam ic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirem ents V dss - 2 0 0 V ^D S o n - 0 . 4 0 0 lD = 9 .0 A Description

KDR720E

Abstract: ir sence ver 2
Contextual Info: S E MI CON D U C T O R KAB3403T T E C H N I C A L DATA BICD 1.INEAR IN T E G R A T E D C IR CU IT White LED Step-Up Converter T h e K A B 3 4 0 3 T is a m o n o lith ic s te p - u p D C /D C c o n v e r te r s p e c if ic a lly d e s ig n e d to d riv e w h ite L E D s w ith a c o n s ta n t c u r re n t fr o m L i-io n c e ll.

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

MAX1684

Abstract: MAX1684EEE MAX1685 MAX1685EEE MAX1692
Contextual Info: 19-1454; Rev 1; 11/99 ANUAL N KIT M EET IO T A U EVAL TA SH WS DA FOLLO Low-Noise, 14V Input, 1A, PWM Step-Down Converters Both devices are available in a space-saving 16-QSOP package. An evaluation kit is also available to help speed designs. For a similar device in a 10-pin µMAX