DIODE ARS Search Results

11-5B2

Abstract: E67349 TLP722 TLP722F VDE0884
Contextual Info: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . TLP722 : Single circuit 30 V (max) Cathode-Anode Voltage

TLP590

Contextual Info: i GaAs IRED & PHOTO-DIODE ARRAY TELECOMMUNICATION TLP590 TENTATIVE DATA PROGRAMMABLE CONTROLLERS. MOS GATE DRIVER MOS FET GATE DRIVER The TOSHIBA TLP590 consists of a galium arsenide infrared emitting diode optically coupled to a series connected photo-diode array in a six lead plastic DIP

SE301A

Abstract: 30mWI
Contextual Info: N E C 30E D ELECTRONICS INC • h42752S 005=^44 fi ■ LIGHT EMITTING DIODE SE301A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header

11-5B2

Abstract: E67349 TLP722 TLP722F VDE0884
Contextual Info: TO SH IBA TENTATIVE TLP722 TOSHIBA PHOTOCOUPLER PHOTO-DIODE TLP722 Unit in mm The TOSHIBA TLP722 consists of a photo-diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP DIP4 . 4 3 5LJZ JJ lU TLP722 : Single circuit

Contextual Info: N E C ELECTRONICS INC 30E D • h42752S 005=^44 Ô ■ LIGHT EMITTING T-M/-U DIODE SE301A GaAs INFRARED EMITTING DIODE INDUSTRIAL USE DESCRIPTION The SE301A is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on a TO-18 hermetically sealed header

varactor diode notes

Abstract: varactor diode high frequency x band varactor diode "Varactor Diode" CAY10 Parametric Varactor diodes
Contextual Info: GALLIUM ARSENIDE VARACTOR DIODE 125 150 Tstud CO CAYIO TOTAL DISSIPATION PLOTTED AGAINST STUD TEMPERATURE ffr. tm r e ì CAYIO Page C I GALLIUM ARSENIDE VARACTOR DIODE CAYIO TEN TA TIV E DATA Gallium arsenide varactor diode with a high cut-off frequency for use in

Contextual Info: NEC LIGHT EM ITTING EifCTROfJ DCVICE DIODE SE302A GaAs INFRARED EM ITTING DIODE INDUSTRIAL USE -N E P O C SERIES - DESCRIPTION The SE302A is a GaAs G allium Arsenide Infrared Lig h t E m ittin g Diode w hich is m ounted on the lead fram e and m olded in

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

CVD-450

Abstract: Laser Diode 808 nm
Contextual Info: LASER DIODE INC 1SE D I Sl&EI&B DODDMSl 5 I T -fh O f C VD-400 SERIES LASER DIODE, INC. QUASI CW LASER DIODE ARRAYS FEATURES: ► ► ► ► ► ► ► DESCRIPTION: The CVD-400 series lasers are Gallium Aluminum Arse­ nide Monolithic Quantum Well Arrays made by MOCVD

Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP266

Abstract: OP506 OP535 OP266FAD OP266F
Contextual Info: Plastic Infrared Emitting Diode OP266FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP266FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP265

Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

OP265FAD

Abstract: GaAs 850 nm Infrared Emitting Diode OP265 OP505 OP535 OP265FAA OP265F
Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

SE310

Abstract: PH110
Contextual Info: NEC ELECTRONICS INC 3QE D • 1=427525 0 0 2 ‘iû5b M ■ /> T -tl-ll LIGHT EMITTING DIODE SE310 GaAs INFRARED E M IT T IN G DIODE DESCRIPTION The SE310 is a GaAs Gallium Arsenide Infrared Em itting Diode which is mounted on the lead frames and molded in plastic.

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP265FAA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265FAA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

Contextual Info: Plastic Infrared Emitting Diode OP266AA SERIES Features: • T-1 3 mm package style  Narrow irradiance pattern  Dome lens  Higher power output than GaAs at equivalent drive currents  850 nm diode Description: Each device in the OP266AA series is a high intensity gallium aluminum arsenide infrared emitting diode (GaAIAs)

SE308T

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE308-T GaAs INFRARED EMITTING DIODE -N E P O C SERIES— D ESCRIPTIO N The SE308 is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lud frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 940 nm.

ASI15

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE S E 307-C GaAs INFRARED EMITTING DIODE -N EP O C SERIES— DESCRIPTION The SE307-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band of radiation peaking at 9 4 0 nm.

PH201A

Abstract: photo diode circuit
Contextual Info: NEC PHOTO DIODE ELECTRON DEVICE PH201A PHOTO DETECTOR GaAsP PHOTE DIODE -N E P O C S E R IE S - DESCRIPTION The PH201A is a GaAsP gallium arsenide phosphide photo diode designed for use as a photo detector o f electronic camera. It features wide active area, close spectral response to that o f human eye and wide light current range.

SE303A-C

Contextual Info: DATA SHEET NEC LIGHT EMITTING DIODE ELECTRON DEVICE SE303A-C GaAs INFRARED EMITTING DIODE -N E P O C SERIES - DESCRIPTION The SE303A-C is a GaAs Gallium Arsenide Infrared Emitting Diode which is mounted on the lead frames and molded in plastic. On forw ard bias, i t emits a spectrally narrow band of radiation peaking ax 940 nm.

se3-13

Contextual Info: NEC DATA SHEET SE313 LIGHT EMITTING DIODE ELECTRON DEVICE GaAs INFRARED EMITTING DIODE -N E P O C SERIES— DESCRIPTION The SE313 is a GaAs G allium Arsenide Infrared E m ittin g Diode which is m ounted on the lead frames and molded in plastic. On forward bias, it emits a spectrally narrow band o f radiation peaking at 940 nm.

C10535E

Abstract: MEI-1202 NDL7001 NDL7001L NDL7401P NDL7408P
Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

optointerrupter

Contextual Info: Optointerrupter Specifications _ H22B1, H22B2, H22B3 Optointerrupter GaAs Infrared Emitting Diode andNPN Sfllcon Photo-Darlington Module with 1mm Aperture T he H22B Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon Darlington-connected