DIODE B50 Search Results

B5003

Abstract: 05B5
Contextual Info: BAS40.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switchhing • Circuit protected • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

BAS70-04

Abstract: BAS 40 B5003 73S SOT23 75S SOT23 schottky 73s
Contextual Info: BAS70.B5000 / B5003 Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Improved operating temperature range due to extra-low thermal resistance see attached Forward current curves

Contextual Info: • b 1353131 0024433 b50 « A P X N A HER PHILIPS/DISCRETE BBY42 b?E » J V V.H.F. VARIABLE CAPACITANCE DIODE The B B Y 4 2 is a variable capacitance diode in a microminiature plastic envelope SOT-23. It is intended for use in v.h.f. T V tuners and C A T V applications using S M D technology.

b49 diode

Abstract: ESJC04-05 ESJC04 F151 T760 micro wave oven esjc0405
Contextual Info: ESJC 0 4 5kv : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJC04(*, ESJC04 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin. Features • 'm Small size

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

74F1056

Abstract: 74F1056SC C1995 M16A b50 diode
Contextual Info: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching

Contextual Info: S IE M E N S Silicon Low Leakage Diode Array BAV 199 • Low-leakage applications • Medium speed switching times • Connected in series Type Marking Ordering Code tape and reel B A V 199 JY s Q62702-A921 Pin Configuration Package1) 3 SOT-23 EHA07005 Maximum Ratings per Diode

B500C1000

Abstract: Semikron SKBa
Contextual Info: SKBa B500C1000L5B power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !/012  !!1&$ ! ! .;, +, Symbol  '$& @ Avalanche Bridge Rectifiers SKBa B500C1000L5B

Zurich E2

Abstract: b50c laser diode bar Bookham bookham LASER
Contextual Info: Data sheet 50W 806nm High Power Bare Laser Diode Bar B50C-806-01 Features • Bare 10mm x 1.2mm laser bar • 50W operating power • Highly reliable single quantum well MBE structure • Excellent solderability The Bookham Technology B50C-806-01 bare laser bar

Semikron SKB B500

Abstract: semikron B500 Semikron SKBa skb b500/445-4 semikron SKB b500/445-4
Contextual Info: SKBa B500/445-4 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ./#01  .0'  3 * 4 /5 3 6* 7 1 . . 5$ -:+ *+ ;# #*+<66*=6 Symbol Conditions 

Semikron SKBa

Contextual Info: SKBa B500C1500 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter !/012  !!1&$ ! ! .;, +, Symbol  SKBa B500C1500 .2 4 7+ 8%   " .2 4 ; 8%   "

mska

Abstract: Semikron MSK B B500 bridge B500/6700
Contextual Info: MSKa B500/445-1,5 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -./01   -0$"  3 4 .5 3 6 71 + 0  ,:* )* 5&  $"; /)*<66)=,#) 8% 9 ,>*

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

1S44

Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
Contextual Info: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200

1S920

Abstract: 1n659 diode BA318 1S44 1N461A 1N462A 1N463A 1N659 1N660 1N661
Contextual Info: Diode Data NATL SEMICOND DISCRETE D | h e b5013.30 DQ37Q03 D | T -0 1 -0 1 500 25 1.0 100 D2 70 500 60 1.0 100 D2 175 1.0 100 1.0 6.0 300 Note 1 D4 6.0 300 (Note 1) D1 300 (Note 1) D1 8 (Note 2) D4 1N461A DO-35 1N463A 1N659 1N660 DO-35 DO-35 DO-35 200 60

bav70

Abstract: BAV74
Contextual Info: BAV70 / BAV74 tß Discrete POWER & Signal Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Value Units Average Rectified Current 70 50 200 V

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: SCHOTTKY BARRIER DIODE 151MQ30 151MQ40 166A/30— 40V FEATURES o Hermetically Sealed Case • High Reliability Device 0 Low Power Loss, High Efficiency # High Surge Capability MAXIMUM RATIN GS \ type Voltage Rating ♦ 151MQ40 + 151MQ30 Unit Symbol\ Repetitive Peak

Contextual Info: E O PLASTIC SIDELOOKER PAIR OPTOELECTRONICS H23A1/2 PACKAGE DIMENSIONS DESCRIPTION I SECTION X-X LEAD PROFILE The H23A is a matched emitter-detector pair which consists of a gallium arsenide infrared emitting diode and a silicon phototransistor. The clear epoxy packaging

Contextual Info: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated

Contextual Info: DH0035/DH0035C & National Semiconductor DH0035/DH0035C PIN Diode Driver General Description The DH0035/DH0035C is a high speed digital driver de­ signed to drive PIN diodes in RF modulators and switches. The device is used in conjunction with an input buffer such

1KAB80E

Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

J127B

Contextual Info: o Wideband, Low Power g o Monolithic Op Amp tip ] Comlinear ÏÜUJCorporation •t* CT> CLC406 APPLICATIONS: • video distribution amp • HDTV amplifier • flash A/D driver • D/A transimpedance buffer • pulse amplifier • photo-diode amp • LAN amplifier