DIODE BAY 80 PH Search Results

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Contextual Info: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

dual photodiode

Abstract: 2 Wavelength Laser Diode ADN2841 automatic laser power control diode IN 5402 FU-445 laser diodes driver
Contextual Info: ADN2841—Continuous Rate 2.7 Gbps Laser Diode Driver with Dual-Loop Control Features • Closed-loop control of the laser diode average power and extinction ratio • Does not require any data formatting • Data rates from 50 Mbps to 2.7 Gbps 80 ps typical rise time

HA17902AP

Abstract: HA17902 HA17902A HA17902AFP HA17902ARP HA17902AT HA17902AR
Contextual Info: HA17902A Series Quad Operational Amplifier REJ03D0686-0200 Rev.2.00 Mar 10, 2006 Description HA17902A series are quad operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely used to control equipments.

HA17904

Abstract: HA17904A HA17904AFP HA17904APS HA17904ARP HA17904AT PRDP0008AF-B PRSP0008DE-B
Contextual Info: HA17904A Series Dual Operational Amplifier REJ03D0689-0200 Rev.2.00 Mar 10, 2006 Description HA17904A series are dual operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely applied to control equipments and to general use.

HVC145

Contextual Info: HVC145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0423-0300 Previous: ADE-208-1500B Rev.3.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)

ha17324a

Abstract: HA17324 HA17324 equivalent 8 pin HA17324A application HA17324AF HA17324ARP HA17324AT PRDP0014AB-B
Contextual Info: HA17324A Series Quad Operational Amplifier REJ03D0674-0400 Rev.4.00 Mar 10, 2006 Description HA17324A series are quad operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely used to control equipments.

HA17358

Abstract: HA17358A HA17358AF HA17358ARP HA17358AT PRDP0008AF-B PRSP0008DD-C PRSP0008DE-B HA17358 603
Contextual Info: HA17358A Series Dual Operational Amplifier REJ03D0676-0400 Rev.4.00 Mar 10, 2006 Description HA17358A series are dual operational amplifier that provide high gain and internal phase compensation, with single power supply. They can be widely applied to control equipments and to general use.

schematic diagram inverter 12v to 24v 30a

Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Contextual Info: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the

HVD145

Contextual Info: HVD145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0430-0200 Previous: ADE-208-1507A Rev.2.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)

HVD141

Contextual Info: HVD141 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0427-0100 Previous: ADE-208-1087 Rev.1.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.82 pF max) Low forward resistance. (rf = 0.8 Ω max)

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

HVL145

Contextual Info: HVL145 Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0434-0100 Previous: ADE-208-1597 Rev.1.00 Dec 07, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.45 pF max) Low forward resistance. (rf = 1.8 Ω max)

Contextual Info: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

Contextual Info: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

je 3055

Abstract: RAYTHEON RMWM38001 RMWP38001
Contextual Info: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,

S400

Abstract: lps 256
Contextual Info: 1394 Open HCI Systems Neil Morrow Product Development Mixed Signal PCIbus Solutions Texas Instruments, Inc. Presentation Overview 1394 Open HCI systems What, Where, Why of 1394 Open HCI OHCI hardware choices What to look for in Open HCI devices A look at Open HCI power management