DIODE BUZ 300 Search Results

14A3

Abstract: C67078-A1403-A2
Contextual Info: ÔÛD ö235bDs D ooma^M a « s i e g SIEMENS AKTIENGESELLSCHAF BUZ 206 Main ratings N-Channel = 400 V Drain-source voltage I^DS Continuous drain current a 5A h Draln-source on-resistance ^DS on = 1,5 Q. Description FREDFET with fast-recovery reverse diode, N-channel, enhancement mode,

Contextual Info: ÜÖD D • 88D û23StiQS QQISQbô 2 H S I E â 15068 D BUZ 360 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Draln-source voltage K>s Continuous drain current ii Draln-source on-reslstance ^DS on 800 V 3,6 A 3,0 Si Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode

C67078-A1101-A2

Contextual Info: öö» D • ÔSBSbOS GG14ö7b b ■ SIEG 88D 14876 D 7 BUZ 201 SIEMENS AKTIENGESELLSCHAF-Main ratings N-Channel Draln-source voltage l^ S Continuous drain current h Draln-source on-reslstance R,OS on) Description Case = 400 V « 12,5 A = 0,4 n FREDET with fast-recovery reverse diode, N-channel, enhancement mode

yt 1208 diode

Abstract: yt 1208 diode b14 624 DIODE B12 50/yt 1208 diode A1700 C67078-A1700-A2 B12 diode
Contextual Info: ÖÖD D • 053SbOS D a m a l s b 88D 14912 d ISIE G T-3*7-/3 BUZ 213 SIEMENS AKTIENGESELLSCHAF -Main ratings Draln-source voltage = soov Kis Continuous drain current = 8,5 A h Draln-source on-reslstance ^OS on = 0,6 Q Description Case FREDET with fast-recovery reverse diode, N-channel, enhancement mode

DIODE S45

Contextual Info: ÖÖD D • ÔE3SbQ5 0015074 ö H S I E 6 88D 15074 D BUZ 361 SIEMENS AKTIENûESELLSCHAF Main ratings N-Channel a 800 V Drain-source voltage Vos = 2,9 A Continuous drain current h Drain-source on-resistance ^DS on 4,5 a Description FREDET with fast-recovery reverse diode, N-channel, enhancement mode

Contextual Info: ÔÛD ö 235 b D s D ooma^M a « s i e g SIEMENS AKTIENGESELLSCHAF BUZ 206 Main ratings N-Channel = 400 V Drain-source voltage I^DS Continuous drain current a 5A h Draln-source on-resistance R,O S o n = 1,5 Q. Description Case FREDFET with fast-recovery reverse diode, N-channel, enhancement mode

GS 358

Abstract: BUZ357 BUZ54A BUZ54 BUZ 54 BUZ 140 L
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 54 BUZ 54 A BUZ 357 BUZ 358 = 1000 V = 4.5 . 5.1 A ^DS on = 2.0 . . . 2.6 Q VDS l0 • N channel • Enhancement mode • Packages TO-204 AA (TO-3) TO-218AA (TOP-3)1) TO-204AA 54/54 A) G TO-218AA Type Ordering code

C67078-S1343-A2

Abstract: buz93
Contextual Info: SIPMOS Power Transistors BUZ 92 BUZ 93 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 92 600 V 3.3 A 3.0 Ω TO-220 AB C67078-S1343-A2 BUZ 93 600 V 3.6 A 2.5 Ω TO-220 AB C67078-S1346-A2 Maximum Ratings

BUZ54

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3

BUZ54

Abstract: BUZ54A Diode D 54 3tf* siemens 235L C160 TC-130-W C67078-S1010-A3 DIODE BUZ 300
Contextual Info: SIEM ENS SIPMOS Power Transistors BUZ54 • N channel • Enhancement mode • Avalanche-rated VMT05152 Type VDS Id •^DS on Package 1> O rdering Code BUZ 54 1000 V 5.1 A 2 .0 £2 T O -2 0 4 A A C 6 7 0 7 8 -S 1 0 1 0 -A 2 BUZ 54 A 1000 V 4 .5 A 2 .6 n

BUZ74

Contextual Info: SIEMENS SIPMOS ' Power MOS Transistors VDS /D f to s i o n BUZ 74 BUZ 74 A = 500 V = 2 .4 /2 .1 A — 3 .0 / 4.0 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) Type Ordering code BUZ 74 C 67078-A 1314-A 2 BUZ 74 A

buz357

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 357 N channel Enhancem ent mode Avalanche-rated Type V Ds Id BUZ 357 1000 V BUZ 358 1000 V ^ D S on Package 1> Ordering Code 5.1 A 2.0 £2 TO -218 AA C 67078-S3110-A2 4.5 A 2 . 6 £2 TO -218 AA C 67078-S3111-A2

C67078-S1300-A2

Abstract: C67078-S1300-A7 buz 10 BUZ 14 BUZ10
Contextual Info: SIPMOS Power Transistors BUZ 10 BUZ 10 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 10 50 V 23 A 0.07 Ω TO-220 AB C67078-S1300-A2 BUZ 10 S2 60 V 23 A 0.07 Ω TO-220 AB C67078-S1300-A7 Maximum Ratings

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 76 BUZ 76 A N channel Enhancement mode Avalanche-rated Type ^DS Id ^DS on Package 1> O rdering Code BUZ 76 400 V 3.0 A 37 "C 1.8 Q TO -220 AB C 67078-S 1315-A2 BUZ 76 A 400 V 2.7 A 23 ”C 2.5 n TO -220 AB

buz71a

Abstract: A1316-A3 BUZ71 SM 71A diode diode L 2 . 71 sm 71a
Contextual Info: S IE M E N S BUZ 71 BUZ 71 A SIPMOS Power MOS Transistors ^D S = Id = ^ D S o n = • • • • BUZ 71 S2 50 . . 60 V 13 . . 14 A 0.1 . .0 .1 2 N channel Enhancem ent mode A valanche-proof Package: TO -220 A B 1) Type Ordering code BUZ 71 C 67078-S 1 31 6-A 2

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

BUZ93

Abstract: S1343A BUZ92
Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 92 BUZ 93 N channel Enhancem ent mode Avalanche-rated Type ^DS ¡D R o S on Package 1> O rdering Code BUZ 92 600 V 3.3 A 3.0 Q TO -220 AB C 67078-S1343-A2 BUZ 93 600 V 3.6 A 2.5 n TO -220 AB C67078-S1346-A2 Maxim um Ratings

buz 342 G

Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m

BUZ54

Abstract: BUZ54A
Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 54 N channel Enhancem ent mode Avalanche-rated Type ^ DS la ^ D S on Package 1> BUZ 54 1000 V 5.1 A 2.0 £3 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO -204 AA C67078-S1010-A3 Ordering Code

C67078-A1315-A2

Contextual Info: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings

KDS 7c

Contextual Info: SIEMENS BUZ 10 BUZ 10 S2 SIPMOS Power Transistors • • • N channel Enhancem ent mode Avalanche-rated P a c k a g e 1 O rdering Code Type V ds ¡0 BUZ 10 50 V 23 A 0.07 n TO-220 AB C67078-S1300-A2 B U Z10S2 60 V 23 A 0.07 Í2 TO-220 AB C67078-S1300-A7

BUZ 323

Contextual Info: SIEMENS BUZ 323 SIPMOS Power Transistor • N channel • Enhancement mode V'ObSB 1 • Avalanche-rated i Pin 1 Pin 2 G Type BUZ 323 Vbs 400 V b 15 A Pin 3 D S fbsion Package Ordering Code 0.3 n TO-218AA C67078-S3127-A2 Maximum Ratings Parameter Symbol

transistor buz 11

Contextual Info: SIEMENS BUZ 11 AL N ot for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V'ds BUZ 11 AL 50 V k> 26 A AbS on 0.055 n Package Ordering Code TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter

Contextual Info: SIEMENS BUZ 382 SIPMOS Power Transistor • N channel • Enhancement mode V'IOys6 • FREDFET 3 Pin 1 Pin 2 Type BUZ 382 Vbs 400 V b 12.5 A flbSfon 0.4 w Pin 3 D G S Package Ordering Code TO-218AA C67078-A3207-A2 Maximum Ratings Parameter Symbol Drain source voltage