hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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V23134-A1052-X299
Abstract: "Power Relay"
Text: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar
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V23134-A1052-X299
3D40HB30
volt40
V23134-A1052-X299
"Power Relay"
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LN66
Abstract: LN66L
Text: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf
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LN66L
LN66
LN66L
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LN172
Abstract: 70nM
Text: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 M Di ain sc te on na tin nc ue e/ d 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 For optical control systems Features ue pl d in an c se ed lud pl vi an m m es si
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LN172
LN172
70nM
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SCR GTO
Abstract: RC firing circuit FOR SCR SCR Gate Drive scr RC snubber design dc circuit breaker using SCR gto firing circuit SCR 6 pulse Gate Drive selen scr latching RC snubber scr design inductive load
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 2.0 POW-R-BLOK Module Mounting Figure 2.1 SCR/GTO/Diode POW-R-BLOK™ Modules Application Information Mounting Screw Fastening Pattern ➃ When mounting POW-R-BLOK™ modules to a heatsink, care
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Untitled
Abstract: No abstract text available
Text: 9.2mm x 1.9mm BACK LIGHT KA-9219/2EC HIGH EFFICIENCY RED KA-9219/2GC GREEN KA-9219/2YC YELLOW KA-9219/2SRC SUPER BRIGHT RED KA-9219/2SGC SUPER BRIGHT GREEN Features Description ! LOW The High Efficiency Red source color devices are made POWER CONSUMPTION.
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KA-9219/2EC
KA-9219/2GC
KA-9219/2YC
KA-9219/2SRC
KA-9219/2SGC
KA-9219/2EC
KDA0476
SEP/22/2001
KA-9219/2GC
KA-9219/2YC
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and
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NDL3220,
NDL3220S
L3220
IEI-1209)
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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zener diode 1N PH 48
Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
Text: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503
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RH821-829,
RH3154-3157A,
RH935-939B,
RH941-944B
RH3501-3504
RH4890-4895A.
AZRH8825
zener diode 1N PH 48
zener diode 1N PH 44
1X1018
RH4895
1N4915A
RH4895A
RH939
1N4057
1N4085A
1N4565
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DSAIH0002570
Abstract: No abstract text available
Text: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135
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1N140_
MIL-S-19500,
DSAIH0002570
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DIODE RK 306
Abstract: tr/DIODE RK 306
Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.
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SD-503
SD-503B,
SD-503
DIODE RK 306
tr/DIODE RK 306
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water cooled thyristor assembly
Abstract: Ignitron Thyristor 6kV DYNEX PULSED THYRISTOR
Text: p o w er assem blies A ir C o o le d A s s e m b lie s E xam p le ra tin g s 40°C a m b . 3<(>diode bridge. 6Kv devices. Output current 745 A. Each device cooled by 225mm of ED fin. The same assembly forced air cooled at 2.5 m/s has an output current of 1159A.
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225mm
300mm
water cooled thyristor assembly
Ignitron
Thyristor 6kV
DYNEX PULSED THYRISTOR
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Untitled
Abstract: No abstract text available
Text: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •
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YG802C
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Untitled
Abstract: No abstract text available
Text: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e
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o322-3331,
D-6380
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1NS14
Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S
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SQ1213A
MV83Z
MV833
MVB34
MV835
MVS36
MV837
MV838
MVB40
1NS14
1N487A
G610A
1N473A
1MH12
PEC 736
amk 30-2
HA1I34A
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Untitled
Abstract: No abstract text available
Text: niCRO PAC IN D U ST R IE S 42E IN C D b l l 2 b 4 G OOOCHOb H 1 B MPI GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE G S 3040 * HIGH INTENSITY G aA IA s VER SIO N A V A IL A B L E M i-U MINIATURE HIGH EFFICIEN C Y LED WITH N AR RO W BEAM A N G LE G LA S S/M E TA L W ELD ED P A C K A G E
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MIL-S-19500.
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Untitled
Abstract: No abstract text available
Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows
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VN0300
300jxs
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CM200E3Y-12E
Abstract: GE 047 TRANSISTOR
Text: m tm B C Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 CM200E3Y-12E Chopper IGBTMOD E-Series Module 200 Amperes/600 Volts Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each
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CM200E3Y-12E
Amperes/600
150ns)
15-20kHsylvania
GE 047 TRANSISTOR
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CM50E3Y-12E
Abstract: CM50E3Y
Text: m Ê Ê B Œ K CM50E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 50 Amperes/600 Volts Description: CM50E3Y-12E Chopper IGBTMOD™ E-Series Module 50 Amperes/600 Volts Powerex C hopper IGBTMOD™
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CM50E3Y-12E
Amperes/600
CM50E3Y-12E
QG072M2
CM50E3Y
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92 .7±0.6 • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode
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MG15Q6ES42
15Q6ES42
2-93A3A
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