DIODE J10 Search Results

antenna mtbf

Abstract: J101 kdi 64537 receiver module mtbf mtbf antenna high power pin diode kdi 64537 switch pls 2-40 rf module mtbf AY-J101
Contextual Info: AY-J100 & AY-J101 PIN Diode Switch Assembly Switching speed is 3 S Maximum and the unit operates with +5Vdc at 300mA and -24Vdc@10mA, plus TTL logic. Description: Aeroflex introduces a new series of high power PIN diode switch assemblies for use as antenna horizontal or

marking code SM diode

Abstract: GGP DIODE marking SM 98 GGT DIODE GHM DIODE j78 transistor marking CODE J36 diode GGT DIODE ON GGR diode ggk diode
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

marking code SM diode

Abstract: GGR diode marking SM 98 GGT DIODE marking CODE J36 diode GGP DIODE marking code GGt GGT DIODE ON sm 58 b marking code SM CM
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 33 to 170 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

Gex DIODE

Abstract: Gex 66 diode GEX 51 DIODE GEX 54 DIODE marking code KE diode diode marking GDE 38 SMJ30 diode Marking Code lm tvs diode GEP 86 A marking diode KE
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

GEX 51 DIODE

Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage

MPD2T28125-700-E

Contextual Info: PIN Diode Driver MPD2T28125-700 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW2000, 2010, 2030, 2040 and 2050 Series T-R and Symmetrical High Power SP2T Switches.

Contextual Info: International B Rectifier SERIES IRK.F82 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package

diode KL-03

Abstract: SMD DIODE CCD MARKING SMD MARKING CODE jt D1FJ10 marking code ccd diode smd diode schottky code marking 63 SMD MARKING CODE 501 KL-03 MARKING 1F smd marking code je
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u t lin e Package : 1F D 1 F J10 Unit I mm Weight 0.058# Typ i>y - K - 7 - » ' Cathode* mark 100V 1A >r Feature I • /J v S S M D • Sm all S M D • I r = 0.2mA • Low lR=0.2mA -3 CM CM I M 2' J@ . u-/i-K n(W )

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

2N3906 diode

Abstract: TCM1617 2N3906 TC02 TC1066 TC1068 TCM1617EV lpt to I2c Diode SMB J5
Contextual Info: TCM1617EV EVALUATION KIT FOR TCM1617, TC1066 AND TC1068 SMBUS THERMAL SENSORS WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • The TCM1617EV is an evaluation kit specifically designed to support the TCM1617, TC1066 and the TC1068 SMBus thermal sensors with external diode inputs. The

Contextual Info: ^CM/EREX CS241020 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 FSSt RßCOV&ry S in g le Diode Module 200 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast

1010* diode

Contextual Info: HICRONETICS INC 34E 0000341 D b IÎ1R0 Single Pole Single Throw HIGH BAND 1 GHz to 18.5 GHz PIN Diode •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed •Operates from -55”C to +125°C •Wide bandwidth: 10 MHz to 18.5 GHz

1N4148 diode HBM

Contextual Info: PIN Diode Driver MPD3T5N200-703 Series Datasheet Features • Higher Output Voltage and Higher Output Current PIN Diode Driver in Surface Mount Package • Usable with MSW3200-320 Series High Power Switches. • Operates from 2 Polarities: +5 V and -15 V to -200 V

DIODE MOTOROLA 633

Abstract: J10 DIODE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G R E E I N E MMBD1005LT1 MMBD2005T1 MMBD3005T1 Sw itching Diode Part of the GreenLine Portfolio of devices with energy-conserving traits. This switching diode has the following features: • Very Low Leakage < 500 pA promotes extended battery lifeby decreas­

MMIC code D

Abstract: MMIC code 61 J10003 mmic code R mmic code h
Contextual Info: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed

Contextual Info: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching

CDH60

Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Contextual Info: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability

SU212

Abstract: MMIC code G
Contextual Info: MICRONETXCS INC 34E D D b l l l 7 M2 0 Q0 D 343 T ElMRO Single Pole Two Throw T'5/~" LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) CUSiIQMi R''FION -DESSRI&TI©w m: . r r \ mr " . • ’ . r - -•GaAs, MMIC and PIN diode technology

MMIC code D

Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
Contextual Info: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability

EM- 546 motor

Contextual Info: MOTOROLA Order this document by MJ10007/D SEMICONDUCTOR TECHNICAL DATA M J10007* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode ‘ Motorola Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON

EM- 546 motor

Abstract: BTa 140 equivalent transistor crossover MJ10009
Contextual Info: MOTOROLA Order this document by MJ10009/D SEMICONDUCTOR TECHNICAL DATA M J10 009* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode ‘ Motorola Preferred Device 20 AMPERE NPN SILICON

Contextual Info: MOTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J10023 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS

MJ10005

Abstract: TO218 20A Darlington mj10004 e100325 MJ-10004 MJ10004PFI TO-3 250V 20A MJ10
Contextual Info: *T# S G S -TiLHüOOMTS O«N! MJ10004/4P/4PF1 M J10005/5P /5P FI EPITAXIAL PLANAR NPN DESCRIPTIO N The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated speed-up diode.