DIODE LT 450 Search Results

IR E78996

Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Contextual Info: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20

Step-up 12V to 36V 300mA

Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Contextual Info: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The

dsei 31-06c

Contextual Info: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

ltg2

Abstract: LT3464ETS8
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

ltg2

Abstract: LQH32CN470K LEMC3225 LT3464ETS8 BJ105MA-T murata lqh32cn470k ELJPA470KF LQH32CN220K53 LQH32CN470K53 LQH32CN680K53
Contextual Info: LT3464 Micropower Boost Converter with Schottky and Output Disconnect in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

lemc3225

Abstract: murata lqh32cn470k GMK212 LMK107 LT3464 LT3464ETS8 LEMC3225-100 c3464 8D26 LEMC3225-68
Contextual Info: Final Electrical Specifications LT3464 Micropower Boost Converter with Integrated Schottky and Output Disconnect in ThinSOT U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3464 is a micropower step-up DC/DC converter with integrated Schottky diode and output disconnect

LT 8233

Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

22B27

Abstract: BZY95-C39 BZY95C18 BZY96-C6V8 BZY96 BZY95C10 BZY96C5V1 IN1765 BZY95-C10 BZY96-C5V1
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • & 137 &&^ BZY9S/BZY96/Z2 OOOOISI O B S L C B SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

BZY95C12

Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Contextual Info: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power

a boost dc to ac inverter

Abstract: LT1930 sharp oled display LQH32CN100K53 LQH32CN150K53 LT3494 LT3494EDDB dc ac inverter circuit
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high

LT3494EDDB

Abstract: LQH32CN100K53 LQH32CN150K53 LT3494 CDHED13 f06c g0105
Contextual Info: LT3494/LT3494A Micropower Low Noise Boost Converters with Output Disconnect FEATURES DESCRIPTION • The LT 3494/LT3494A are low noise boost converters with integrated power switch, Schottky diode and output disconnect circuitry. The parts use a novel* control technique resulting in low output voltage ripple as well as high

JU003

Contextual Info: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls

transistor bel 100

Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Contextual Info: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31

diode lt 205

Abstract: thyristor 12V 1A
Contextual Info: /S T SCS-THOMSON ö^O !MSi(gir^(QM(g§ MDS35 DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d r m = V r r m UP TO 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V{RMS) DESCRIPTIO N The MDS35 family are consist of one rectifier

Contextual Info: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R

92C605

Abstract: RADIOTRON triode rca company Scans-0017338
Contextual Info: DIODE-TRIODE-POWER AMPLIFIER PENTODE F i 1 ament C o a te d 1 .4 d -c v o lt s V o lt a g e amp. 0.1 C u rre n t Maxim um O v e r a l 1 L e n g t h 3 -5 / 1 6 " 2 -3 / 4 " Maxim um S e a t e d H e ig h t Maxim um D ia m e t e r 1 -5 / 1 6 " B u lb T -9 S k irte d M in ia t u r e - S t y l e C

Contextual Info: rrunm TECHNOLOGY LT1572 100kHz, 1.25A Sw itching R eg ulato r w ith C a tc h D iode F€fflUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1572 is a 1.25A 100kHz monolithic switching regulator with on-board switch and catch diode included in one package. It combines an LT1172 with a 1A Schottky

Contextual Info: M U LT I C H IP B IP O L A R D IG IT A L IN T EG R A T E D CIRC UIT TD62M8600F 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F is Multi Chip 1C incorporates 8 low saturation discrete transistors equipped Fly-wheeling Diode and Bias resistor. This 1C is suitable for a battery use motor drive and LEE

LT 5224 diode

Abstract: IN5222 IN5229 LT 5224 zener diode in 5229 b
Contextual Info: 1N5221 thru Microjsemi Corp. f The diode experts / SANTA ANA, CA / / SCOTTSDALE, AZ 1N5281 DO-35 F o r m ore in fo rm ation call: 6 0 2 9 4 I-6 3 0 0 SILIC O N 500 mW ZEN ER D IO D E S FEATU R ES • 2.4 THRU 200 V OLTS • COM PACT PAC KAGE • CO N SU LT FA C TO R Y FOR V OLTAGES ABO VE 200 V

LT 5247

Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Contextual Info: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V

Contextual Info: Te m ic BA604 TELEFUN KEN Sem iconductors Silicon Planar Diode Applications General purpose .- 4 l - Absolute Maximum Ratings Tj = 25 °C P a r a m e te r T e s t C o n d it io n s Type P e a k r e v e r s e v o lt a g e , n o n r e p e titiv e R e v e r s e v o lta g e