DIODE MARKING E8 Search Results

kje vishay

Abstract: BAV99 VISHAY SOT23 DIODE marking CODE Data KJE marking JE SO 6 KJE SOT-23 diode marking KJE BAV99 BAV99-GS08 Diode SOT-23 marking JE SOT23 JE
Contextual Info: BAV99 VISHAY Vishay Semiconductors Dual Switching Diode \ 3 Features • Fast switching speed • High conductance • Surface mount package ideally suited for automatic insertion 1 • Connected in series 2 17435 Marking: KJE, JE Packaging Codes/Options:

Contextual Info: BAV99 VISHAY Vishay Semiconductors Dual Switching Diode Features 3 • Fast switching speed • High conductance • Surface mount package ideally suited for automatic insertion • Connected in series 1 Mechanical Data 2 18109 Marking: JE Packaging Codes/Options:

Contextual Info: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability

general purpose diode marking code -08

Contextual Info: ERA15 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Marking Ultra small pakage, possible for 5mm pitch automatic insertion. High reliability Color code : White Applications 02 Voltage class

Contextual Info: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.

smd diode marking JC

Abstract: SMD MARKING CODE 103 SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD MARKING CODE 39 diode smd marking BUF SMD DIODE MARKING 14 smd diode marking ja
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性

Contextual Info: 5 7 . SGS-THOMSON MDS80 IM DIODE / THYRISTOR MODULE PRELIMINARY DATA FEATURES • Vdrm = V rrm UP TO 1200 V = 55A ■ HIGH SURGE CAPABILITY . INSULATED PACKAGE: INSULATING VOLTAGE 2500 V RMS (UL recognized: E81734) ■ It (AV) DESCRIPTION The MDS80 famly are constitued of one rectifier

sgs Thomson Thyristor

Abstract: MDS80
Contextual Info: MDS80 DIODE / THYRISTOR MODULE . . PRELIMINARY DATA FEATURES VDRM = VRRM UP TO 1200 V IT AV = 55 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) (UL recognized : E81734) A G I K DESCRIPTION The MDS80 family are constitued of one rectifier

Diode STTH

Abstract: 12363 TTP250
Contextual Info: STTH10002 Ultrafast recovery diode Datasheet  production data Features • Very low forward losses ■ Low recovery time ■ High surge current capability ■ Insulated package – Insulating voltage = 2500 V rms – Capacitance = 45 pF ■ Complies with UL standards File ref: E81734

090N03L

Abstract: 090N03
Contextual Info: Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters VDS 30 V RDS on ,max 9 mW ID 40 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level

090n03l

Abstract: IPD090N03LGE8177 E8177 IPD090N03L JESD22 PG-TO252-3-11
Contextual Info: Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 9 mΩ ID 40 A 1) • Qualified according to JEDEC for target applications

M1FE40

Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性

11n60c3

Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220

11n60c3

Abstract: SPA11N60C3 11N60C
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

11n60c3

Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

11n60c3

Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220

Contextual Info: STGIPL20K60 SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 20 A, 600 V short-circuit rugged IGBT Datasheet - production data • Isolation rating of 2500 Vrms/min • 5 kΩ NTC for temperature control • UL Recognized: UL1557 file E81734

Contextual Info: ESD0P8RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 KV (air / contact) • Very low line capacitance: 0.8 pF @ 1 GHz ( 0.4 pF per diode) • Ultra low series inductance: 0.4 nH per diode

marking 6d

Abstract: IPP147N12N
Contextual Info: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

marking 9D

Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

marking 6d

Abstract: IPD110N12N3 G
Contextual Info: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E

marking 6d

Abstract: IPP04CN10N G diode 6e
Contextual Info: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

BAR90-07LRH

Abstract: IEC61000-4-4 No103
Contextual Info: ESD0P8RFL RF ESD Protection Diodes • ESD protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Very low line capacitance: 0.8 pF @ 1 GHz