DIODE N55 Search Results

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

zener diode 1N PH 48

Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:

Contextual Info: _ \ G3E D I B K C INTERNATIONAL 117^03 T '0 f-C 7 □□□□□?□ b Type No. 1 N55A_ _ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617)681-9135

OPB861N

Abstract: OPB861N51 OPB861N55 transistor TIP 320
Contextual Info: E *Q SLOTTED OPTICAL SWITCH OPTOELECTRONICS O PB 861 N51/OPB 861 N55 PACKAGE DIMENSIONS DESCRIPTION Th e O PB 861N series of switches is designed to allow the SEE NOTE 3 user m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

C5257

Contextual Info: IKW30N100T TrenchStop series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel diode C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low VCE sat - very tight parameter distribution

Contextual Info: RECTIFIER, up to 1kV, 5A, 2 jis January 7, 1998 1N5550 1N5551 1N5552 1N5553 1N5554 3SM2 3SM4 3SM6 3SM8 3SM0 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA

SN76670

Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Contextual Info: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

1N5523 DO7

Abstract: 1n5525
Contextual Info: 1N5518 thru Mierosemi Corp. 1N5546 $ The diode experts SANTA ANA, CA SCOTTSDALE, AZ For m ore in fo rm a tio n call: 6 02 941-6300 FEATURES LOW VOLTAGE AVALANCHE D IO D E S DO-7 • LOW ZENER NOISE SPECIFIED • LOW ZEN ERIM PED AN C E • LOW LEAKAGE CURRENT

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

NP55N055SUG

Abstract: n55* "ON Semiconductor"
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR N55N055SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N055SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER

UBA2010

Abstract: UBA2010T UBA2010/N4 n556 N5560 T8-6foot-70W Philips instant on BALLAST CONTROL IC dimmable Fluorescent BALLAST
Contextual Info: }}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}} F I N A L TYPE COMMERCIAL D E V I C E S P E C I F I C A T I O N :UBA2010 T EXPERIMENTAL :N5560 1. General description The UBA2010 is a TL DIMMABLE HALF BRIDGE driver. The high voltage circuit is intended to drive and

light detector schmitt trigger

Abstract: ir sensor diode IR object DETECTOR
Contextual Info: My Links Home> Products > Detector > Optoschmitt Sensor > Product Page HOA6961-N55 Order Product and Get Support U.S. Authorized Distributors HOA Series IR Transmissive Optoschmitt Sensor, Transistor Output, No Mounting Tab, Plastic Package Global Sales & Service

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

22N55

Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

22N55

Contextual Info: HiPerFETTM Power MOSFET IXFH 22 N55 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr = 550 V = 22 A = 0.27 W £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 550 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

40n60 transistor

Abstract: MTE40N60 40n60 40N60 snubber 72SM MTE40N55 belleville washer T-39-15 diode n55 H3677
Contextual Info: n O T O K O L A SC -CXSTRS/R F > ~ b4 -T-'iy-lü D T | t . 3 b 7 2 S 4 DDtflllB Ö MOTOROLA SEMICONDUCTOR S É IS Â S lf TECHNICAL DATA Designer's Data Sheet M TE40N55 M TE40N60 If Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS

mte maxim

Abstract: GM 950 motorola 40n60 transistor
Contextual Info: nOTOKOLA SC -CXSTRS7R F> b4 D T | t,3 b 7 E S 4 □ D t.a n a - T - 'iy - iü a MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA MTE40N55 MTE40N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high

Clock Generator intel atom n450

Abstract: Clock Generator intel atom n470 Intel atom Dual N455 ATOM intel N570 SODIMM DDR3 Mechanical Dimensions BGA559 l atom n450 pin configuration STPC Clock Generator intel atom n455 nm10 n450
Contextual Info: Intel Atom Processor N400 & N500 Series Datasheet - Volume 1 This is volume 1 of 2. Refer to Document Ref# 322848 for Volume 2. June 2011 Revision 003 Document Number: 322847-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,

700DC-M220

Abstract: 700-M310 100-MCA02 700DC-M310 allen-bradley 100JE 100-FA22 100-FSC280 Allen-Bradley 100-FSD250 700-M400 100-FPTA30
Contextual Info: Control Relays Bulletin 700-M / CS 4, Bulletin 700-CF Bulletin 700-M / CS 4 • Up to 8 N/O or up to 4 N/C • Switching Capacity AC-1 12 A Bulletin 700-CF • • • • • Ordering Advice For Allen-Bradley branded products choose the Allen-Bradley Cat. No.

schematic diagram inverter lcd monitor dell

Abstract: hp laptop charging CIRCUIT diagram dell laptop battery pinout DELL laptop inverter board schematic hp laptop battery pinout testing motherboards using multi meter hp laptop ac adapter schematics diagram circuit diagram of smps dell "full hd" mobile phone camera pinout schematic diagram electrical BIKES USING DC MOTOR
Contextual Info: 2. MDmesh II for lighting 3. STV200N55F3 / STV250N55F3 High-current power MOSFETs 4. 2STCxxx / 2STAxxx High-end audio power bipolars 5. STP03D200 2 kV Darlington 6. 2200 V ESBTs 7. RF power design kits 8. USBULC6-2M6 Protection for USB 2.0 9. EMIF06-AUD01F2

I-6300

Abstract: DIODE MARKING GU
Contextual Info: 1N5518 thru 1N5546 M ierosemi Corp. The dioôe experts SA N T A A N A , CA SC O TTSD ALE, A Z F o r m o re in fo rm a tio n call: 602 9 4 I-6300 FEATURES LOW VOLTAGE AVALANCHE DIODES DO-35 • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT