DIODE SCHOTTKY 30V 1.5A Search Results

iss314

Abstract: log sheet air conditioning Schottky Diode 40V 5A dual Schottky Diode 40V 5A MLP832 ZXMNS3BM832
Contextual Info: ZXMNS3BM832 MPPS Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET- V BR DSS =30V; RSAT(on) =0.18 ; D = 2.7A Schottky Diode - VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual

XBS303V17

Abstract: "Schottky Barrier Diode"
Contextual Info: XBS303V17 ETR1614-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AV)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=30V

SBH1503S

Contextual Info: SBH1503S Ordering number : ENA0702 SANYO Semiconductors DATA SHEET SBH1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .

a0703

Abstract: SBM1503S
Contextual Info: SBM1503S Ordering number : ENA0703 SANYO Semiconductors DATA SHEET SBM1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBM1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .

Contextual Info: SBM1503S Ordering number : ENA0703 SANYO Semiconductors DATA SHEET SBM1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBM1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .

Contextual Info: SBH1503S Ordering number : ENA0702 SANYO Semiconductors DATA SHEET SBH1503S Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH1503 applied sets to be made smaller. Low forward voltage VF max=0.3V .

XBS303V17R-G

Abstract: XBS303V17R XBS30
Contextual Info: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

Contextual Info: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.

Contextual Info: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.

Schottky Barrier Diode

Abstract: XBS303V19R XBS303V19R-G
Contextual Info: XBS303V19R-G ETR16022-001 Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage

SBS818

Contextual Info: SBS818 Ordering number : ENA0471 SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Small switching noise.

Contextual Info: SBS818 Ordering number : ENA0471A SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise

SBH15-03

Contextual Info: Ordering number : ENN6968A SBH15-03 Schottky Barrier Diode SBH15-03 30V, 1.5A Rectifier Features • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A. unit : mm

Contextual Info: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.

Contextual Info: Ordering number : ENA0471A SBS818 Schottky Barrier Diode http://onsemi.com 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise

Contextual Info: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±

A04716

Abstract: A0471 emh8
Contextual Info: SBS818 Ordering number : ENA0471A SANYO Semiconductors DATA SHEET SBS818 Low VF Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • Low switching noise Low forward voltage (IF=2.0A, VF max=0.52V)

SBM30-03

Contextual Info: Ordering number : ENN6967A SBM30-03 Schottky Barrier Diode SBM30-03 30V, 3A Rectifier Features • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A. unit : mm

D1003

Abstract: SBM30-03
Contextual Info: SBM30-03 Ordering number : ENN6967B SBM30-03 Schottky Barrier Diode 30V, 3A Rectifier Features • • • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A.

CB803-03

Contextual Info: CB803-03 2.0A (30V / 2.0A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.8 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Cathode mark 02 Lot No. Applications 803-03

Contextual Info: FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

FDFS2P753Z

Contextual Info: FDFS2P753Z Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

Contextual Info: CB803-03 2.0A (30V / 2.0A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø3.0 ø0.8 5.0 25 MIN. 25 MIN. Marking Features Color code : Silver Low VF Abridged type name High reliability by planer design Voltage class Cathode mark 02 Lot No. Applications 803-03

FDFS2P753Z

Contextual Info: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low