DIODE SR 360 DATASHEET Search Results
DIODE SR 360 DATASHEET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CUZ12V |
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Zener Diode, 12 V, USC |
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DIODE SR 360 DATASHEET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Eye SafetyContextual Info: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws |
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22-Jan-15 Eye Safety | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-Sep-08 diode SR 360 IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet | |
Contextual Info: STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS STL60N10F7 100 V RDS on max PTOT ID 0.0165 Ω 12 A 5W 1 2 • Ultra low on-resistance |
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STL60N10F7 DocID024453 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
Contextual Info: STL60N10F7 N-channel 100 V, 0.0145 Ω typ., 12 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max ID PTOT STL60N10F7 100 V 0.018 Ω 12 A 5W 2 3 • Ultra low on-resistance |
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STL60N10F7 DocID024453 | |
FAN6206
Abstract: fan4801 1N4148 JESD22-A114 dual-Forward fan6210
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FAN6206 FAN6206 fan4801 1N4148 JESD22-A114 dual-Forward fan6210 | |
TSHA440
Abstract: TSHA4400 TSHA4401
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TSHA4400, TSHA4401 2002/95/EC 2002/96/EC TSHA440. 11-Mar-11 TSHA440 TSHA4400 TSHA4401 | |
TSHF5210Contextual Info: TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off |
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TSHF5210 2002/95/EC 2002/96/EC TSHF5210 11-Mar-11 | |
Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11 | |
TSHG6200Contextual Info: TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES DESCRIPTION • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 850 nm |
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TSHG6200 2002/95/EC 2002/96/EC TSHG6200 11-Mar-11 | |
Contextual Info: TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 830 nm High reliability |
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TSHG8200 2002/95/EC 2002/96/EC TSHG8200 11-Mar-11 | |
Contextual Info: TSHF6210 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 890 nm High reliability |
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TSHF6210 2002/95/EC 2002/96/EC TSHF6210 11-Mar-11 | |
FAN480X
Abstract: fairchild TL431 programmable 1.0.2 FAN6210MY FCP20N60 JESD22-A114 diode dual SR2. 8 pc817 dual
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FAN6210 FAN6210 FAN6206. FAN480X fairchild TL431 programmable 1.0.2 FAN6210MY FCP20N60 JESD22-A114 diode dual SR2. 8 pc817 dual | |
FSR630
Abstract: FSR660 pc817 fairchild FAN480X FCP20N60 FAN6210MY JESD22-A114 zd 5.6v uf1007 DIODE pc817 dual
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FAN6210 FAN6210 FSR660/630. FSR630 FSR660 pc817 fairchild FAN480X FCP20N60 FAN6210MY JESD22-A114 zd 5.6v uf1007 DIODE pc817 dual | |
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Contextual Info: TSHG6200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 850 nm • • • • High reliability |
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TSHG6200 2002/95/EC 2002/96/EC TSHG6200 11-Mar-11 | |
ICE2HS01G
Abstract: ice2hs01 LLC resonant transformer gate driver LLC resonant transformer RESONANT CONTROLLER 11-May-2010
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ICE2HS01G ICE2HS01G ice2hs01 LLC resonant transformer gate driver LLC resonant transformer RESONANT CONTROLLER 11-May-2010 | |
Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off |
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TSHF5210 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: TSFF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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TSFF5210 2002/95/EC 2002/96/EC TSFF5210 11-Mar-11 | |
Contextual Info: TSHF6210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 DESCRIPTION Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 |
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TSHF6210 2002/95/EC 2002/96/EC TSHF6210 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : 5 Peak wavelength: p = 830 nm • • • • High reliability |
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TSHG8200 2002/95/EC 2002/96/EC TSHG8200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSHG8200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : 5 Peak wavelength: p = 830 nm • • • • High reliability |
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TSHG8200 2002/95/EC 2002/96/EC TSHG8200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSHG6200 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 850 nm • • • • High reliability |
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TSHG6200 2002/95/EC 2002/96/EC TSHG6200 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: TSHF5210 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off |
Original |
TSHF5210 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 |